• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.33 no.1
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• pp.9-26
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• 1997

Stokes drift(SD) and Lagrangian discharge(LD) are important factors for analysis of flushing time, tidal exchange, solute transport and pollutant dispersion. The factors should be calculated using the approached method to flow phenomena. The aim of this paper re-examines the previous procedures for computing the SD and LD, and is to propose the new method approached to stratified flow field in the cross-section of coastal region, e.g. Masan Bay. The intensity of velocity near the bottom boundary layer(BBL) depends on the sea-bed irregularity in the coastal estuaries. So we calculated the depth mean velocity(DMV) considering that of BBL omitted in Kjerfve's calculation method. It revealed that BBL effect resulting in application of the bay acts largely on DMV in half more among 1l stations. The new expression of SD and LD per unit width in the cross-section using the developed DMV and proposed decomposition procedure of current were derived as follow : $$Q=u_0+\frac{1}{2}H_1{U_1cos(\varphi_h-\varphi_u)+U_3cos(\varphi_h-\varphi{ud})} LD ED SD$(Q_{skim}+Q_{sk2}) The third term, $Q_{sk2}$, on the right-hand of the equation is showed newly and arise from vertical oscillatory shear. According to the results applied in 3 cross-sections including 11 stations of the bay, the volume difference between proposed and previous SD was founded to be almost 2 times more at some stations. But their mean transport volumes over all stations are 18% less than the previous SD. Among two terms of SD, the flux of second term, $Q_{skim}$, is larger than third term, $Q_{sk2}$, in the main channel of cross-section, so that $Q_{skim}$ has a strong dependence on the tidal pumping, whereas third term is larger than second in the marginal channel. It means that $Q_{sk2}$ has trapping or shear effect more than tidal pumping phenomena. Maximum range of the fluctuation in LD is 40% as compared with the previous equations, but mean range of it is showed 11% at all stations, namely, small change. It mean that two components of SD interact as compensating flow. Therefore, the computation of SD and LD depend on decomposition procedure of velocity component in obtaining the volume transport of temporal and spacial flow through channels. The calculation of SD and LD proposed here can separate the shear effect from the previous SD component, so can be applied to non-uniform flow condition of cross-section, namely, baroclinic flow field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.1
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• pp.81-86
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• 2003

For the simultaneous removal of $SO_2$/NOx from an iron-ore sintering plant, industrial plasma experiments have been conducted with a flue gas flow rate of $5,000Nm^3/hr$. The maximum 40kW power using the magnetic pulse compression (MPC) system generates a peak value of 100-150kV pulse voltage with its risetime of 200nsec and full width at half maximum (FWHM) of 500nsec, and with a frequency <300Hz. The plasma reactor module adopts a wire-plate structure with a gap of 200-400mm ID between plates. Initial concentrations of $SO_2$ and NOx were around 100-150ppm, respectively in the presence of 15% $O_2$ and <10% $H_2O$. Various reaction parameters such as specific energy ($Whr/Nm^3$), $NH_3$ injection with corona discharge, flow rate and injection of hydrocarbons were investigated for $SO_2$/NOx removal characteristics. About 90/65% of $SO_2$/NOx were simultaneously removed with a specific energy of $3.0Whr/Nm^3$ when both $NH_3$ and hydrocarbons were injected. Practical implications that the pilot-scale plasma results provide are further discussed.

• 한국가시화정보학회:학술대회논문집
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• 2001.12a
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• pp.86-99
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• 2001

Vortex lock-on or resonance in the flow behind a circular cylinder is investigated from a time-resolved PIV when a single frequency oscillation is superimposed on the mean incident velocity. Measurements are made of the $K\acute{a}rm\acute{a}n$ and streamwise vortices in the wake-transition regime at the Reynolds number 360. Streamwise vortices at the lock-on and natural shedding states are observed, as well as the changes in the wake region with the change of the shedding frequency of lock-on state. When lock-on occurs, the vortex shedding frequency is found to be half the oscillation frequency as expected from previous experiments. At the lock-on state, the $K\acute{a}rm\acute{a}n$ vortices are observed to be more disordered by the increased strength and spanwise wavelength of the streamwise vortices, which leads to a strong three-dimensional motion. Recirculation and vortex formation region at the lock-on state is reduced as the oscillating frequency is increased. By comparing the Reynolds stresses at the lock-on and natural shedding states, $\bar{u'u'}\;and \;\bar{u'u'}$ at the lock-on state are concentrated on the shear layer around the cylinder. The $\bar{u'u'}\;at\;f_o/f_n=2.0$ has a large value near the centerline, compared with that of other cases. Considering the traces of maximum of u', in the wake region near the cylinder, wake width at the lock-on state is wider than that at the natural shedding state.

• Wind and Structures
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• v.15 no.1
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• pp.17-26
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• 2012

Modeling swirling wakes is of considerable interest to wind farm designers. The present work is an attempt to develop a computational tool to understand free, far-wake development behind a single rotating wind turbine. Besides the standard momentum and continuity equations from the boundary layer theory in two dimensions, an additional equation for the conservation of angular momentum is introduced to study axisymmetric swirl effects on wake growth. Turbulence is simulated with two options: the standard ${\kappa}-{\varepsilon}$ model and the Reynolds Stress transport model. A finite volume method is used to discretize the governing equations for mean flow and turbulence quantities. A marching algorithm of expanding grids is employed to enclose the growing far-wake and to solve the equations implicitly at every axial step. Axisymmetric far-wakes with/without swirl are studied at different Reynolds numbers and swirl numbers. Wake characteristics such as wake width, half radius, velocity profiles and pressure profiles are computed. Compared with the results obtained under similar flow conditions using the computational software, FLUENT, this far-wake model shows simplicity with acceptable accuracy, covering large wake regions in far-wake study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Journal of Bio-Environment Control
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• v.6 no.4
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• pp.284-291
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• 1997

This study was conducted to evaluate the optimum hydroponic system and nutrient solution for shortening the early growth period and quality improvement of dendrobium ( Dendrobium Phalaenopsis) seedlings. Dendrobium seedlings with 3 to 4 leaves were transplanted in the deep flow technique(DFT) system, aeroponic system, and ebb and flow system with different concentration of balanced nutrient solutions recommended by the Japanese Horticultural Experiment Station. Growth characteristics of shoot and root were recorded and evaulated among treatments. For autumn cultivation, plant height was the longest at the DFT system with quarter concentration of nutrient solution, where aeroponic system with half concentration of nutrient solution. Aeroponic system stimulated the root growth but fresh weight was observed in the plots of DFT system. For spring cultivation, pH values increased up 7.5 at the DFT and aeroponic system, where EC values did not fluctuate regardless of cultural system. Ebb and flow system showed the best result in the growth of plant followed by BFT system and aeroponic system. Higher concentration of nutrient solution within this range of treatment was recommended for the growth promotion of leaf length and width in DFT system. In conclusion, growth responses differed depending on the cultural system, concentrations of nutrient solutions and duration of cltivation.