• 제목/요약/키워드: Flow Mobility

검색결과 270건 처리시간 0.025초

고내구성 하전 및 집진 방식 전기집진기의 미세입자 제거 특성 (Evaluation of Fine-Particle Removal Performance of Novel ESP with Highly Durable Chargers and Collectors)

  • 김학준;한방우;홍원석;신완호;송동근;정상현;김용진;오원석;황규동;유성연
    • 대한기계학회논문집B
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    • 제34권4호
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    • pp.423-428
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    • 2010
  • 반도체 공정에서 배출되는 미세입자를 포집하기 위하여 전기집진장치가 적용되고 있으나, 배출가스 내 포함된 강부식성 오염원에 의한 전기집진장치 내부 오염 및 부식 문제가 심각하여, 이를 해결하기 위한 방안이 절실하다. 본 연구에서는 탄소섬유로 이루어진 하전부와 PET 필름 사이에 금속 박막이 삽입된 집진부로 이루어진 내부식 전기집진장치를 개발하여, 하전부 및 집진부 인가전압, 처리유량, 하전부 채널 수 등의 운전 조건에 따른 전기집진기의 초미세입자 집진 성능을 평가하였다. 평균입경이 100 nm인 KCl 입자를 시험입자로 사용하였으며, 전기집진기 전/후단 입자 농도 변화를 측정하기 위하여 SMPS를 사용하였다. 본 연구에서 개발된 9채널 하전부와 65 mm 집진부로 구성된 전기집진기의 성능평가 결과, $500\;m^3/hr$ 유량조건에서 하전부 및 집진부에 7 kV와 10 kV를 각각 인가하였을 때, 300 nm입자에 대한 포집효율이 90% 이상으로 높게 나타났다.

도시 철도개통에 따른 대중교통이용 편익측정을 위한 대안적 평가모델 : 지하철 9호선을 사례로 (An Alternative Evaluation Model for Benefit Measurement of Public Transportation by the Open of Urban Railway: Seoul Metro Line 9)

  • 주용진
    • Spatial Information Research
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    • 제19권4호
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    • pp.11-20
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    • 2011
  • 저탄소 녹색성장 패러다임에 맞춰 지하철은 대중교통 활성화를 위한 도시 교통의 핵심 운송 수단이다. 지하철은 대량 수송 교통체증완화 교통사고 감소 등의 역할 뿐 아니라 노선 확장에 따라 도시 공간과 네트워크상의 승객 수요의 변화를 촉진시킨다. 현재 수요예측을 주축으로 노선계획이 이루어지고 있어, 지하철 노선 변화에 따른 교통 접근성과 승객 수요 변화를 위한 실증적인 연구가 미비하다. 이에 본 연구의 목적은 공간구문론을 이용한 사전사후 분석을 통해 지하철 개통에 따른 대중교통 영향성을 네트워크의 연결성, 승객 이동성 측면에서 정량적으로 예측 할 수 있는 대안적 평가 방법론을 제시하는 것이다. 우선 2009년 개통된 서울시 지하철 9호 선을 중심으로 도시 철도 네트워크를 구축하고, 공간 구문 모델을 통해 9호선이 개통됨에 따른 네트워크의 위상적 변화 패턴을 분석하였다. 또한, 모델 측정 결과를 검증하기위해, 서울시 교통 카드시스템의 역간 지하철 승차 인원수와 버스 노선별 승차 인원수 자료를 이용하여, 경쟁 노선을 대상으로 버스 이용객의 수단 전환과 주요 환승역에서 승객 수요 변화를 분석하였다. 결론적으로 본 연구 방법론을 통해 지하철 노선 계획에 있어 승객수요변화를 가시화하고 노선 추가에 따른 전후 시공간적 변화 분석이 가능하였으며 향후 주변 대중교통의 영향성과 실제 대중교통 이용자의 이동패턴에 대한 효과적인 공간적 변화 분석에 활용될 것으로 기대한다.

고용량 방사선 조사 후 골육종 세포주(Saos-2)의 아포프토시스 발생 (Induction of Apoptosis in Human Osteosarcoma Cell Lines(Saos-2) by Single Fraction High Dose Irradiation)

  • 김재도;정소학;홍영기;최장석
    • 대한골관절종양학회지
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    • 제5권1호
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    • pp.1-8
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    • 1999
  • A single fraction of 50 Gy extracorporeal irradiation, as a modality of limb-sparing operation, has been used to achieve tumor necrosis in osteosarcoma. Although this modality of radiation therapy preserving the mobility of a joint is commonly practiced, the precise knowledge on the radiobiological response of osteosarcoma cell has remained to be elucidated. We therefore observed whether a single high dose irradiation caused apoptosis in osteosarcoma cells and whether the commitment to apoptosis was associated with cell kinetics. We also investigated radiation dose response along the time course for development of apoptosis following single high dose irradiation. The morphologic change in apoptosis was observed by fluorescence with Hoechst 33258 and the degree and the fraction of cells by flow cytometry. Irradiation of osteosarcoma cells with 10, 30 and 50 Gy resulted in chromatin condensation and apoptotic body formation. The degree of apoptosis in osteosarcoma cells was $29.5{\pm}3.56%$, $39.9{\pm}4.83%$ at 24 and 48 hours after 10 Gy irradiation ; $41.1{\pm}3.93%$, $66.9{\pm}5.21%$ at 24 and 48 hours after 30 Gy irradiation ; and $48.0{\pm}3.69%$, $75.6{\pm}4.65%$ at 24 and 48 hours after 50 Gy irradiation. The fraction of cells in cell-cycle kinetic was $39.2{\pm}4.3%$ in G2/M, $22.1{\pm}4.65%$ in G1 at 24 hours after 10 Gy irradiation ; $51.0{\pm}4.3%$ in G2/M, $20.4{\pm}4.7%$ in G1 at 48 hours after 10 Gy irradiation ; $40.3{\pm}3.9%$ in G2/M, $26.1{\pm}4.7%$ in G1 at 24 hours after 30 Gy irradiation ; $59.2{\pm}3.9%$ in G2/M, $5.9{\pm}5.1%$ in G1 at 48 hours after 30 Gy irradiation ; and $44.3{\pm}4.2%$ in G2/M, $21.1{\pm}3.5%$ in G1 at 24 hours after 50 Gy irradiation. The fraction of cells at 48 hours after 50 Gy irradiation could not be observed because of irradiation induced cell death of most of cells. All values for irradiated cells showed accumulation in G2/M phase and reduction in G1 phase, irrespective of irradiation dose. The results suggest that a single fraction of high dose irradiation with 50 Gy results in accumulation of cells at G2/M phase, leading to apoptosis.

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방풍통성산의 동시분석 및 항산화 효능 연구 (Simultaneous Analysis of Bangpungtongseong-san and Its Antioxidant Effect)

  • 서창섭;김온순;신현규
    • 대한한의학방제학회지
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    • 제21권2호
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    • pp.133-143
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    • 2013
  • Objectives : We carry out the simultaneous quantification for quality control of four components in Bangpungtongseong-san (BPTSS) sample. In addition, we assessed the antioxidant effects of BPTSS sample. Methods : The used column for separation and analysis of four compounds was Luna C18 column and column oven temperature was maintained at $40^{\circ}C$. The mobile phase for simultaneous determination consisted of two solvent systems, 1.0% acetic acid in water and 1.0% acetic acid in acetonitrile. High performance liquid chromatography-photodiode array (HPLC-PDA) method for analysis was performed at a flow rate of 1.0 mL/min with PDA detection at 254 and 280 nm. The injection volume was 10 ${\mu}L$. The antioxidant activities of BPTSS were evaluated by measuring free radical scavenging activities on 2,2'-Azinobis-3-ethyl-benzothiazoline-6-sulfonic acid (ABTS) and 1-1-diphenyl-2-picrylhydrazyl (DPPH). The inhibitory effects on low-density lipoprotein (LDL) oxidation were evaluated by the formation of thiobarbituric acid relative substances (TBARS) and relative electrophoretic mobility (REM). Results : Calibration curves were acquired with $r^2{\geq}0.9999$. The values of limit of detection (LOD) and quantification (LOQ) were 0.06-0.29 ${\mu}g/mL$ and 0.20-0.98 ${\mu}g/mL$, respectively. The amounts of geniposide, liquiritin, baicalin, and glycyrrhizin in BPTSS were 5.06, 7.33, 27.56, and 7.81 mg/g, respectively. The BPTSS showed the radical scavenging activity in a dose-dependent manner. The concentration required for 50% reduction (RC50) against ABTS and DPPH radicals were 72.51 ${\mu}g/mL$ and 128.49 ${\mu}g/mL$. Furthermore, GMGHT reduced the oxidation properties of LDL induced by CuSO4. Conclusions : The established HPLC-PDA method will be helpful to improve quality control of BPTSS. In addition, BPTSS has potentials as therapeutic agent on anti-atherosclerosis.

15-Deoxy-${\Delta}^{12,14}$-Prostaglandin $J_2$ Upregulates the Expression of LPS-Induced IL-8/CXCL8 mRNA in Vascular Smooth Muscle Cells from Spontaneously Hypertensive Rats

  • Kim, Jung-Hae;Kim, Hee-Sun
    • IMMUNE NETWORK
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    • 제9권2호
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    • pp.64-73
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    • 2009
  • Background: 15d-$PGJ_2$ has been known to act as an anti-inflammatory agent and has anti-hypertensive effects. As a result of these properties, we examined the effect of 15d-$PGJ_2$ on the LPS-induced IL-8/CXCL8 mRNA expression in VSMCs from SHR. Methods: Effect and action mechanism of 15d-$PGJ_2$ on the expression of LPS-induced IL-8/CXCL8 mRNA in VSMCs from SHR and WKY were examined by using real-time polymerase chain reaction, electrophoretic mobility shift assay for NF-${\kappa}B$ avtivity, Western blotting analysis for ERK and p38 phosphorylation and flow cytometry for NAD(P)H oxidase activity. Results: 15d-$PGJ_2$ decreased the expression of LPS-induced IL-8/CXCL8 mRNA in WKY VSMCs, but increased the expression of LPS-induced IL-8/CXCL8 mRNA in SHR VSMCs. The upregulatory effect of 15d-$PGJ_2$ in SHR VSMCs was mediated through PPAR${\gamma}$, and dependent on NF-${\kappa}B$ activation and ERK phosphorylation. However, inhibition of the p38 signaling pathway augmented the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 mRNA. A NAD(P)H oxidase inhibitor inhibited the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 mRNA expression in SHR VSMCs, and an increase in NAD(P)H oxidase activity was detected in SHR VSMCs treated with 15d-$PGJ_2$/LPS. Conclusion: Our results indicate that the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 expression in SHR VSMCs is mediated through the PPAR${\gamma}$ and ERK pathway, and may be related to NAD(P)H oxidase activity. However, p38 inactivation may also play an important role in 15d-$PGJ_2$/LPS-induced IL-8/CXCL8 expression in SHR VSMCs.

The Effect of Transverse Magnetic field on Macrosegregation in vertical Bridgman Crystal Growth of Te doped InSb

  • Lee, Geun-Hee;Lee, Zin-Hyoung
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.522-522
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    • 1996
  • An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

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바이오폴리머를 포함한 모래지반의 흙-습윤 특성곡선 연구 (Soil-Water Characteristic Curve of Sandy Soils Containing Biopolymer Solution)

  • 정종원
    • 한국지반환경공학회 논문집
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    • 제19권10호
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    • pp.21-26
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    • 2018
  • 흙-습윤 특성곡선은 불포화토에서 물의 흐름, 다상유체에서의 상대투수계수, 그리고 흙의 강성 및 부피 변화를 이해하는데 필수적이다. 바이오폴리머는 미생물에 완전 분해가 가능한 자연에 무해한 친환경 물질이다. 따라서, 치토산, 폴리에틸렌 옥사이드, 잔탄검, 알지네이트염 및 폴리아크릴산 등과 같은 바이오폴리머가 지반복원, 지반성능향상 및 오일생산증진을 위해 연구되어왔다. 폴리아크릴산(polyacrylic acid)은 바이오폴리머의 일종으로, 유체의 흐름 특성 향상을 통하여 오일생산증진 및 지반복원 등의 분야에서 우수한 성능을 보여왔다. 따라서, 본 연구에서는 폴리아크릴산(polyacrylic acid)을 포함한 모래의 흙-습윤 특성곡선의 이해하기 위해서 실내시험을 수행하고, 이론적 모델의 매개변수 변화를 연구하였다. 그 결과, 폴리아크릴산(polyacrylic acid)의 농도가 증가함에 따라, 포화된 모래에 주입되는 공기의 주입 모세관압력이 증가함을 보이고, 높은 모세관압력에서의 잔류 함수비 역시 증가하고 있음을 보였다. 또한, 이론식 모델의 매개변수를 구하였으며, 이를 활용한 흙-습윤 특성곡선이 실내 실험 결과와 잘 일치하고 있음을 보였다. 따라서, 이론적 모델의 매개변수를 알고 있으면, 본 연구에서 활용된 폴리아크릴산(polyacrylic acid)이외의 바이오폴리머를 포함한 모래 지반의 흙-습윤 특성곡선이 예측이 가능함을 설명하였다.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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Knockdown of HMGN5 Expression by RNA Interference Induces Cell Cycle Arrest in Human Lung Cancer Cells

  • Chen, Peng;Wang, Xiu-Li;Ma, Zhong-Sen;Xu, Zhong;Jia, Bo;Ren, Jin;Hu, Yu-Xin;Zhang, Qing-Hua;Ma, Tian-Gang;Yan, Bing-Di;Yan, Qing-Zhu;Li, Yan-Lei;Li, Zhen;Yu, Jin-Yan;Gao, Rong;Fan, Na;Li, Bo;Yang, Jun-Ling
    • Asian Pacific Journal of Cancer Prevention
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    • 제13권7호
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    • pp.3223-3228
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    • 2012
  • HMGN5 is a typical member of the HMGN (high mobility group nucleosome-binding protein) family which may function as a nucleosomal binding and transcriptional activating protein. Overexpression of HMGN5 has been observed in several human tumors but its role in tumorigenesis has not been fully clarified. To investigate its significance for human lung cancer progression, we successfully constructed a shRNA expression lentiviral vector in which sense and antisense sequences targeting the human HMGN5 were linked with a 9-nucleotide loop. Inhibitory effects of siRNA on endogenous HMGN5 gene expression and protein synthesis were demonstrated via real-time RT-PCR and western blotting. We found HMGN5 silencing to significantly inhibit A549 and H1299 cell proliferation assessed by MTT, BrdU incorporation and colony formation assays. Furthermore, flow cytometry analysis showed that specific knockdown of HMGN5 slowed down the cell cycle at the G0/G1 phase and decreased the populations of A549 and H1299 cells at the S and G2/M phases. Taken together, these results suggest that HMGN5 is directly involved in regulation cell proliferation in A549 and H1299 cells by influencing signaling pathways involved in cell cycle progression. Thus, our finding suggests that targeting HMGN5 may be an effective strategy for human lung cancer treatment.

Ge 기판 위에 HfO2 게이트 산화물의 원자층 증착 중 In Situ 질소 혼입에 의한 전기적 특성 변화 (Improved Electrical Properties by In Situ Nitrogen Incorporation during Atomic Layer Deposition of HfO2 on Ge Substrate)

  • 김우희;김범수;김형준
    • 한국진공학회지
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    • 제19권1호
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    • pp.14-21
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    • 2010
  • Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1:1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.