• Title/Summary/Keyword: Flash Design

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Design of CMOS 4 Bit Flash Type A/D Converter Using Variable Threshold Logic (가변 문턱치 논리회로를 이용한 CMOS 4 Bit 전병렬 비교형 A/D 변환기 설계)

  • Kim, Tae-Kyung;Rju, Jong-Pil;Chung, Ho-Sun;Lee, Wu-Il
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.599-603
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    • 1988
  • In this paper, a flash type A/D converter using Variable Threshold Logic circuit is designed and is layonted by double metal CMOS 2 um design rule. Comparator and register string which is the basic elements of a general flash type A/D converter are substituted by simple comparator circuit which is slightly modified from cmos inverter.

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The Design of Flash Lantern using LED for aironautical ground lights (LED를 이용한 항공등의 점멸 방법에 대한 연구)

  • Jeong, Hak-Geun;Jung, Bong-Man;Park, Suk-In;Yu, Seung-Won;Shin, Kyu-Yong
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2006.05a
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    • pp.157-159
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    • 2006
  • The advantages of LED(Light Emitting Diode) are low electric power consumption, long life time and excellent visibility. And a LED light source does not include the mercury(Hg) and or a filament, it is expected as an environmentally friendly next generation light source with its good reliability. In order to design and develope the flash lantern using LED for aironautical ground lights, technical trends and new standards about the aironautical ground lights were inspected, and power consumption and flash time for effective luminous intensity of aironautical ground lights were analyzed.

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The Compatibility of MSDS through the Investigation of the Combustible Properties for MEK (MEK의 연소특성 고찰을 통한 MSDS의 적정성)

  • Ha, Dong-Myeong
    • Journal of the Korean Society of Safety
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    • v.23 no.3
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    • pp.36-41
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    • 2008
  • For the safety design and operation of many chemical process, it is necessary to know certain explosion limit, flash point and autoignition temperature(AIT) of handling substances. Also it is necessary to know explosion limit at high temperature and pressure. For the safe handling of MEK(methyl ethyl ketone), explosion limit at $25^{\circ}C$ and the temperature dependence of the explosion limits were investigated. And flash point and AIT for MEK were experimented. By using the literatures data, the lower and upper explosion limits of MEK recommended 1.8 vol% and 11.0 vol%, respectively. In this study, measured the lower and upper flash points of MEK were $-5^{\circ}C$ and $22^{\circ}C$, respectively. This study measured relationship between the AITs and the ignition delay times by using ASTM E659-78 apparatus for MEK, and the experimental AIT of MEK was $507^{\circ}C$. The new equations for predicting the temperature dependence of the explosion limits of MEK is proposed. The values calculated by the proposed equations were a good agreement with the literature data.

Design of a Sense Amplifier Minimizing bit Line Disturbance for a Flash Memory (비트라인 간섭을 최소화한 플래시 메모리용 센스 앰프 설계)

  • Kim, Byong-Rok;So, Kyoung-Rok;You, Young-Gab;Kim, Sung-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.1-8
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    • 2000
  • In this paper, design of sense amplifier for a flash memory minimizing bit line disturbance due to common bit line is presented. There is a disturbance problem at output modes by using common bit line, when the external devices access an internal flash memory. This phenomenon is resulted form hot carrier between floating gates and bit lines by thin oxide thickness. To minimize bit line disturbance, lower it line voltage is required and need sense amplifier to detect data existence in lower bit line voltage. Proposed circuits is operated at lower bit line voltage and we fabricated a embedded flash memory MCU using 0.6u technology.

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Design and Implementation of Flash Cryptographic File System Based on YAFFS (YAFFS 기반의 암호화 플래시 파일 시스템의 설계 및 구현)

  • Kim, Seok-Hyun;Cho, Yoo-Kun
    • Convergence Security Journal
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    • v.7 no.4
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    • pp.15-21
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    • 2007
  • As the amount of flash memory being used in embedded device is increased and embedded devices become more important in many computing environments, embedded file system security becomes more important issue. Moreover embedded devices can be easily stolen or lost because of it's high portability. If the lost embedded device has very important information, there's no means to protect it except data encryption. For improving embedded devices' security this paper propose design and implementation of flash cryptographic file system. For this purpose YAFFS is used. By the modified YAFFS cryptographic file system, the security of embedded devices can be improved.

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A Study on the Development of Shoe Outsole Mold for Flash-less (플래시 발생 억제형 신발 밑창 금형 개발에 관한 연구)

  • Hur Kwan Do;Yeo Hong Tae;Choi Young
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.1
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    • pp.103-108
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    • 2005
  • In this study, to develop a flash-less mold for forming of shoe-outsole, experiments and forming analysis were carried out. In order to reduce the extra-materials, offset method and mass distribution method are used in the preform design. The vertical mold structure pressing the preform was introduced to produce a flash-less shoe-sole. To measure the contact status of parting surface of mold, the pressure film has been used. The guide-gutter system and the continuous pressing mold have been developed for the discharge of extra-materials and re-pressing. By the investigation, flash of shoe-outsole was considerably reduced.

Design of an Intelligent Ambulatory Monitoring System Using Flash Memory Card (Flash Memory Card를 이용한 Intelligent Ambulatory Monitoring 시스템 설계)

  • Song, G.K.;Lee, K.J.;Yoon, H.R.
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.05
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    • pp.330-333
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    • 1997
  • In this paper, we designed a low power and small-sized, light weighted intelligent ambulatory monitoring system using a flash memory card. The system's hardware specifications are as follows: 2 channels, 8bit/250Hz sampling rate, 20M byte storage capacity, a single-chip microcontroller (68HC11E9). To easily interface with PC based system, FFS(Flash File System) was used. We obtained the QRS detection rate of 99.14 through the evaluation with MIT/BIH database.

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Fast NAND Flash Memory System for Instruction Code Execution

  • Jung, Bo-Sung;Kim, Cheong-Ghil;Lee, Jung-Hoon
    • ETRI Journal
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    • v.34 no.5
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    • pp.787-790
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    • 2012
  • The objective of this research is to design a high-performance NAND flash memory system containing a buffer system. The proposed instruction buffer in the NAND flash memory consists of two parts, that is, a fully associative temporal buffer for temporal locality and a fully associative spatial buffer for spatial locality. A spatial buffer with a large fetching size turns out to be effective for serial instructions, and a temporal buffer with a small fetching size is devised for branch instructions. Simulation shows that the average memory access time of the proposed system is better than that of other buffer systems with four times more space. The average miss ratio is improved by about 70% compared with that of other buffer systems.

Caching and Prefetching Policies Using Program Page Reference Patterns on a File System Layer for NAND Flash Memory (NAND 플래시 메모리용 파일 시스템 계층에서 프로그램의 페이지 참조 패턴을 고려한 캐싱 및 선반입 정책)

  • Kim, Gyeong-San;Kim, Seong-Jo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.777-778
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    • 2006
  • In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.

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The Effect of Metallic Barrier on the Surface creeping Flash-over Voltage along the Insulation Materials (절연물의 연면섬락 전압에 미치는 금속 격벽의 영향)

  • Sung Kae Chung
    • 전기의세계
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    • v.14 no.2
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    • pp.8-13
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    • 1965
  • It is expected that the impurities contained in a solid state insulation material will affect a considerable influence on its break-down voltage, dielectric loss, and insulation resistance. In this thesis, as a preliminary experimental research for the investigation described above, the effect of metalic barrier between the electrodes on the creepin flash over discharge voltage along the surface of a solid insulation material has been investigated, and got some interesting results. It was found that generaly the flash over voltage rises when a metalic barrier is located between the electrodes. The results of this investigation will be taken into account as an important components on the insulation design to prevent the creeping flash over discharge in insulators, bushings, and so on.

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