• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.408-408
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• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• 한국진공학회지
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• 제11권3호
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• pp.171-175
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• 2002

Indium-Tin-Oxide(ITO)에 대해 산소 플라즈마 처리를 한 후 일함수에 대한 변화를 $\gamma$-집속 이온빔을 사용하여 조사하였다. ITO의 표면이 산소 플라즈마 처리를 보다 많이 경험할수록 표면저항이나 일함수는 높아졌다. Auger 전자 분광법을 이용해 표면의 화학적 분석을 해본 결과 산소는 증가한 반면 주석은 감소하였다. 표면 일함수와 표면 저항의 증가는 ITO 표면에서의 산소와 주석의 변화와 관계가 있는 것으로 여겨진다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.203-203
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• 2012

The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

• 대한인간공학회지
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• 제7권2호
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• pp.23-30
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• 1988

The methods suggested up to now for 3-dimensional anthroponetry require much efforts and costs in measuring and analysing. To solve these problems, we adopt the methods such as Moire Interferometry, Image processing and Computer Vision Technique which are efficient in processing anthropomorphic data. Moire contourgraph was constructed by using Ar-ion laser as a light source (2 Watt power and 5145 A wavelength) and laser beam expander(20X). Image data can be 3-dimensionally reconstructed as the surface patch and geographical relation between faces expressed by mash-point and edges as units. This research is focused on the followings; 1) Development of an economical and reliable measuring method. 2) Design of reproduction methods of 3-dimensional human body data. Therefore, our research makes it possible to study further advanced quantitative analysis of human body.

• 한국결정성장학회지
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• 제16권1호
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• Applied Microscopy
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• 제46권4호
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• pp.171-175
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• 2016

A distinctive neuronal network in the brain is believed to make us unique individuals. Electron microscopy is a valuable tool for examining ultrastructural characteristics of neurons, synapses, and subcellular organelles. A recent technological breakthrough in volume electron microscopy allows large-scale circuit reconstruction of the nervous system with unprecedented detail. Serial-section electron microscopy-previously the domain of specialists-became automated with the advent of innovative systems such as the focused ion beam and serial block-face scanning electron microscopes and the automated tape-collecting ultramicrotome. Further advances in microscopic design and instrumentation are also available, which allow the reconstruction of unprecedentedly large volumes of brain tissue at high speed. The recent introduction of correlative light and electron microscopy will help to identify specific neural circuits associated with behavioral characteristics and revolutionize our understanding of how the brain works.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2001년도 제32차 추계학술대회
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• pp.18-22
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• 2001

A technique to characterize specific site of materials using a combination of a dedicated focused ion beam system(FIB), and Intermediate-voltage scanning transmission electron microscope(STEM) or transmission electron microscope(TEM) equipped with a scanning electron microscope(SEM) unit has been developed. The FIB system is used for preparation of electron transparent thin samples, while STEM or TEM is used for localization of a specific site to be milled in the FIB system. An FIB-STEM(TEM) compatible sample holder has been developed to facilitate thin sample preparation with high positional accuracy Positional accuracy of $0.1{\mu}m$ or better can be achieved by the technique. In addition, an FIB micro-sampling technique has been developed to extract a small sample directly from a bulk sample in a FIB system These newly developed techniques were applied for the analysis of specific failure in Si devices and also for characterization of a specific precipitate In a metal sample.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.