• 한국표면공학회지
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• 제51권6호
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• pp.360-364
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• 2018

A facile method to fabricate freestanding CuO nanoleaves and CuO nanowires-based films was demonstrated. $Cu(OH)_2$ nanoleaves and nanowires were prepared by a hydrolysis reaction in aqueous solution including pyridine and NaOH with the tailored concentrations at room temperature. The films of freestanding CuO nanoleaves and CuO nanowires can be successfully obtained via the simple vacuum infiltration following a thermal dehydration reaction. The morphologies and crystallinity of the $Cu(OH)_2$ nanoleaves/nanowires and CuO nanoleaves/nanowires were characterized by XRD, SEM, TEM and FT-IR. The films fabricated with freestanding CuO nanoleaves and nanowires in this study may be applicable for building high-efficiency organic binder-free devices, such as gas sensors, batteries, photoelectrodes for water splitting and so on.

• 청정기술
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• 제22권3호
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• pp.203-207
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• 2016

Here, we report a novel fabrication technique for patchable organic lasing sheet based on non-volatile liquid organic semiconductors and freestanding polymeric film with high flexibility and patchability. For this work, we have fabricated the second-order DFB grating structure, which leads to surface emission, embedded in the freestanding polymeric film. Using an ultra-violet (UV) curable polyurethaneacrylate (PUA) mixture, the periodic DFB grating structure can be easily prepared on the freestanding polymeric film via a simple UV curing process. Due to unsaturated acrylate remained in the PUA mixture after UV curing, the freestanding PUA film provides adhesive properties, which enable mounting of the patchable organic lasing sheet onto non-flat surfaces with conformal contact. To achieve laser actions in the freestanding resonator structure, a composite material of liquid 9-(2-ethylhexyl)carbazole (EHCz) and organic laser dyes was used as the laser medium. Since the degraded active materials can be easily refreshed by a simple injection of the liquid composite, such a non-volatile liquid organic semiconducting medium has degradation-free and recyclable characteristics in addition to other strong advantages including tunable optoelectronic responses, solvent-free processing, and ultimate mechanical flexibility and uniformity. Lasing properties of the patchable organic lasing sheet were also investigated after mounting onto non-flat surfaces, showing a mechanical tunability of laser emission under variable surface curvature. It is anticipated that these results will be applied to the development of various patchable optoelectronic applications for light-emitting displays, sensors and data communications.

• ETRI Journal
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• 제31권4호
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• pp.351-356
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• 2009

We present a simple semiconductor process to fabricate nanogap arrays for application in molecular electronics and nano-bio electronics using a combination of freestanding silicon nanowires and angle evaporation. The gap distance is modulated using the height of the silicon dioxide, the width of the Si nanowires, and the evaporation angle. In addition, we fabricate and apply the nanogap arrays in single-electron transistors using DNA-linked Au nanoparticles for the detection of DNA hybridization.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.49-55
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• 2008

Strip bending test has been frequently utilized to measure the mechanical properties of freestanding thin films in substitute for the micro-tensile test. However, in spite of its simplicity and reliability, strip bending test has a few problems, for example, the measurement of strain and the calculation of stress at zero strain. In this study, these problems are precisely reviewed and proved. Upon this review, strip bending tester has been developed, which uses the confocal laser displacement meter to measure the deformed configuration of the specimen and the possibility and limitation of this testing system is carefully investigated including the estimation of uncertainty of the measurement of strain. Finally, to prevent errors and to improve the accuracy of this testing system, the shape of the specimen has been carefully studied and is proposed.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.784-789
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• 1998

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

• 한국재료학회지
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• 제8권7호
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• pp.591-595
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• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.

• Structural Engineering and Mechanics
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• 제57권5호
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• pp.951-968
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• 2016

Long-span cross-strait bridges extending into deep-sea waters are exposed to complex marine environments. During the construction stage, the flexible freestanding bridge towers are more vulnerable to environmental loads imposed by wind and wave loads. This paper presents an experimental investigation on the dynamic responses of a 389-m-high freestanding bridge tower model in a test facility with a wind tunnel and a wave flume. An elastic bridge model with a geometric scale of 1:150 was designed based on Froude similarity and was tested under wind-only, wave-only and wind-wave combined conditions. The dynamic responses obtained from the tests indicate that large deformation under resonant sea states could be a structural challenge. The dominant role of the wind loads and the wave loads change according to the sea states. The joint wind and wave loads have complex effects on the dynamic responses of the structure, depending on the approaching direction angle and the fluid-induced vibration mechanisms of the waves and wind.

• Carbon letters
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• 제28권
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• pp.105-110
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• 2018

Owing to their scalability, flexible operation, and long cycle life, vanadium redox flow batteries (VRFBs) have gained immense attention over the past few years. However, the VRFBs suffer from significant polarization, which decreases their cell efficiency. The activation polarization occurring during vanadium redox reactions greatly affects the overall performance of VRFBs. Therefore, it is imperative to develop electrodes with numerous catalytic sites and a long cycle life. In this study, we synthesized heteroatom-rich carbon-based freestanding papers (H-CFPs) by a facile dispersion and filtration process. The H-CFPs exhibited high specific surface area (${\sim}820m^2g^{-1}$) along with a number of redox-active heteroatoms (such as oxygen and nitrogen) and showed high catalytic activity for vanadium redox reactions. The H-CFP electrodes showed excellent electrochemical performance. They showed low anodic and cathodic peak potential separation (${\Delta}E_p$) values of ~120 mV (positive electrolyte) and ~124 mV (negative electrolyte) in cyclic voltammetry conducted at a scan rate of $5mV\;s^{-1}$. Hence, the H-CFP-based VRFBs showed significantly reduced polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Structural Engineering and Mechanics
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• 제78권3호
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• pp.333-350
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• 2021

Motivated by the demand of seismic protection of museum collections and development of performance-based seismic design guidelines, this paper investigates the seismic fragility of sliding artifacts based on incremental dynamic analysis and three-dimensional finite element model of the artifact-showcase-museum system considering nonlinear behavior of the structure and contact interfaces. Different intensity measures (IMs) for seismic fragility assessment of sliding artifacts are compared. The fragility curves of the sliding artifacts in both freestanding and restrained showcases placed on different floors of a four-story reinforced concrete frame structure are developed. The seismic sliding fragility of the artifacts within a real-world museum subjected to bi-directional horizontal ground motions is also assessed using the proposed IM and engineering demand parameter. Results show that the peak floor acceleration including only values initiating sliding is an efficient IM. Moreover, the sliding fragility estimate for the artifact in the restrained showcase increases as the floor level goes higher, while it may not be true in the freestanding showcase. Furthermore, the artifact is more prone to sliding failure in the restrained showcase than the freestanding showcase. In addition, the artifact has slightly worse sliding performance subjected to bi-directional motions than major-component motions.