• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.581-581
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• 2013

ITO (Indium Tin oxide)는 비화학 양론적 조성을 띄는 n-type 반도체 특성이 있으며 가시광 영역(380~780 nm)의 파장에 대한 높은 광 투과도(>85%)를 가지며 비교적 높은 전도도(${\sim}10^4/{\Omega}-cm$)를 갖고 화학적 안정성이 우수하여 투명전극 박막으로 많이 사용되어왔다. 또한, PET film은 전기절연성, 내후성이 우수하고, 85%의 투과율을 보이는 특성에 의하여 Flexible display의 기판으로 많은 연구가 진행되고 있다. 이와 같은 PET film에 ITO를 증착하여 광 투과도와 전기전도도가 우수한 Flexible display의 투명전극으로 많은 연구 개발이 이루어지고 있다. Flexible ITO 박막의 특성을 향상하기 위해서는 $200^{\circ}C$ 이상의 열처리 공정이 필요하지만, PET는 약 $200^{\circ}C$ 이상에서 열 변형이 일어나므로 열처리 공정이 어렵고 이러한 문제점을 해결하기 위해 ITO/PET film에서 PET film의 변형 없이 ITO 박막의 표면에 전자빔 형태로 조사하여 박막의 물성을 개선하는 연구가 진행되고 있다 [1]. 본 연구에서는 ITO/$SiO_2$가 증착된 PET film에 전자빔을 조사하여 ITO 박막의 물성 변화를 관찰하였고, 전자빔 에너지 변화 및 전자빔 조사 시간에 따라 ITO film의 전기적, 광학적 특성 변화를 분석하였다. 구조적 특성은 XRD (X-ray diffraction), 전기적 특성은 4-point probe, Hall measurement를 이용하였으며, 가시광영역의 광 투과도는 UV-Vis spectrometer로 측정하였다. 전기 광학적 특성 변화는 Figure of Merit (FOM) 수치로 분석하였다. 이 실험으로 PET film에 직접적인 열을 가하지 않으면서 ITO 박막의 표면에 전자빔을 조사 하여, 박막의 전기전도도 및 광 투과율, 결정성 향상 등을 관찰할 수 있었다.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.490-496
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• 2006

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 ${\AA}$, and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9${\Omega}/{\square}$ was observed, the effective application of low temperature process is expected to be possible for ITO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.401-402
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• 2007

The preparation and characteristics of ITO anode films grown using a linear facing target sputtering (FTS) technique for use in organic light emitting diodes (OLED) and flexible OLED is described. The electrical, optical, and work function of the ITO anode, which was prepared by linear FTS at room temperature, were comparable to those of commercial ITO anode films. In particular, linear FTS-grown ITO films shows very smooth surface without defects such as pin hole and cracks due to low substrate temperature. Furthermore OLED with the linear FTS-grown ITO anode film shows comparable electrical and optical properties to those of OLED with the commercial crystalline-ITO anode film. This suggested that linear FTS is promising thin film technology for preparing high quality anode film in OLEDs and flexible OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.374-374
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• 2010

본 연구는 Roll-to-Roll Sputtering 장비를 사용하여 제작된 Flexible ITO electrode 필름의 방사선 검출기로의 적용가능성을 알아보기 위해 기존의 Glass ITO electrode의 전기적 특성을 비교 평가하였다. 본 연구는 Flexible ITO electrode와 Glass ITO electrode을 하부전극으로 형성하고, 최근에 X-ray 변환체로 활발히 연구되고 있는 Powder 형태의 반도체물질인 HgI2 와 PbI2를 Binder와 일정한 비율로 혼합하여 3-Rolls-Miller를 사용하여 Powder를 일정한 미세크기로 만들고, 대면적 제작이 용이한 Screen-Printing method을 이용하여 시편을 제작하였다. 제작된 필름은 하부전극의 종류에 따른 X-ray 입사 후의 전기적신호의 차이를 측정하고, HgI2와 PbI2 중 Flexible ITO electrode와 더욱 효율적으로 반응하여 기존의 Glass ITO electrode를 대체할 수 있는 전극을 발견하여 진단용 의료영상의 왜곡 현상을 제거할 수 있는 Flexible 방사선 검출기의 제작의 초석을 제공하는 연구를 목적으로 한다. SEM(Scanning Electron Microscope) 통하여 반도체 물질의 결정구조와 크기를 알아보았고, 하부 전극의 종류에 따른 전기적 신호검출을 위해 제작된 필름의 암전류(Dark current) 와 민감도(Sensitivity)를 측정한 후, SNR (Signal -to- Noise)을 계산하여 평가하였다.

• Laser Solutions
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• v.13 no.1
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1115-1120
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• 2003

In this paper, we investigated the position dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge, In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.327-332
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• 2010

We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.

• Polymer(Korea)
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• v.36 no.3
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• pp.393-400
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• 2012

The characteristics of indium tin oxide (ITO) thin film deposited on polyethersulfone (PES) film by low temperature E beam has been studied for the flexible photovoltaic devices. It was found that the substrate temperature in the deposition process affected the crystallization behavior of ITO during the post low temperature annealing process. Higher substrate temperature resulted in the increase of crystallinity of annealed ITO. Consequently, the lowering of sheet resistivity and better transmittance were obtained. Crystallization of ITO during the annealing process was facilitated by using oxygen gas in the deposition process and resulted in the enhancement on sheet resistivity and transmittance of ITO. The surface roughness of PES film prohibited the crystallization of ITO during the annealing process and it caused the increase of sheet resistivity and the decrease of transmittance of ITO.

• Laser Solutions
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• v.17 no.1
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.