• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1141-1147
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• 2012

Electromagnetic analysis to design unclonable PUFs with frequency-dependant materials with Debye dispersion was considered. To simulate FDTD calculations consider that 1-D problem of pulsed plane wave traveling in free space normally incident on air-silicon material interface on dielectric substrate. The pulse traveling wave at a vacuum-medium interface was reflected, and transmitted wave was dissipated. As a result, 1-D PUF modeling with Debye dispersion on dielectric substrate structure can be applied and FDTD calculation for PUF modeling is a good approximation.

• Advances in aircraft and spacecraft science
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• v.7 no.1
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• pp.41-52
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• 2020

The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.296-296
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• 2006

Highly temperature stable mesoporous materials have excellent properties and potential applications. Here we show a novel poly(vinyl)silazane-block-polystyrene diblock copolymer, which was synthesized by controlled/living free radical polymerization with reversible addition fragmentation chain transfer (RAFT) route. The obtained diblock copolymer occurs the phaseseparation on the nanoscale to form ordered nanostructure, which is converted to mesoprorous ceramic after heating at 800oC. This route demonstrates the preparation of highly temperature stable mesoporous silicon carbon nitrides (SiCN) ceramic film directed from highly cross-linking poly(vinyl)silazane blocks with high ceramic yield, which is different from previous pathway.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.61-65
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• 2015

The effect of Sr addition on the flexural strength of bulk SiOC ceramics was investigated in polymer-derived SiOC ceramics prepared by conventional hot pressing. Crack-free, dense SiOC discs with a 30 mm diameter were successfully fabricated from commercially available polysiloxane with 1 mol% strontium isopropoxide derived Sr as an additive. Agglomerates formed after the pyrolysis of polysiloxane led to the formation of domain-like structures. The flexural strength of bulk SiOC was strongly dependent on the domain size formed and Sr addition. Both the minimization of the agglomerate size in the starting powders by milling after pyrolysis and the addition of Sr, which reinforces the SiOC structure, are efficient ways to improve the flexural strength of bulk SiOC ceramics. The typical flexural strength of bulk Sr-doped SiOC ceramics fabricated from submicron-sized SiOC powders was ~209 MPa.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.359-359
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• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.4
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• pp.629-636
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• 1987

An experiment is carried out to study the surface-tension driven flow characteristics in a cylindrical liquid column heated from above (which is the low gravity floating zone simulated on earth) with varing the aspect ratio and diameter of the liquid column. Hexadecane, octadecane, silicon oil(10cs), FC-40 and water are used as the test liquids. The free surface shape varies sinusoidally for Ma>M $a_{cr}$ and its frequency is found to be the same as that of temperature oscillation. It is verified that the surface temperature profile changes from linear to S-shaped profile for Ma>M $a_{cr}$ . The frequency of temperature oscillation decreases with increasing liquid volume, while its level increases. M $a_{cr}$ decreases with increasing aspect ratio, and also decreases with increasing Prandtl number in the range of 25

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.503-506
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• 2003

The most profound technologies are those that disappear. Silicon-based information technology, in contrast, is far from having become part of the environment. The idea of integrating computers seamlessly into the world at large runs counter to a number of present-day trends. Ubiquitous computing is not just aiming nomad multimedia. Rather, this computing environment lets us free to use computers without thinking and so to focus beyond them on new goals. In that context, Mom is such a fundamental membrane through which humans can interact with the environment. An embodied interaction paradigm, based on Mom, is investigated. Mom, space. sensing/perception, ubiquitous computing, and interactive technology are some of the key ideas to explore.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1998.10a
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• pp.192-197
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• 1998

Abrasive flow machining is useful to abrasive polish a internal or external surface of the free shape dimensional parts, which are used in many fields such as machine tool parts, semi-conductor, and medical component industries. The machining process is that two hydraulic cylinders, which are located surface to surface, are enforce media to the passage between workpiece and tooling part alternately, and then the abrasives included in the media pass the passage and polish the surface of workpiece. The media which is made of polymer and abrasive plays complex have workpiece by its viscoelastic characteristics. In this study, the media for AMF was made by mixing viscoelastic polymer with alumina and silicon carbide abrasive respectively. As a result, alumina include media is also the experiments of deburring the inside burr of in order to analyse the deburring machinability of abrasive flow machining according to various machining parameters which were media flow rate extrusion pressure, passage gap, media viscosity, abrasive content, and abrasive grain size.

• Journal of Magnetics
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• v.6 no.1
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• pp.1-4
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• 2001

We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.