• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2000년도 특별강연 및 추계학술발표대회 개요집
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• pp.284-286
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• 2000

• Journal of Welding and Joining
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• 제16권5호
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• pp.100-107
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• 1998

This paper describes fluxless soldering of reflow soldering process using solder foil instead of solder pastes. There is an increasing demand for the reliable solder connection in the recent high density microelectronic components technologies. And also, it is problem fracture of an Ozone layer due to freon as which is used to removal of remained flux on the substrate. This paper discussed joining phenomena, boudability and joining processes of microelectronics devices, such as between outer lead of VLSI package and copper pad on a substrate without flux. The shear strength of joints is 8 to 13 N using Sn/Pb (63/37 wt.%) solder foil with optimum joining conditions, meanwhile, in case of using Sn/In (52/48 wt.%) solder foil, it is possible to bond with low heating temperature of 550 K, and accomplish to high bonding strength of 25N in condition heating temperature of 650K. Finally, this paper experimentally shows fluxless soldering using solder foil, and accomplishes key technology of microsoldering processes.

• 한국표면공학회지
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• 제36권5호
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• pp.373-378
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• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• Journal of Welding and Joining
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• 제19권3호
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• pp.305-310
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• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Journal of Welding and Joining
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• 제18권6호
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• pp.74-82
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• 2000

The fluxless wetting properties of UBM-coated Si-wafer to the binary lead-free solders(Sn-Ag, Sn-Sb, Sjn-In, Sn0Bi) were estimated by wetting balance method. With the new wettability indices from the wetting curves of one side coated specimen, the wetting property estimation of UBM-coated Si-wafer was possible. For UBM of Si-chip, Au/Cu/Cr UBm was better than au/Ni/TI in the point of wetting time/ At general reflow process temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) was better than that of low melting point one(Sn-Bi, Sn-In). The contact angle of the one side coated Si-plate to the solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.138-140
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• 2001

Fluxless flip chip bonding using plasma & ultrasonic wave was investigated in order to evaluate the effect of plasma & ultrasonic treatment on the bondability of the Sn-3.5wt%Ag solder bumped die to TSM-coated glass substrate. The $Ar+10%H_2plasma$ was effective in removing tin oxide on solder surface. The die shear strength of the plasma-treated Si-chip is higher than that of non-treated specimen but lower than that of specimen bonded with flux. The die shear strength with the bonding load at 25W ultrasonic power increased to 0.8N/bump for all bonding temperature but decreased above 1.0N/bump.

• Journal of Welding and Joining
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• 제12권4호
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• pp.110-116
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• 1994

This paper has been researched bondability of electronics devices, such as lead frame and the thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realized fluxless bonding process with filler metal such as plating layers.

• Journal of Welding and Joining
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• 제20권4호
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Welding and Joining
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• 제34권2호
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• pp.36-45
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• 2016

Recent developing tendency for technologies of high efficient brazing are studied by searching of NDSL, Science Direct, KIPRIS, PCT and so on. Active metal brazing, arc brazing, fluxless brazing, brazing with low melting point, reactive air brazing, laser brazing, laser droplet brazing are investigated. By optimal selecting of the above mentioned technologies, it needs to investigate an economical metallurgical design and the advanced brazing methods. To improve the embrittlement of intermetallic compound at brazing interface, it must be studied the inexpensive variant metals including nonmetals and the heat sources(MIG, TIG, Laser) by hybrid techniques.