• Title/Summary/Keyword: Flat-panel displays

Search Result 185, Processing Time 0.038 seconds

AC-Based Characterization of Quantum-Dot Light-Emitting Diodes

  • Hwang, Hee-Soo;Lee, Ki-Hun;Park, Chan-Rok;Yang, Heesun;Hwang, Jinha
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.466-466
    • /
    • 2013
  • Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

  • PDF

The Optical and Electrical Properties of Vacuum-Deposited Thin Films using Europium Complex [Eu(TTA)$_3$(phen)]

  • 이명호;김영관;이한성;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.11a
    • /
    • pp.53-56
    • /
    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

  • PDF

Polymer Light-Emitting Diode with Controlled Nano-Structure

  • Park, O-Ok;Lim, Yong-Taik;Park, Jong-Hyeok;Lee, Ho-Chul;Kim, Tae-Ho;Lee, Hang-Ken
    • Proceedings of the Polymer Society of Korea Conference
    • /
    • 2006.10a
    • /
    • pp.194-194
    • /
    • 2006
  • Polymer light-emitting diodes(PLEDs) have great potential application in large area flat panel displays and general lighting so intense academic and industrial research, and impressive scientific and technological progress has been achieved in this field. However, the efficiency and stability of PLEDs till need to be improved in order to fully realize the advantages of low cost and ease of fabrication provided by organic materials. Here, we report our effort to enhance the PLED' s performance in two approaches : 1) Utilizing nano-structured materials such as nano particles, clay, nano porous silica in active layer 2) Modifying the device structure in nano scale to improve not only the device efficiency but also its stability.

  • PDF

Effect of Oxygen Pressure on the properties of Ga-doped ZnO Thin Films Prepared by Pulsed Laser Deposition at Low Temperature (PLD로 저온 증착한 Ga-doped ZnO 박막의 산소 분압에 따른 영향)

  • Moon, Sung-Joon;Kim, Ji-Hong;Roh, Ji-Hyung;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.297-297
    • /
    • 2010
  • Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

  • PDF

Evaluation of a Wafer Transportation Speed for Propulsion Nozzle Array on Air Levitation System (공기 부상방식 이송시스템의 추진 노즐 배치방법에 따른 웨이퍼 이송 속도 평가)

  • Hwang Young-Kyu;Moon In-Ho
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.30 no.4 s.247
    • /
    • pp.306-313
    • /
    • 2006
  • Automated material handling system is being used as a method to reduce manufacturing cost in the semiconductor and flat panel displays (FPDs) manufacturing process. Those are considering switch-over from the traditional cassette system to single-substrate transfer system to reduce raw materials of stocks in the processing line. In the present study, the wafer transportation speed has been evaluated by numerical and experimental method for three propulsion nozzle array (face, front, rear) in an air levitation system. Test facility for 300 mm wafer was equipped with two control tracks and a transfer track of 1,500mm length. The diameter of propulsion nozzle is 0.8mm and air velocity of wafer propulsion is $50\sim150m/s$. We found that the experimental results of the wafer transportation speed were well agreed with the numerical ones. Namely, the predicted values of the maximum wafer transportation speed are higher than those values of experimental data by 16% and the numerical result of the mean wafer transportation speed is higher than the experimental result within 20%.

Development of Levitation Control for High Accuracy Magnetic Levitation Transport System (초정밀 자기부상 이송장치의 부상제어기 개발)

  • Ha, Chang-Wan;Kim, Chang-Hyun;Lim, Jaewon
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.22 no.7
    • /
    • pp.557-561
    • /
    • 2016
  • Recently, in the manufacturing process of flat panel displays, mass production methods of inline system has been emerged. In particular the next generation OLED display manufacturing process, horizontal inline evaporation process has been tried. It is important for the success of OLED inline evaporation process to develop a magnetic levitation transport system capable of transferring a carrier equipped with a mother glass with high accuracy without any physical contact along the rail under vacuum condition. In the case of existing wheel-based transfer system, it is not suitable for OLED evaporation process requiring high cleanliness. On the other hand, the magnetic levitation transport system has an advantage that it does not generate any dust and it is possible to achieve high-precision control because there are not non-linear factors such as friction force. In this paper, we introduce the high-precision magnetic levitation transport system, which is currently under development, for OLED evaporation process.

Enhanced Field Emission Behavior from Boron-Doped Double-walled Carbon Nanotubes Synthesized by Catalytic Chemical Vapor Deposition

  • Kang, J.H.;Jang, H.C.;Choi, J.M.;Lyu, S.C.;Sok, J.H.
    • Journal of Magnetics
    • /
    • v.17 no.1
    • /
    • pp.9-12
    • /
    • 2012
  • Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

Thermocompression Anisothropic Conductive Films(ACFs) bonding for Flat Panel Displays(FPDs) Application (평판디스플레이를 위한 열압착법을 이용한 이방성 도전성 필름 접합)

  • Pak, Jin-Suk;Jo, Il-Jea;Shin, Young-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.3
    • /
    • pp.199-204
    • /
    • 2009
  • The effect of temperature on ACF thermocompression bonding for FPD assembly was investigated, It was found that Au bumps on driver IC's were not bonded to the glass substrate when the bonding temperature was below $140^{\circ}C$ so bonds were made at temperatures of $163^{\circ}C$, $178^{\circ}C$ and $199^{\circ}C$ for further testing. The bonding time and pressure were constant to 3 sec and 3.038 MPa. To test bond reliability, FPD assemblies were subjected to thermal shock storage tests ($-30^{\circ}C$, $1\;Hr\;{\leftrightarrow}80^{\circ}C$, 1 Hr, 10 Cycles) and func! tionality was verified by driver testing. It was found all of FPDs were functional after the thermal cycling. Additionally, Au bumps were bonded using ACF's with higher conductive particle densities at bonding temperatures above $163^{\circ}C$. From the experimental results, when the bonding temperature was increased from $163^{\circ}C$ to $199^{\circ}C$, the curing time could be reduced and more conductive particles were retained at the bonding interface between the Au bump and glass substrate.

Characterization of Al2O3 Thin Film Encasulation by Plasma Assisted Spatial ALD Process for Organic Light Emitting Diodes

  • Yong, Sang Heon;Cho, Sung Min;Chung, Ho Kyoon;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.234.2-234.2
    • /
    • 2014
  • Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

  • PDF

Vibration Analysis of the Large Substrate Handling Robot (8.5G 솔라셀 평판 핸들링 로봇의 진동 제어)

  • Park, Dong Il;Park, Cheolhoon;Park, Chanhun;Kim, Doohyung
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.25 no.6
    • /
    • pp.498-503
    • /
    • 2016
  • Many types of robot systems are used in the mass production line of thin film solar cells and flat panel displays. There are some issues such as the deflection and the vibration of the end-effector because robots handle large and heavy substrates at high speed. Heavy payload and high speed cause much vibration because the end-effector (fork) is made of carbon fiber reinforced polymer because of its light weightiness and sufficient stiffness. This study performs a dynamic simulation of an 8.5G solar cell substrate handling robot, including rigid and flexible bodies and a vibration controller. The fifth polynomial trajectory and the zero vibration derivative input shaping algorithm are applied. The vibration reduction is also proved in the experiments.