• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.94-97
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• 2013

Orthogonal fluxgate sensor was fabricated with cylinder-shaped NiZn ferrite core, Cu wire through the core and pickup coil wound on the core, and the bias current effect on the output sensitivity of it was investigated. The output ($$\sim_\sim$$ sensitivity) of the sensor was largely dependent on the operation frequency, and the tendency of sensor output was similar to that of the impedance of pickup coil. The maximum output was obtained by adding the DC bias current of which value was over 50% of the excitation current. The output was saturated when the DC bias current was larger than 50% of the excitation current.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.94-99
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• 1997

There are several factors that have influence on the phase noise of an oscillator. But one of the major factors is the flicker noise of a transistor, since the phase noise of an oscillator is generated by mixing the carrier with the low frequency noise near the DC having the characteristic of 1/f. In this paper, we have presented a method on reducing the phase noise of an oscillator by using a low-frequency feedback circuit based on an active bias circuit, and have fabricated a DRO for a DBS receiver. Measurement results show that the phase noise is -92 dBc/Hz at the 10 KHz offset frequency, and from these results we have found out that the reduction method is very effective.

• Journal of Magnetics
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• v.16 no.2
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• Proceedings of the KSMRM Conference
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• 2002.11a
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• pp.98-98
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• 2002

목적： RF Coil sensitivity 또는 MRI system의 여러 요인들로 인해서 생길 수 있는 영상의 Bias field 즉, 유난히 밝거나 어두운 부분을 raw data 의 low frequency 값들을 임의로 변화를 줌으로써 어느 정도 보정이 가능하다. 대상 및 방법： Bias field로 인해서 분석에 어려움이 있는 이미지의 k-space 데이터를 가지고 있으면 부위에 상관없이 모두 가능하다. k-space에서 얻어진 raw data를 Kx와 Ky의 2-D로 표현한 후에 DC 성분에 해당하는 영점을 그대로 놔둔 상태에서 영점 주변으로 일정 범위 안에 있는 low frequency 성분 값들을 FT(Fourier Transform)를 거치기 전에 0으로 바꾼 후에 image processing을 거치도록 한다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.18-24
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• 1977

In this paper, a series inverter circuit is constructed by using the pinch-off characteristics of FET, and itsoutput characteristics is analysed for the variation of gate bias frequency and load. The above constructed circuit could eliminate the unstable output characteristics of SCR-series inverter fir chit by the changes of gate bias frequency and load resistor. But the current capacity of the FET-series inverter circuit is relatively small, and is recommended to be used for light loads.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.136-142
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• 1992

The effects of cyclic stress, frequency and bias-pressure on densification of Al2O3 powder cyclic compaction are investigated. The effect of frequency was not significant on densification of Al2O3 powder under cyclic compaction. The higher the cyclic stress and the lower the bias pressure, the higher densification was achieved. To obtain a higher densification, cyclic compaction was more efficient than 1 stroke compaction. A densification equation was proposed to describe an cyclic time dependent pressure-volume relation for Al2O3 powder under cyclic compaction. This equation was obtained empirically, based on the pressure-volume equation proposed by Cooper and Eaton, the time dependent densification equation by Kim and Suh and experimental data for Al2O3 powder under cyclic compaction. The agreement between the proposed equation and experimental data for Al2O3 powder under cyclic compaction was very good.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.9
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• pp.1400-1409
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• 2001

This paper describes a fiber optic sensor suitable for non-contact detection of ultrasonic waves. This sensor is based on a fiber optic Sagnac interferometer. Quadrature phase bias between two interfering laser beams in Sagnac loop is introduced by a polarization controller. A stable quadrature phase bias can be confirmed by observing the interferometer output versus phase bias. This method eliminates a digital signal processing for detection of ultrasonic waves using Sagnac interferometer. Interference intensity is affected by the frequency of ultrasonic waves and the time delay of Sagnac loop. Collimator is attached to the end of the probing fiber to focus the light beam onto the specimen surface and to collect the reflected light back into the fiber probe. Ultrasonic waves produced by conventional ultrasonic transducers are detected. This fiber optic sensor based on Sagnac interferometer is very effective for detection of small displacement with high frequency such as ultrasonic waves used in conventional non-destructive testing.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1041-1044
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• 2003

In this paper, a new CMOS fully integrated frequency-to-digital converter is proposed. The operation of the proposed circuit is based on a pulse-shrinking delay element. In the proposed circuit, a resolution of the converted digital output can be easily improved by increasing the number of the pulse-shrinking element. Also the input frequency range can be easily changed through controlling bias voltage in the pulse-shrinking element. The simulation of the designed circuit carried out by HSPICE using the CMOS 0.35${\mu}{\textrm}{m}$ process technology.