• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.300-303
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• 2004

To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.7 no.1
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• pp.22-32
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• 2021

Fluorine-18 is by far the most widely exploited radionuclide in PET (positron emission tomography) radiochemistry. The physical half-life of fluorine-18 allows for chemical manipulation within a restricted timeframe, and cyclotron-produced fluoride ion has been widely applied in aliphatic and aromatic nucleophilic radiofluorinations to produce a variety of established radiotracers. Radiotracers have become more structurally complicated to address diverse targets in physiobiological systems. There is therefore an unmet need to complement traditional C-¹⁸F bond-forming radiofluorination with new and efficient radiolabeling techniques to tackle the myriad of possible chemical environments. This review discusses recent advances in organometallic fluorine-18 bond creation in ¹⁸F-radiochemistry. Although not widely employed, new radiolabeling strategies for constructing boron-¹⁸F, silicon-¹⁸F, aluminum-¹⁸F, and other metal-¹⁸F bonds are described in view of their potential use in the development of novel radiopharmaceuticals.

• Proceedings of the Korean Society of Applied Pharmacology
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• 2001.11a
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• pp.81-81
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• 2001

The photoinducible DNA cleaving activities of bromofluoroacetophenones as a novel photonuclease were investigated. The photolytic behavior and DNA cleaving acitivity of fluorine derivative were compared with those of non-fluorine substituted compound, 4'-bromoacetophenones. Although the DNA cleaving activities of fluorine analogs were similar with those of 4'-bromoacetophenones, ο-bromo-$\rho$-fluoro derivatives gave the better DNA cleaving activities than $\rho$-bromo-ο-fluoro derivatives did.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.921.1-921.1
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• 2006

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.3 no.2
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• pp.129-133
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• 2017

Since carbon-fluorine (C-F) bonds play a key role to improve bioavailability and lipophilicity, they have found commonly in pharmaceuticals, radiopharmaceuticals, agrochemicals, and material science. Advances on the efficient method to introduce fluorine to complex organic molecules are mainly results of development of fluorination reagents and transition metal catalysts. In this mini-review, we want to emphasize two representative nucleophilic fluorinating reagents regarding carbon-fluorine bond formation, which were developed in the mid-2000s.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.27-33
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• 1998

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization.The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM 9Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$_{6}$ plasma treatment sulbsequent to the etching process preventas the corrosion effectively in the pressure of 300 mTorr. It is found that the cholrine atoms on the etched surface are not substituted for fluorine atoms during SF$_{6}$ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$_{6}$ treated surface and suppresses the corrsion sucessfully.fully.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.96-100
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• 1995

Recently, alumina/glass composites have been applied as a substrate material for hybrid IC and LSI multi-chip packaging. In this study, the characterization of sodium borosilicate glasses containing NaF and $AlF_3$ and the preparation of the resulted glass/alumina composites have been examined and the effect of the addition of fluorides on the thermal. and dielectric properties of the sintered composites have been studied. The sintering temperature of specimens was lowered by about 100-$150^{\circ}C$ by the addition of fluorine compared with the specimens without fluorine. The specimens containing fluorine showed slightly lower dielectric constants than those of the specimens without fluorine.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.662-667
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• 2013

The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on $p^+/n^+$ source and drain region. However these types of wiggling profile is only observed at the $n^+$ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.

• Bulletin of the Korean Chemical Society
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• v.11 no.3
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• pp.191-194
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• 1990

High-Tc superconducting materials, $YBa_2Cu_3O_xF_y$ with $x{\leq}6.89\;and\;0.25{\leq}y{\leq}0.35$, were prepared and Studied by X-ray diffraction, magnetic susceptibility and resistivity measurement. Under given conditions, reproducible resistivities were obtained, which increased with increase in the amount of fluorine. The introduced fluorine atoms were found to be localized in pyramidal Cu-O units rather than in Cu-O chains. It is suggested that the localized fluorine atom increases the electronic lolcalization of the superconducting electrons.

• 대한핵의학회:학술대회논문집
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• 1975.06a
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• pp.85.3-86
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• 1975