• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.25-31
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• 1990

We analyze the spherical-rectangular patch microstrip resonator with conformal surface by the cavity model and derive the formulas to calculate resonant frequency in the consideration of effective dielectric constant in order to minimize the errors of resonant frequency due to the fringing fields. A transmission type spherical-rectangular patch microstrip resonator operating at 3GHz, for example, is designed and fabricated on Epsilam-10 substate. Measuring data of resonant frequency and return loss are 2.985 GHz and -44.4dB respectively. Those well agreed with theoretical values.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.935-942
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• 2006

In this paper, a novel theory of realizing the series capacitor with broadside coupled suspended substrate stripline (BCSSS) is proposed. The proposed theory is relatively simple because the method of odd mode analysis is only applied: However, this theory supplies reliable result by considering the line effective width and end effect caused by the fringing field. The simulation results are presented to compare and analyze the characteristics of the ideal lumped capacitor and the coupled line capacitor. Also, the capacitive gap coupled line band-pass filter based on the proposed theory are designed and fabricated. The results prove successfully the validity of the proposed theory.

• Journal of Power Electronics
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• v.12 no.6
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• pp.960-973
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• 2012

The winding loss analysis of a flyback transformer is difficult and ambiguous because the primary side current and the secondary side current differs both in shape and phase, especially for DCM (Discontinuous Conduction Mode) operation. Meanwhile, the fringing field caused by the air gaps further makes the traditional 1-D loss analysis model not directly applicable. The paper gives a thorough investigation into the phase shift of winding currents, which indicates that the phase shift of the high order harmonics is still close to $180^{\circ}$ out-of-phase. Based on the analysis, a simplified 2-D winding loss analytical model for flyback transformers considering the effects of low order harmonics is proposed. By neglecting the y components of the fringing field, the proposed model has an acceptable accuracy and a simple form that is similar to the conventional 1-D model. The power loss calculated with the proposed analysis model is verified by FEA (Finite Element Analysis) simulations and experimental results.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.6
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• pp.264-269
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• 2005

The electrostatic comb drive actuator is one of the main building blocks in the field of micro electro-mechanical systems (MEMS). Most of the comb actuators presented previously have fingers that are rectangular in shape which produce a stable, constant force output during actuation. The use of sawtooth fixed fingers in a comb drive, which were presumed to produce an increasing force output with displacement due to the increased number of regions where fringing force, the driving force of comb actuators, appear. The dimensions of the sawtooth were derived from finite element analysis (FEA) of simplified finger models with sawtooth type fingers of various dimension and were compared to the rectangular finger model that showed that the sawtooth type fingers have $7\~9$ times stronger driving force. Finally, comb drive actuators with sawtooth type and rectangular fingers were fabricated and although the gap was bigger, the comb actuator with sawtooth type fingers showed about 1.7 times greater electrostatic force than the one with rectangular fingers at equal driving voltages. In conclusion, using the proposed sawtooth type comb fingers in a comb drive makes it possible to increase its displacement or reduce the driving voltage.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.246-249
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• 2002

In this paper, a rectangular patch antenna is miniaturized by changing tile middle of patch into narrow microstrip line except the edges of the patch where the fringing field occurs. Miniaturizing rate, gain, radiation patterns of suggested antennas were compared with general square microstrip antenna by using simulator Ensemble. As a result, it reduces the size of antenna by 30% and improves the characteristic of X pol as a advantage while it reduces gain and bandwidth.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.76-82
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• 2016

In this paper, we evaluated shielding effectiveness (SE) of carbon nanotube (CNT) film using near field scanning (NFS) in near field analysis. We adopted CNT film with deposit carbon density of 5% and thickness of 1mm for evaluation of shielding characteristic. Using a test coupon analogized to an actual IC package, we measured SE according to measuring position and SE according to distances between the CNT film and the test coupon. As a result, the measured SE in the near field varied with frequency. Especially, the measured electric field SE in the center of the test coupon is better than that of the measured edge point of the test coupon where it is affected by fringing effect. The results show that the measured SE in the near field is affected not only by frequency but also by measurement environment such as position and height of the probe and height of shielding film. In conclusion, we should choose proper methods for SE measurement considering interference distance in the electronic control system because there is little correlation between the proposed evaluation method in the near field and ASTM D 4935-10.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.401-404
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• 2004

The electron beam machining provides very high resolution up to nanometer scale, hence the E-beam writing technology is rapidly growing in MEMS and nano-engineering areas. In the optical column of the e-beam writer, there are several lenses condensing and focusing electron beams from electron gun with fringing magnetic fields. To achieve small spot size as 1-2 nm for higher power of electron beam, magnetic lenses should be designed considering their magnetic field distribution. In this paper, the magnetic field at two condenser lenses and object lens are calculated with finite element method and discussed its performances.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.783-788
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• 1996

In this paper, the high-$T_c$ , superconductor (HTS) microstrip patch antenna which is directly coupled to a microstrip transmission line is designed and the numerical solution which evaluate near electromagnetic field of HTS antenna is presented. This solution uses the interpolation function with the vector edge triangular element. The advantage of this element is the elimination of spurious solutions attributed to the lack of enforcement of the divergence condition. The results of this method have a good agreement with $TM_10$ mode in HTS microstrip patch antenna and show that the computation of resonant length considering the fringing capacitance effect at radiating edge are proper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.323-325
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• 1997

Conventionally it is asummed that the microstrip line conductor has a rectangular cross-section. but the additive and substactive processes used to create conductors for PCBs produce a conductor of approximately Trapezoidal cross-section. For wide Strip line, the thickness and edge effect will be small since most of capacitance is parallel plate rather than fringing and we can ignore the cross-section. For narrow strip lines, the edge effect become immportant. So in this paper, we measure the chracteristic impedance of microstripline by Vector Analyzer and simulate the electromagnetic field of microstripline using finite element method with edge angle.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.