• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.3 s.180
• /
• pp.56-60
• /
• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• Korean Chemical Engineering Research
• /
• v.50 no.1
• /
• pp.72-75
• /
• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.1
• /
• pp.6-10
• /
• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.564-564
• /
• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.247-247
• /
• 2012

Plasmon subwavelength nanostructures enable the structurally modulated color due to the resonance conditions for the specific wavelength range of light with the nanoscale hole arrays on a metal layer. While the unique properties offered from a single layer of metal may open up the potential applications of integrated devices to displays and sensors, fabrication requirements in nanoscale, typically on the order of or smaller than the wavelength of light in a corresponding medium can limit the cost-effective implementation of the plasmonic nanostructures. Simpler nanoscale replication technologies based on the soft lithography or roll-to-roll nanoimprinting can introduce economically feasible manufacturing process for these devices. Such replication requires an optimal design of a master template to produce a stamp that can be applied for a roll-to-roll nanoimprinting. In this paper, a master mold with subwavelength nanostructures is fabricated and optimized using focused ion beam for the applications to nanoimprinting process. Au thin film layer is deposited by sputtering on a glass that serves as a dielectric substrate. Focused ion beam milling (FIB, JEOL JIB-4601F) is used to fabricate surface plasmon subwavelength nanostructures made of periodic hole arrays. The light spectrum of the fabricated nanostructures is characterized by using UV-Vis-NIR spectrophotometer (Agilent, Cary 5000) and the surface morphology is measured by using atomic force microscope (AFM, Park System XE-100) and scanning electron microscope (SEM, JEOL JSM-7100F). Relationship between the parameters of the hole arrays and the corresponding spectral characteristics and their potential applications are also discussed.

• Proceedings of the KSME Conference
• /
• 2005.11a
• /
• pp.238.1-238.1
• /
• 2005

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.10a
• /
• pp.167-170
• /
• 2005

The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.

• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.3 s.192
• /
• pp.134-139
• /
• 2007

We report the suspension of individual multi-walled carbon nanotubes (MWNTs) from the bottom substrate using deep trench electrodes that were fabricated using optical lithography. During drying of the solution in dielectrophoretic assembly, the capillary force pulls the MWNT toward the bottom substrate, and it then remains as a deformed structure adhering to the bottom substrate after the solution has dried out. Small-diameter MWNTs cannot be suspended using thin electrodes with large gaps, but large-diameter MWNTs can be suspended using thicker electrodes. We present the statistical experimental results for successful suspension, as well as the feasible conditions for a MWNT suspension based on a theoretical approach.

• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.11
• /
• pp.108-115
• /
• 2007

We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

• Progress in Superconductivity
• /
• v.7 no.1
• /
• pp.17-21
• /
• 2005

We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.