• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.80.2-80.2
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.97-97
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• 1997

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1144-1149
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• 2001

In this research, the fabrication of Si/SiO$_2$optical waveguide amplifier by FHD(Flame Hydrolysis Deposition) and Solution Doping was carried out. It was observed that the reduction of fluorescence was prevented up to 0.14 wt% Er whn 0.48 wt% Al was doped and the FWHA of $1.5mutextrm{m}$ fluorescence band increased by 5 nm as increasing amount of Al. Therefore from these results, we could confirm depressing concentration quenching of Er ions and increasing FWHM of fluorescence spectrum by addition of Al.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.499-504
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• 1994

Ti-doped BSG (borosilicate glass) soot films on the silicone substrate have been deposited in the mixture of $SiCl_{4}$, TMB, $TiCL_{4}$ by flame hydrolysis deposition technique. The soot films are melted to form integrated fine glass films. We can fabricate thick films of serveral $10{\mu}m$ with deposition rate,more than $0.5{\mu}m$/min. Refractive index difference of BSG films are increased to more than 0.3% as function of the amount of Ti dopant. As a result of the process an optical waveguide which is simmilar with dimmension and refractive difference of optical fiber is produced. $BCl_{3}$ is widely used for B dopant, but we abtained the good results by the use of TMB in place of $BCl_{3}$. The melting point of silica soot glass is reduced to $1200^{\circ}C$ increasing B dopant. From FTIR analysis $B_2O_3$ content up to about lOmol% in BSG films. films.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.9
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• pp.1139-1150
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• 1999

The evolution of silica aggregate particles in coflow diffusion flames has been studied experimentally using light scattering and thermophoretic sampling techniques. The measurements of scattering cross section from $90^{\circ}$ light scattering have been utilized to calculate the aggregate number density and volume fraction using with combination of measuring the particle size and morphology through the localized sampling and a TEM image analysis. Aggregate or particle number densities and volume fractions were calculated using Rayleigh-Debye-Gans and Mie theory for fractal aggregates and spherical particles, respectively. Of particular interests are the effects of flame temperature on the evolution of silica aggregate particles. As the flow rate of $H_2$ increases, the primary particle diameters of silica aggregates have been first decreased, but, further increase of $H_2$ flow rate causes the diameter of primary particles to increase and for sufficiently larger flow rates, the fractal aggregates finally become spherical particles. The variation of primary particle size along the upward jet centerline and the effect of burner configuration have also been studied.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.340-344
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• 2005

Microlens cells of Ge-doped BPSG (Boro-Phospho-Silicate Glass) are fabricated by dicing the film produced by FHD (Flame Hydrolysis Deposition). Microlens arrays of $53.4{\mu}m$ square unit are produced by the thermal reflow of the diced unit cells at $1200^{\circ}C$. The gap between the microlenses was about $70{\mu}m,$ and the thickness of the produced lens was about $28.4{\mu}m$. We analyzed the reflowed shape of the microlens cell by an image-process technique, and the focal length was about $62.2{\mu}m$. This method of fabricating a microlens is simple and inexpensive compared to the conventional method using the photolithographic process. Also, the control of the radius of curvature of the microlens is easier and a more precise microlens way of various types can be fabricated using this method.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.46-47
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• 2002

Flame Hydrolysis Deposition (FHD) 공정은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료를 사용하여 Si wafer 및 유리기판 위에 silicate soot를 증착하는 방법이며, 증착된 soot는 고온에서 소결과정을 거쳐 B$_2$O$_3$-P$_2$O$_{5}$ -GeO$_2$-SiO$_2$(BPGS)계 유리막으로 형성된다. 유리막의 굴절률은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료 유량을 조절하여 변화가능하며 이를 이용하여 광도파로를 제작할 수 있다 특히 광통신에 사용할 수 있는 광증폭기 등의 능동형 광소자 제작을 위해서는 FHD공정을 통해 형성된 soot에 Er$^{3+}$ 등의 희토류 원소를 첨가하여야 한다. (중략)

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.385-392
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• 2001

There have been many investigations and researches on PLC type of optical amplifiers because they are convenient for mass production and also can integrate multi-functional devices into a single chip. In this research. the fabrication of optical waveguide made of Si/$Sio_2$ by FHD(Flame Hydrolysis Deposition) for passive integrated optical devices and $1.5\mu\textrm{m}$ optical amplifier by Solution Doping method, which is one of the method doping $Er^{3+}$ into the thin film, are mainly discussed.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.337-344
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• 1998

화염가수분해증착법에 의해 형성된 $0.1\mu\textrm{m}$크기의 soot를 실리콘 기판위에 형성하여 $1325^{\circ}C$에서 2시간 동안 고밀화과정후 투명한 후막을 얻을 수 있었다. 고밀화 열처리는 탈수과정, 재배열 과정, 그리고 고밀화 과정으로 구성되었다. 고밀화 공정후의 두께 수축률은 초기 soot의 96%정도였으며, 급속한 두께의 감소는 $950^{\circ}C$부터 시작되었으며, 본격적인 고밀화가 시작되는 온도는 $1250^{\circ}C$임을 알 수 있었다. soot의 TGA와 DTA를 이용한 열분석 결과 탈수과정에 의하여 9/wt%의 질량감소와 $1250^{\circ}C$이상에서 인(P)의 증발에 의한 2wt%의 질량감소를 관찰하였다. DTA곡선에서는 $500^{\circ}C$, $570^{\circ}C$. $1258^{\circ}C$에서 흡열반응 피크를 나타내는데, 이는 $B_{2}$$O_{3}$, $P_{2}$$O_{5}$ 등의 도펀트들의 melting과 실리카 입자사이의 기공이 소멸되면서 입자간의 열전도도의 증가에 의해 나타난 것으로 판단된다.