• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.5-8
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• 1998

A high power diode-array-pumped slab Nd:YAG laser is described. The resonator consists of three mirrors in folded geometry. The laser is operated in acousto-optic Q-switching mode and intracavity frequency doubling is tried. We demonstrate that the laser exhibits frequency doubling efficiency of ∼60% with a type I LBO crystal.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.491-493
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• 2013

This paper proposes a frequency-doubling optoelectronic oscillator employing a novel three-arm dual-output Mach-Zehnder modulator (MZM). One output of the MZM generates the fundamental-frequency signal which is recycled by the microwave optical fiber link for oscillation, and the other output can generate the frequency-doubled signal. Experiment was conducted using a commercial two-arm MZM, a phase modulator, and an optical fiber link of 89 meters in length. A 19-GHz frequency-doubled signal was successively obtained with fundamental signal suppression more than 36 dB.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.143-149
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• 2001

We performed the intracavity frequency-doubling of a tunable continuous-wave Ti:sapphire laser using a lithium triborate $(LiB_3O_5, LBO)$ crystal. For an efficient intracavity frequency-doubling, we measured the spectral and the angular bandwidth about the $\theta$-direction of LBO crystal. The measured values at a fundamental wavelength of 800 nm were 1.54 nm.cm and 3.8 mrad.cm, respectively. As a result of an intracavity frequency-doubling, we obtained the second-harmonic generation output power of 5.3 mW at 400 nm with the full width at half maximum(FWHM) of 0.089 nm from the fundamental output power of 185 mW at 800 nm. The frequency-doubled output was tuned from 397 nm to 403 nm.403 nm.

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.231-232
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• 2008

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.294-298
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• 2000

The output characteristics of intracavity frequency doubling of laser-diode end-pumped Nd:S-VAP laser were investigated. Nd:S-VAP is suitable for a microchip laser medium, which has a low threshold property because of a very high value of the stimulated emission cross-section and lifetime product. The threshold energy measured was 81 J.ll. The second harmonic output energy measured was $126\mu\textrm{J}$at a pump energy of $2\mu\textrm{J}$. We described for intracavity frequency doubling by using theoretical calculations. Q-switched second harmonic energy measured was $15\mu\textrm{J}$per pulse with a pulse-width of 26 ns. at a pump energy of 2 mJ and an $M^2$ of 1.47 represented a good beam quality. ality.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.73-78
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• 1990

1.3${\mu}{\textrm}{m}$ DFB with absorption grating of 1.55${\mu}{\textrm}{m}$ InGaAsP layer was fabricated. This new type of DFB laser shows self-plusation for DC operation. At low level of injection the relation between the pulsation frequency and the injection current shows similar behavior with the relaxation oscillation of ordinary laser and at high level of injection the pulsation frequency decreases compared to the relaxation oscillation. Period doubling, period 3 and 4 were observed for AC modulation. In case of period doubling the waveform shows only one pulse within a period without any accompanying subsidiary pulses and the oscillation frequency was quite stable. The pulse widths as short as 58.5 ps was achieved with AC modulation. We propose the time division multiplexing application of this kind of DFB laser.

• The Optical Journal
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• v.14 no.4 s.80
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• pp.71-73
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• 2002

• Wind and Structures
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• v.7 no.4
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• pp.265-280
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• 2004

This paper presents some fundamental results on the dynamics of the periodic Karman wake behind a circular cylinder. The wake is treated like a dynamical system. External forcing is then introduced and its effect investigated. The main result obtained is the following. Perturbation of the wake, by controlled cylinder oscillations in the flow direction at a frequency equal to the Karman vortex shedding frequency, leads to instability of the Karman vortex structure. The resulting wake structure oscillates at half the original Karman vortex shedding frequency. For higher frequency excitation the primary pattern involves symmetry breaking of the initially shed symmetric vortex pairs. The Karman shedding phenomenon can be modeled by a nonlinear oscillator. The symmetrical flow perturbations resulting from the periodic cylinder excitation can also be similarly represented by a nonlinear oscillator. The oscillators represent two flow modes. By considering these two nonlinear oscillators, one having inline shedding symmetry and the other having the Karman wake spatio-temporal symmetry, the possible symmetries of subsequent flow perturbations resulting from the modal interaction are determined. A theoretical analysis based on symmetry (group) theory is presented. The analysis confirms the occurrence of a period-doubling instability, which is responsible for the frequency halving phenomenon observed in the experiments. Finally it is remarked that the present findings have important implications for vortex shedding control. Perturbations in the inflow direction introduce 'control' of the Karman wake by inducing a bifurcation which forces the transfer of energy to a lower frequency which is far from the original Karman frequency.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.94-95
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• 2002