• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1597_1598
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• 2009

In this paper, the techniques and design focus of flexible gain coltrol of LAN(Low Noise Amplifier) using the TSMC 0.18um CMOS process. The design frequency set up a standard on 2.4GHz that is used in Zigbee system. The design concepts a basic Cascode LNA techniques and a swiching circuit consisted of 4 NMOS of load resistance, which convert the output impedenceby tuning on or off. The result show the gain change by NMOS operated swich. The simulation result is that Gain is 10.23~12.96dB and NF(Noise Figure) is 1.41~1.47dB.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.499-504
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• 2017

A UHF CMOS variable gain low-noise amplifier (LNA) is designed for mobile digital TV tuners. The proposed LNA adopts a feedback topology to cover a wide frequency range from 474 to 868 MHz, and it supports the notch filter function for the interoperability with the GSM terminal. In order to handle harmonic distortion by strong interferers, the gain of the proposed LNA is step-controlled while keeping almost the same input impedance. The proposed LNA is implemented in a $0.11{\mu}m$ CMOS process and consumes 6 mA at a 1.5 V supply voltage. In the measurement, it shows the power gain of greater than 16 dB, NF of less than 1.7 dB, and IIP3 of greater than -1.7 dBm for the UHF band.

• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.85-91
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• 2017

This paper concerns the design of a matching module system enabling the RF signal to be harmonized between the new base stations (RRH) and the repeater in the same frequency band of the asynchronous transfer network. This matching system controls the RF Gain Control of the module while monitoring the quality of the quality. Additionally, the RF environment has been adapted accordingly to adjust the RF Gain Control to match the receiver characteristics of the relay. As a result of this study, we improved the quality of the interface between the new base stations and existing relays.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.150-153
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• 2000

In this paper, we have designed a 2 stage MMIC power amplifier which has flat gains of in-band and reasonable out-band cutoff characteristics using 0.5$\mu\textrm{m}$ MESFET libra교 of ETRI. For the 1st stave, we obtaind P$_{1dB}$ of 9.2 dBm and gain 10.8 dB using 6 finger D-MESFET and P$_{1dB}$ of 18.4 dBm and gain of 10.8 dB using 14 finger D-MESFET for the 2nd stage, which is power matched using LIBRA's embedded TUNER. Also in-band gain flatness and out-band cutoff characteristics are obtained by attaching LC tank in the output matching circuit. The designed 2 stage MMIC power amplifier has bandwidth of 0.95～2.8 GHz, gain of 20 dB and P$_{1dB}$of 17.2 dBm. Especially gain flatness of $\pm$0.8dB was obtained in 1.8～2.5 GHz frequency ranges. And chip size is 1.4$\times$1.4 mm..4 mm.

• Current Optics and Photonics
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• v.1 no.6
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• pp.579-586
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• 2017

In this paper, we theoretically demonstrate that semiconductor optical amplifiers (SOAs) with strong wavelength dependence of gain and phase are capable of all-optical inverted and non-inverted wavelength conversion (WC) over a wide range, with the assistance of an optical filter. First, the gain dynamics and phase dynamics in a common quantum well (QW) SOA with the $In_{0.53}Ga_{0.47}As/In_{0.7322}Ga_{0.2678}As_{0.5810}P_{0.4190}$ material system are found to be strongly dependent on wavelength, which is mainly related to the wavelength dependence of the differential gain and the differential refractive-index change. Second, the wavelength dependence in an all-optical wavelength converter based on the QW SOA cascaded with a detuning band pass filter is studied. Simulations show that the quality of the converted signal has little dependence on the operation wavelength. Both inverted and non-inverted WC can be achieved, over a large wavelength range. Therefore, although the gain and phase change are strongly wavelength-dependent, the effects of this dependence can be erased by appropriate optical filtering.

• Journal of electromagnetic engineering and science
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• v.16 no.2
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• pp.134-142
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• 2016

This paper proposes a technique for improving the conventional conical horn antenna for the X-band frequency using metamaterial on a wire medium structure. The main idea of this research is the application of the wire medium metamaterial to the conical horn's aperture for the enhancement of the horn's gain; this is done without changing the antenna's dimensions. The results show that the wire medium structure can increase the gain of a conventional conical horn antenna from approximately 17.7 dB to 20.9 dB (an increase of approximately 3.2 dB). A prototype antenna was fabricated, and its fundamental parameters including its reflection coefficient ($S_{11}$), radiation patterns, and directive gain were measured. The simulated and measured results were very good. The wire medium structure of the proposed antenna improved the radiation pattern, enhanced the directivity, increased the gain, and reduced the side lobe level using a simple integrated wire medium structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.4
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• pp.822-828
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• 2001

In this paper, a high gain microstrip antenna with rectangular cavity backed is designed. A single microstrip patch is basically a low gain radiator As a ga in enhancement method, superstrate loading techniques are applied to the $2\times2$ microstrip array antenna with cavity backed. In antenna design, although the broadside gain increases as the cavity is enlarged, a cavity size of $3\times3$ wavelength is sufficient. The distance between the radiating elements is chosen as 1.5 free-space wavelength. The antenna radiation characteristics are calculated by IE3D software and compared with the experimental results. Experimental results show that the maximum gain is 18.6dBi at the frequency of 9.16GHz, which is good agreement with the calculations.

• Journal of the Korea Computer Industry Society
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• v.2 no.7
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• pp.895-904
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• 2001

In this study, gain can be high because an active double balance mixer was used. Receiving system II was made with receiving system I of low IIP3, a passive double balance mixer which has low gain and high IIP3, and an intermediate frequency amplifier for enhancing the low gain. The result of simulating receiving parameter is as follows： the total NF of receiving system I was 6.4382dB, gain was 53.5dB, and IIP3 was -6.6352dB m. As for the receiving system II, the total NF was 9.70672dB, gain was 47dB, and IIP3 was 3.66729dB m.

• Journal of Broadcast Engineering
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• v.23 no.6
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• pp.925-930
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• 2018

In this paper, we present a low profile dual-microstripline-fed double 4-arrayed meander monopole antenna with a cross-type element back by separated four-segments mesh-type reflector. The cross-type element and separated four-segments mesh-type reflector leads to enhance radiation patterns and antenna gain characteristics. The measurement value of the proposed antenna show that it has dipole-like radiation pattern characteristics. The experimental peak gain of fabricated antenna is about 2.89 dBi, which presents relatively high gain characteristics for a low profile(small-size) one. This antenna can be applied mobile RFID(radio frequency identification) readers, small medical instruments, broadcasting and home-networking operations, and other low profile high-gain systems.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.