• Title/Summary/Keyword: Flow Resistivity

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Optimization of the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time (온도, 가스량 및 도핑시간변화에 따른 $POCI_3$ 도핑 공정의 최적화)

  • 정경화;강정진
    • Electrical & Electronic Materials
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    • v.7 no.3
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    • pp.206-212
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    • 1994
  • In this paper, We discuss the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time. The factors acted with $POCI_3$ doping are gas flow rate deposition temperature and time etc. Among them the temperature is the most important factor. For the $POCI_3$ flow rate, it should not exceed the resistivity saturation point developed on poly surface by annealing treatment. Therefore, this study suggests the optimum conditions of Poly-silicon treatments with the $POCI_3$ flow rate.

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Utilization of Induced Polarization and Electrical Resistivity for Identifying Rock Condition (유도분극 전하 충전성과 전기비저항을 활용한 암반 상태 파악 가능성 연구)

  • Park, Jinho;Ryu, Jinwoo;Jung, Jeehee;Lee, In-Mo
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.36 no.3
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    • pp.493-502
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    • 2016
  • This study examines how rock condition affects the variation of the chargeability and electrical resistivity of the rock. In the theoretical study, the relationship correlating chargeability with the variables affecting it is derived. A parametric study utilizing the derived relationship reveals that the size of narrow pores ($r_1$) is the most influential factor on chargeability, and the salinity of pore water ($C_0$) is the second. In the laboratory experiments, small scale rock fracturing zone is modelled using sand stone. Chargeability and resistivity are measured by changing the size of the joint aperture, the location of fractured zone and the existence of clay gouge and/or clay layer which shows lower chargeability than the sand stone layer in the multi-layered ground. Test results show that chargeability is controlled not by the rock fracturing condition but by the size of narrow pore ($r_1$) where each line of current flow passes through. Also, the chargeability decreases with increase of the pore water salinity ($C_0$). In conclusion, the ground condition can be identified more efficiently by measuring the induced polarization along with the electrical resistivity; identifying the existence of sea water, the layered ground and/or the fractured rock becomes more reliable.

Influence of electrode geometry on electrical resistivity survey: Numerical study (전극의 기하학적 형상이 전기비저항 탐사에 미치는 영향: 수치 해석 연구)

  • Tae-Young Kim;Seung-Hun Lee;Hee-Hwan Ryu;Song-Hun Chong
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.25 no.2
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    • pp.101-120
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    • 2023
  • Electrical resistivity survey have been widely conducted at diverse scales, from a few centimeters for laboratory tests to kilometers for field tests. It measures electrical resistance through relationship of electric potential difference and current between two electrodes penetrated on the surface of medium, and eventually quantifies electrical resistivity known as inherent properties of the medium. In field or full-scale test, it assumes the electrodes as equivalent half-sphere electrodes that have a same surface area with different electrodes for ease of calculation because the contact area between electrode and medium is small and sufficient distance between two electrodes. However, small-scale laboratory test is significantly affected by the electrode geometries (penetrated depth, height, radius of electrode and distance between electrodes), which change the equipotential surface and electric current flow. Indeed, the electrode geometries may eventually cause a difference of electrical resistivity value. This study reviews the theoretical electrical resistance derived with various electrode geometries (half-sphere, cylinder, cylindrical with half-spherical tip, cylindrical with conical tip) and verifies the developed numerical module by comparing results with the theoretical electrical resistance. The distributions of electrical resistance around electrodes and among electrodes are analyzed. In addition, it is discussed how the electrical characteristic of cylindrical electrode with conical tip widely used in field test has effect on the electric current flow.

Corrosion and Surface Resistance of Ni-C Composite by Electrodeposition (전해도금에 의한 Ni-C 복합층의 내식성 및 표면 전기저항)

  • Park, Je-Sik;Lee, Sung-Hyung;Jeong, Goo-Jin;Lee, Churl-Kyoung
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.288-294
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    • 2011
  • Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosion resistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carbon content in the Ni-C composite plate fell in a range of 9.2~26.2 at.% as the amount of carbon in the Ni Watt bath and the roughness of the composite were increased. The Ni-C composite with more than 21.6 at.% C content did not show uniformly dispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion. The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results such as passivation were not satisfactory; however, the Ni-C composite still displayed less than $10^{-4}$ $A/cm^2$ passivation current density. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching that of pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On the other hand, the surface resistivity of the Ni-C composite with 13 at.% C content was increased by only 1%. It can be confirmed that the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.

Optical and Electrical Properties of Fluorine-Doped Tin Oxide Prepared by Chemical Vapor Deposition at Low Temperature (저온 증착된 불소도핑 주석 산화 박막의 광학적·전기적 특성)

  • Park, Ji Hun;Jeon, Bup Ju
    • Korean Journal of Materials Research
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    • v.23 no.9
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    • pp.517-524
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    • 2013
  • The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

Electrical and Structural characteristics of ITO thin films deposited under different ambient gases (분위기 가스에 따른 ITO 박막의 전기적 및 구조적 특성)

  • Heo, Ju-Hee;Han, Dae-Sub;Lee, Yu-Lim;Lee, Kyu-Mann;Kim, In-Woo
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.4
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    • pp.7-11
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    • 2008
  • ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

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A Study on the Characterization of Ni-C Thin Films Utilizing a Dual-Source Deposition System (듀얼 소스 증착장치를 이용한 Ni-C 박막의 특성에 관한 연구)

  • Han, Chang-Suk;Chun, Chang-Hwan;Han, Seung-Oh
    • Journal of the Korean Society for Heat Treatment
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    • v.21 no.5
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    • pp.235-243
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    • 2008
  • Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

Preparation of ITO Thin Films for Display Application with $O_2$ Gas Flow Ratio and Input Current by FTS (Facing Targets Sputtering) System

  • Kim, H.W.;Keum, M.J.;Lee, K.S.;Kim, H.K.;Kim, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1477-1479
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

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Effect of diamond-like carbon film as passivation layer on characteristics of power transistor (전력 트랜지스터의 특성에 미치는 다이아몬드상 카본 passivation 막의 효과)

  • Park, Jung-Ho;Lim, Dae-Soon;Jung, Suk-Koo;Chang, Hoon;Shin, Jong-Han
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.11
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    • pp.97-104
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    • 1996
  • Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

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A Study on the Properties of Indium-Tin-Oxide(ITO) Films Deposited by DC magnetron sputtering method (DC magnetron sputtering 방법으로 형성한 Indium-Tin-Oxide(ITO) 박막의 특성 연구)

  • An, Myung-Hwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.3
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    • pp.473-478
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    • 2006
  • High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.