• 대한전자공학회논문지
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• 제4권1호
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• pp.3-12
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• 1967

증기반응법에 의한 산화석금속피막저항기(Tin Oxide Film Resistor)의 제법을 연구하고 이방법을 이용하여 제조한 저항피막의 전기적 성질을 관찰하였다. 이때 봉상의 파이렉스 유리(Pyrex glass rod) 표면에 산화석피막을 입혔다. 이 방법은 균질한 저항피막을 쉽게 얻을 수 있고, 진공계를 필요하지 않으므로 대량생산에 적합한 제법의 기초가 된다고 할수 있다. 본제법에 의하여 만든 제품중 표면저항 25ohm/sq에서 저항온도계수(T.C.R) 12ppm을 얻었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.171-173
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• 2001

ZnO:Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply using ZnO target containing 2wt% of $Al_2O_3$ and Zn metal target. Sputtering was carried out at substrate temperature of R.T. and $200^{\circ}C$ with a DC current of 0.6A, $O_2$ flow rate of $0.1{\sim}0.5$ and thickness $300{\sim}900nm$. ZnO:Al films showed a resistivity as low as $10^{-4}{\Omega}-cm$ and a transmittance above 85 % at wavelength 300 and 800nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• 한국세라믹학회지
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• 제41권9호
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• pp.653-656
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• 2004

(110) 배향 TiO$_2$ 단결정 위에 성장시킨 CrO$_2$(110) 박막의 결정 구조, 미세구조와 자기적 특성의 상관 관계에 대해 연구하였다. 소스 물질로는 CrO$_3$ 분말을 사용하였으며, 열분해 화학증착법으로 CrO$_2$박막을 형성하였다. (110) 배향된 TiO$_2$루타일 단결정 위에 형성된 CrO$_2$ 박막은 (110) 방향으로 우선 배향되었고, 미세구조적으로 평활한 박막을 형성하였다. 흘려주는 산소량이 많을수록 CrO$_2$ 박막의 두께가 두꺼워지고 저항치가 낮았으며, 음의 자기저항치의 변화 및 자기 이력 곡선에서 보자력과 잔류 자화 값이 감소하는 경향을 보였다.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• 한국소음진동공학회논문집
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• 제27권2호
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• pp.139-147
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• 2017

Acoustic performance of splitter silencers was investigated by using 3-dimensional commercial software and experiments. Flow resistivity of sound absorbing material was indirectly estimated by using an impedance tube setup and a curve fitting method. In addition the acoustic impedance of perforated plate was determined by an empirical formulation. Such properties have been used as input parameters in the commercial software. The prediction for a splitter silencer with 1000 mm length was compared with the experimental result. The numerical method is then applied to identify the effects of number of splitters, length of splitters, absorptive material density, and porosity of a perforated plate on the performance of the splitter silencers. As the number and length of splitter increases, the acoustic performance significantly increases. Although the increase of density of absorptive material also increase the acoustic performance, a change in the density over a certain level hardly affect it. The increase of porosity will enhance the performance especially at higher frequencies.

• 한국인쇄학회지
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• 제29권2호
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• pp.45-58
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• 2011

Gravure off-set printing recently is used in electronics display market. This method has advantages of mass production and high printing speed. It is also fine pattern can be implemented. We have manufactured low-curable conductive Ag pastes for gravure off-set printing. When printing, the pastes be used different silver powder shape because of the printing characteristics. The pastes were prepared with silver powder by silver powder shape and size, epoxy resin, solvent and homogenized on a standard three-roll mill. And the pastes exhibited a shear-thinning flow at viscosity profile. Moreover the adhesive strength and resistivity of silver film had a good characteristics. With the manufactured paste in this study, touch panel had is manufactured and it had $4{\times}10-5{\Omega}.cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.566-569
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• 2001

In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

• 한국지열·수열에너지학회논문집
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• 제14권1호
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• pp.22-29
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• 2018

The purpose of this study is to investigate the preliminary thermal performance of a plastic coated aluminum material(PCAM) plate heat exchanger. Plastic coating which has high corrosion resistivity and thermal conductivity can overcome corrosive weakness of aluminum material. The heat exchangers are modeled for STS316, Titanium and PCAM materials, and analyzed numerically using HTRI and ANSYS Fluent CFD softwares. The results show that PCAM heat exchanger is superior in heat transfer performance compared to existing materials. For chevron angle of $60^{\circ}$, thermal performances of Titanium and PCAM are higher by 12.2% and 48.9% when compared to STS316, respectively.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.491-495
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• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.