• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.82.1-82.1
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• 2017

After a coronal mass ejection occur, plasma blobs are often observed along the post-CME ray. Searching for features related to the plasma blobs would be important in understanding their origin. We investigated the morphology of solar flares at EUV wavelengths, around the estimated times when blobs were formed. We focused on three events - 2013 September 21 and 22, 2015 March 7 and 8, and 2017 July 13 and 14 - observed by Atmospheric Imaging Assembly (AIA) aboard Solar Dynamic Observatory (SDO). Around the blob ejection times on 2013 September 21 and 22 and 2017 July 13 and14, we found regions with recurrent events of pronounced flux increase in EUV images. Around those of 2015 March 7 and 8, however, we could not observe such recurrent flux increase. This illustrates that even though blob ejections along different post-CME rays look similar in the high corona, the assocated features in the low corona may differ. We conclude that magnetic morphology and CME triggering process should be carefully examined in order to classify plasma blobs by their nature.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.171-175
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• 2002

The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.99-102
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• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2150-2152
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• 2000

In this report, a technical trend of manufacture apparatus of PDP (Plasma Display Panel) was described. Though the manufacture process of PDP was not yet established, a big progress was achieved by much maker recently. Final target for PDP of much maker is focused on the cost down of PDP.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.11
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• pp.98-105
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• 1999

As the IC(Integrated Circuit) has been densified and complicated, it is required to thorough process control to improve yield. Experts, for this purpose, focused on the process analysis automation, which is came from the strict data management in semiconductor manufacturing. In this paper, we presents the process analysis system that can analyze causes, for a output after processes. Also, the plasma etching process that highly affects yield among semiconductor process is modeled to predict a output before the process. To approach this problem, we use adaptively trained neural networks that exhibit superior accuracy over statistical techniques. And in comparison with methods in other paper, a method that history of trend for input data is considered is shown to offer advantage in both learning and prediction capability. This research regards CD(Critical Dimension) that is considerable in high integrated circuit as output variable of the prediction model.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.1-5
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• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• Preventive Nutrition and Food Science
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• v.9 no.4
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• pp.374-382
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• 2004

The concern of the antioxidant micronutrient status in normal healthy people, including antioxidant trace minerals such as Cu, Zn, Mn, Fe and Se is focused since systemic oxidation is involved in various chronic diseases. In the present study, we evaluated the concentration of trace minerals (Cu, Zn, Mn, and Fe) which are considered as potential antioxidant minerals in plasma, red blood cells (RBCs) and urine in normal healthy Korean subjects. The 760 subjects (male 341, female 419; mean age 54.2 $\pm$ 18.9) were recruited from the rural, urban and metropolitan city in South Korea. Dietary intake was evaluated using 24-hours recall for general major nutrient intake assessment. The trace elements (Cu, Zn, Mn, and Fe) concentrations in plasma, RBCs, and urine were measured by inductively coupled plasma spectrophotometer (ICP) and atomic absorption spectrophotometer (AAS). Cu and Zn levels in plasma, RBCs and urine in normal healthy South Koreans were within the normal range of those mineral levels, but Mn and Fe levels were higher compared to the normal range of those mineral levels. None of the selected trace mineral levels in plasma and RBC's was lower than the normal range value. The results showed that Zn and Cu levels in plasma and RBC's in Korean were within the normal range, and plasma and urinary Mn and Fe levels were higher than the normal reference values. Potential antioxidant trace mineral (Cu, Mn, Zn and Fe) levels in Koreans are within or a bit higher than the normal range.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.52-59
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• 2004

Recently, many researches for fine particles plasma have been focused on the fabrication of the new devices and materials in micro-electronic industry, although reduction or elimination of fine particles was interested in plasma processing until now on. In order to enhance their utilization, it is necessary to control and analyze fine particle behavior. Therefore, we developed simulation model of fine particles in RF Ar plasmas. This model consists of the calculation parts of plasma structure using a two-dimensional fluid model and of fine particle behavior. The motion of fine particles was derived from the charge amount on the fine particles and forces applied to them. In this paper, Ar plasma properties using two-dimensional fluid model without fine particles were calculated at power source voltage 15[V] and pressure 0.5[Torr]. Time-averaged spatial distributions of Ar plasma were shown. The process on the formation of Coulomb crystal of fine particles was investigated and it was explained by combination of ion drag and electrostatic forces. And also analysis on the forces of fine particles was presented.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.