• 제목/요약/키워드: Frequency-dependent electrical properties

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$ITO/Alq_3(60nm)/Al$의 유기 발광 소자에서 바이어스 전압과 주파수에 따른 전기적 특성 (Voltage and frequency dependent electrical properties in organic light-emitting diodes of $ITO/Alq_3/Al$)

  • 정동회;오현석;허성우;이원재;송민종;이준웅;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.464-468
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    • 2003
  • Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_3(60nm)/Al$ device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by resistance and capacitive component. We have also evaluated resistance, capacitance and permittivity.

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Frequency Dependent Magnetoelectric Responses in [0.948 Na0.5K0.5NbO3-0.052 LiSbO3]-[Co1-xZnxFe2O4] Particulate Composites

  • Choi, Moon Hyeok;Noh, Byung Il;Yun, Woosik;Jung, Chaewon;Yang, Su Chul
    • 한국전기전자재료학회논문지
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    • 제35권3호
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    • pp.303-307
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    • 2022
  • Magnetoelectric (ME) properties of 3-0 type particulate composites have been investigated with respect to application features for reliable magnetic sensitivity and magnetically-induced output voltage. In order to figure out the magnetoelectric characteristics in the ME composites, frequency dependent ME responses were studied from [0.948 Na0.5K0.5NbO3-0.052 LiSbO3]-[Co1-xZnxFe2O4] (NKNLS)/Co1-xZnxFe2O4 (CZFO, x=0, 0.1, and 0.2). As a result, the maximal αME of 23.15 mV/cm·Oe was achieved from the NKNLS-CZFO (xZn = 0.1) composites at resonance frequency of 315 kHz and Hdc = 0 Oe. From the frequency dependent ME responses, it is clearly described that the self-biased ME composites can be used for applications as both magnetic sensors and energy harvesters, respectively.

공중합체 LB막 MIM소자의 전기 및 유전 특성 (Electric & Dielectric Properties of MIM Device Using Copolymer LB Films)

  • 유승엽;정상범;박재철;권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.258-260
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    • 1996
  • We fabricated MIM device using copolymer LB films of $C_{18}MA-VE_2$. Electric and dielectric properties of MIM device were investigated. In our experimental results, the thickness of maleate copolymer LB film by elipsometry measurements was about $27{\sim}30[\AA]$. Conductivity was found to be $10^{+15}{\sim}10^{-14}[S/cm]$. The maleate copolymer LB film have the property of insulator like organic ultra-thin film. Frequency-dependent dielectric properties was orientational polarization by the dipole.

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PZT/Epixy 0-3형 조합적믈의 압전특성에 관한 연구 (Piezoelectric Properties of 0-3 Composite with PZT / Epoxy)

  • 김용혁;김호기;이덕철
    • 대한전기학회논문지
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    • 제36권7호
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    • pp.447-452
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    • 1987
  • In this paper, the dependence of piezoelectric properties in the 0-3 composite system of piezoelectric-ceramics polymer materials on particle size of ceramics were investigated. Radial mode and thickness mode of composite were observed similar to single phase of piezoelectric ceramics. The measured values of dielectric constant and dissipation factor were dependent on particle size, which increased with the increasing particle size. the planar coupling factor, thickness coupling factor and thickness frequency constant with the particle size were almost constant, while planar frequency constant increased. The thickness coupling factor decreased with the increasing thickness of specimen. It is found that maximum voltage coeffidient was calculated on the specimen with particle size smallar than 46 ${\mu}m$.

산화마그네슘 기판과 산화알루미늄 기판을 이용한 Meander 형태 인덕터의 고주파 시뮬레이션 (High Frequency Simulations for the Meander Type Inductors on the MgO and Al2O3 Substrates)

  • 함용수;김성훈;강이구;고중혁
    • 한국전기전자재료학회논문지
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    • 제22권8호
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    • pp.641-644
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    • 2009
  • We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.

Novel graphene-based optical MEMS accelerometer dependent on intensity modulation

  • Ahmadian, Mehdi;Jafari, Kian;Sharifi, Mohammad Javad
    • ETRI Journal
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    • 제40권6호
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    • pp.794-801
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    • 2018
  • This paper proposes a novel graphene-based optical microelectromechanical systems MEMS accelerometer that is dependent on the intensity modulation and optical properties of graphene. The designed sensing system includes a multilayer graphene finger, a laser diode (LD) light source, a photodiode, and integrated optical waveguides. The proposed accelerometer provides several advantages, such as negligible cross-axis sensitivity, appropriate linearity behavior in the operation range, a relatively broad measurement range, and a significantly wider bandwidth when compared with other important contributions in the literature. Furthermore, the functional characteristics of the proposed device are designed analytically, and are then confirmed using numerical methods. Based on the simulation results, the functional characteristics are as follows: a mechanical sensitivity of 1,019 nm/g, an optical sensitivity of 145.7 %/g, a resonance frequency of 15,553 Hz, a bandwidth of 7 kHz, and a measurement range of ${\pm}10g$. Owing to the obtained functional characteristics, the proposed device is suitable for several applications in which high sensitivity and wide bandwidth are required simultaneously.

IMI-O 초박막의 착체농도에 대한 유전 특성 (Dielectric Properties of Complex Cconcentration in IMI-0 Thin Films)

  • 정상범;유승엽;박재철;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.345-348
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    • 1999
  • The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

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SPECTROSCOPIC ADMITTIVITY IMAGING OF BIOLOGICAL TISSUES: CHALLENGES AND FUTURE DIRECTIONS

  • Zhang, Tingting;Bera, Tushar Kanti;Woo, Eung Je;Seo, Jin Keun
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • 제18권2호
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    • pp.77-105
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    • 2014
  • Medical imaging techniques have evolved to expand our ability to visualize new contrast information of electrical, optical, and mechanical properties of tissues in the human body using noninvasive measurement methods. In particular, electrical tissue property imaging techniques have received considerable attention for the last few decades since electrical properties of biological tissues and organs change with their physiological functions and pathological states. We can express the electrical tissue properties as the frequency-dependent admittivity, which can be measured in a macroscopic scale by assessing the relation between the time-harmonic electric field and current density. The main issue is to reconstruct spectroscopic admittivity images from 10 Hz to 1 MHz, for example, with reasonably high spatial and temporal resolutions. It requires a solution of a nonlinear inverse problem involving Maxwell's equations. To solve the inverse problem with practical significance, we need deep knowledge on its mathematical formulation of underlying physical phenomena, implementation of image reconstruction algorithms, and practical limitations associated with the measurement sensitivity, specificity, noise, and data acquisition time. This paper discusses a number of issues in electrical tissue property imaging modalities and their future directions.

화학적방법과 방사선으로 가교된 저밀도 폴리에티렌의 열적 기계적 및 유전적 특성의 비교연구 (A comparative study on thermal, mechanical and dielectric characteristics of low density polyethylene crosslinked by radiation and chemical methodes)

  • 김봉흡;강도열;김정수
    • 전기의세계
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    • 제25권2호
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    • pp.100-106
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    • 1976
  • A comparative study on thermal, static mechanical and dielectric characteristics were made over a temperature range of ca.20.deg.C to 320.deg.C and a frequency range of KHZ to MHZ band on low density polyethylene specimens crosslinked, respectively, by radiation and chemical method. The thermal property of both specimens shows that softening point appears to unchange by crosslinking, however, melting and liquidizing temperatures attain rapid increase at the imitiation of crosslinking. Mechanical properties show little difference to both specimens crosslinked by different method, further the behaviors were discussed in connection with the relaxation of molecular segments in amorphous phase. Dose dependent dielectric characteristics observed at ambient temperature under several fixed frequencies exhibit extremities at ca. 20 Mrad and the behaviors also were interpreted qualitatively by taking into consideration of dipole concentration change in amorphous phase together with the role of specimen geometry to the depth of oxidative layer. Observing frequency dependent dielectric characteristics, it was also proved that ionic conduction loss is appreciably greater in the specimen prepared by chemical method than that by radiation.

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임피던스 측정법을 이용한 엑시머 레이져 열처리 Poly-Si의 특성 분석 (APPLICATION OF IMPEDANCE SPECTROSCOPY TO POLYCRYSTALLINE SI PREPARED BY EXCIMER LASER ANNEALING)

  • 황진하;김성문;김은석;류승욱
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.200-200
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    • 2003
  • Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

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