• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.8
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• pp.798-804
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• 2013

In this paper, conducted emission from the LDC(Low-Side DC/DC Converter) of a HEV/EV was analyzed using high-frequency circuit modeling in system-level approach. The conducted emission by PWM process(100 kHz; Switching Frequency) can cause RFI(Radio-Frequency Interference) problems in the AM/FM frequency range. In order to mitigate this conducted emission, a high-frequency equivalent circuit model is proposed by analyzing the fundamental circuits, parasitic components in their parts and connections and non-linear characteristics of MOSFETs, high-power capacitors, inverters, motors, high-power cables, and bus bars which are composed of the LDC. Using these circuit models, results of both simulation and measurement were compared and similarities between them were verified. We are looking forward that this approach can be effectively used in the EMC design of HEV/EV.

• The Korean Journal of Physiology and Pharmacology
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• v.4 no.3
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• pp.197-210
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• 2000

Suppressive role of $Na^+-Ca^{2+}$ exchange in myocardial tension generation was examined in the negative frequency-force relationship (FFR) of electric field stimulated left atria (LA) from postnatal developing rat heart and in the whole-cell clamped adult rat ventricular myocytes with high concentration of intracellular $Ca^{2+}$ buffer (14 mM EGTA). LA twitch amplitudes, which were suppressed by cyclopiazonic acid in a postnatal age-dependent manner, elicited frequency-dependent and postnatal age-dependent enhancements after $Na^+-reduced,\;Ca^{2+}-depleted$ (26 Na-0 Ca) buffer application. These enhancements were blocked by caffeine pretreatment with postnatal age-dependent intensities. In the isolated rat ventricular myocytes, stimulation with the voltage protocol roughly mimicked action potential generated a large inward current which was partially blocked by nifedipine or $Na^+$ current inhibition. 0 Ca application suppressed the inward current by $39{\pm}4%$ while the current was further suppressed after 0 Na-0 Ca application by $53{\pm}3%.$ Caffeine increased this inward current by $44{\pm}3%$ in spite of 14 mM EGTA. Finally, the $Na^+$ current-dependent fraction of the inward current was increased in a stimulation frequency-dependent manner. From these results, it is concluded that the $Ca^{2+}$ exit-mode (forward-mode) $Na^+-Ca^{2+}$ exchange suppresses the LA tension by extruding $Ca^{2+}$ out of the cell right after its release from sarcoplasmic reticulum (SR) in a frequency-dependent manner during contraction, resulting in the negative frequency-force relationship in the rat LA.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.4
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• pp.332-338
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• 2002

High current coil power supply for superconductivity coil of tokamak requires fast dynamics performance of di/dt and smooth change over of current direction. To meet the specification high performance DSP-based controller Is designed for 12-pulse thyristor dual converter with interphase transformer(IPT). Not only the total current of Y and $\Delta$ converter units but also the difference for those should be regulated fast and accurately. Proportional and integral controller is designed for current difference control and the controller output is compensated to $\Delta$ converter. The source voltage phase angle detection and gate pulse generation algorithm are implemented in software for higher reliability of current control. The current error Is reduced by selection of appropriate initial gating angle during the transient of change over of current direction between thyristor converters.

• Nuclear Engineering and Technology
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• v.52 no.3
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• pp.575-580
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• 2020

We have developed a position-sensitive Parallel Plate Avalanche Counter (PPAC) to detect the fission fragments and reconstruct the fission reaction plane in the experiment of studying nuclear equation of state (nEOS) by means of heavy ion collision (HIC). This experiment put forward high requirements for the performances of PPAC, such as the time resolution, efficiency and position resolution. According to these requirements we designed the PPAC with an active area of 240 mm × 280 mm working at low gas pressure. The results show that time resolution could be less than 300 ps. Position resolution is consistent with the theoretical calculation about 1.35 mm. Detection efficiency could be approaching 100% gradually with the voltage increasing in different gas pressures. The performances of PPAC have also been verified in beam experiment. Each set of anode wires can be accurately separated in the position spectrum. In the beam experiment, we also got the back-to-back correlation of fission fragments which is one of the direct signals characterizing binary decay.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.12-17
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• 2011

In this paper, we report on the improved electrical and optical characteristics for decreasing current crowding effect and uniform current distribution by designing octagonal finger type electrode pattern in large-scale lateral GaN (Gallium Nitride) LED (Light-emitting diode) with numerical 3-D simulator. Compared with the conventional electrode pattern, proposed electrode pattern was investigated to confirm the improvement of characteristics. From the simulation results of 3-D SpeCLED/RATRO simulator, we found that the forward voltage was decreased by 0.34 V and the light output power was improved by 7.72 mW at the same injection current condition in the LED with proposed octagonal finger type electrode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.131-135
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• 2005

The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.