• Title/Summary/Keyword: Flow-Rate Uniformity

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Numerical Study of the Inertia Effect on Flow Distribution in Micro-gap Plate Heat Exchanger (유동관성에 따른 Micro-Gap 판형 열교환기 내부 유동분배 수치해석)

  • Park, Jang Min;Yoon, Seok Ho;Lee, Kong Hoon;Song, Chan Ho
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.38 no.11
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    • pp.881-887
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    • 2014
  • This paper presents numerical study on flow and heat transfer characteristics in micro-gap plate heat exchanger. In particular, we investigate the effect of flow inertia on the flow distribution from single main channel to multiple parallel micro-gaps. The flow regime of the main channel is varied from laminar regime (Reynolds number of 100) to turbulent regime (Reynolds number of 10000) by changing the flow rate, and non-uniformity of the flow distribution and temperature field is evaluated quantitatively based on the standard deviation. The flow distribution is found to be significantly affected by not only the header design but also the flow rate of the main channel. It is also observed that the non-uniformity of the temperature field has its maximum at the intermediate flow regime.

Effect of inlet configuration on the growth rate of GaN layer in a MOCVD reactor (MOCVD 반응로내 GaN 성장에 미치는 입구형상의 영향)

  • Yun, Sung-Kyu;Baek, Byung-Joon;Pak, Bock-Choon
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.67-72
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    • 2003
  • Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

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An experimental study of hot filament chemical vapor deposition for diamond films (HFCVD에 의한 다이아몬드 박막 증착에 관한 실험적 연구)

  • Kim, Yeong-Jae;Han, Dong-Cheol;Choe, Man-Su
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.22 no.5
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    • pp.563-572
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    • 1998
  • An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions (원거리 플라즈마 화학기상증착법을 사용하여 증착한 비정질 탄화규소 막의 증착조건에 따른 특성 및 증착 균일도 변화)

  • Cho, Sung-Hyuk;Choi, Yoo-Youl;Choi, Doo-Jin
    • Journal of the Korean Ceramic Society
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    • v.47 no.3
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    • pp.262-267
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    • 2010
  • a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

Experimental Study on Performance of Mini -Sprinkler -( 1 ) Sprinkling Flow Rate and Sprinkling Intensity Pattern (미니 스프링클러의 살수 성능실험-(1)살수량과 거리별 살수강도)

  • 서상룡;유수남;성제훈
    • Journal of Bio-Environment Control
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    • v.5 no.2
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    • pp.194-201
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    • 1996
  • A series of experiments to analyse and to compare performance of various types of mini-sprinkler was carried out. Twelve kinds of the sprinkler, which have various sizes of nozzle orifice diameter and structures of spreader, were selected to be tested. Flow (water sprinkling) rate and sprinkling intensity pattern from a sprinkler were measured as a first part of this study, and the results are as follows. Sprinkler flow rate of various sizes of nozzle orifice and applied water pressures could be predicted by Torricelli's theorem. Discharge coefficients of the Torricelli's theorem for the sprinkler nozzle of various sizes were determined by the experiment as 0.90- 0.95, 0.80-0.82 and 0.76-0.79 for 0.8, 1.2 and 1.6 mm of nozzle orifice diameter, respectively. Experiments on sprinkling intensity pattern resulted that nozzle orifice diameter and applied water pressure are major variables for uniformity of the sprinkling intensity. More uniform sprinklering patterns were noted with smaller nozzle orifice diameter of a sprinkler and at lower sprinkling pressure. Besides the variables, structure of spreader of a sprinkler is also an important variable for the uniformity of sprinkling intensity.

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Dry Etching of Polysilicon in Hbr/O2 Inductively Coupled Plasmas (Hbr/O2 유도결합 플라즈마를 이용한 폴리실리콘 건식식각)

  • 범성진;송오성;이혜영;김종준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.1-6
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    • 2004
  • Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 %. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

Effect of Particulate Matter and Ash Amount on Pressure Drop and Flow Uniformity of Diesel Particulate Filter Reduction System (입자상물질과 Ash양이 디젤매연여과장치 내의 배압 및 유동균일도에 미치는 영향)

  • Kim, YunJi;Han, DanBee;Seo, TaeWon;Oh, KwangChul;Baek, YoungSoon
    • Clean Technology
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    • v.26 no.1
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    • pp.22-29
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    • 2020
  • Recently, as the fine dust is increased and the emission regulations of diesel engines have been tightened, interest in diesel soot filtration devices has rapidly increased. There is specifically a demand for the technological development of higher diesel exhaust gas after-treatment device efficiency. As part of this, many studies were conducted to increase exhaust gas treatment efficiency by improving the flow uniformity of the exhaust gas in the diesel particulate filter (DPF) and reducing the pressure drop between the inlet and the outlet of DPF. In this study, the effects of pressure drop by the flow rate and temperature of exhaust gas, DPF I/O ratio, Ash, and PM amount in diesel reduction device were simulated via a 12" diameter DPF and diesel oxidation catalyst (DOC) using ANSYS Fluent. As the flow rate and temperature decreased, the pressure drop decreased, whereas the PM amount affected the pressure drop more than the ash amount and the pressure drop was lower in anisotropic DPF than isotropic DPF. In the case of DPF flow uniformity, it was constant regardless of the various variables of DPF. In ESC and ETC conditions, the filtration efficiency for PM was similar regardless of anisotropic and isotropic DPF, but the filtration efficiency for PN (particle number) was higher in anisotropic DPF than isotropic DPF.

Experimental study of turbulent flow in a scaled RPV model by PIV technology

  • Luguo Liu;Wenhai Qu;Yu Liu;Jinbiao Xiong;Songwei Li;Guangming Jiang
    • Nuclear Engineering and Technology
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    • v.56 no.7
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    • pp.2458-2473
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    • 2024
  • The turbulent flow in reactor pressure vessel (RPV) of pressurized water reactor (PWR) is important for the flow rate distribution at core inlet. Thus, it is vital to study the turbulent flow phenomena in RPV. However, the complicated fluid channel consisted of inner structures of RPV will block or refract the laser sheet of particle image velocimetry (PIV). In this work, the matched index of refraction (MIR) of sodium iodide (NaI) solution and acrylic was applied to support optical path for flow field measurements by PIV in the 1/10th scaled-down RPV model. The experimental results show detailed velocity field at different locations inside the scaled-down RPV model. Some interesting phenomena are obtained, including the non-negligible counterflow at the corner of nozzle edge, the high downward flowing stream in downcomer, large vortices above vortex suppression plate in lower plenum. And the intensity of counterflow and the strength of vortices increase as inlet flow rate increasing. Finally, the case of asymmetry flow was also studied. The turbulent flow has different pattern compared with the case of symmetrical inlet flow rate, which may affect the uniformity of flow distribution at the core inlet.

Optimization of down stream plasma ashing process (감광제 건식제거공정의 최적화)

  • 박세근;이종근
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.918-924
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    • 1996
  • A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

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Experimental Study of Reactive Ion Etching of Tungsten Films Using $SF_6$ Plasma ($SF_6$플라즈마를 이용한 텅스텐 박막의 반응성이온식각에 관한 실험적 연구)

  • 박상규;서성우;이시우
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.7
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    • pp.60-74
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    • 1993
  • Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

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