• Title/Summary/Keyword: Fine patterning

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A High Aperture Mobile in the FFS TFT-LCD by the using Fine Patterning Process

  • Yun, Hee-Jung;Lim, Yun-Sik;Choi, Seung-Jin;Bin, Jin-Ho;Park, Jong-Kyun;Park, Min-Hwan;Lee, Yan-Ho;Ihm, Sam-Ho;Lim, Young-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.826-829
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    • 2006
  • In order to increase the transmittance of panel, in process of FFS TFT-LCD, fine patterning process which is adopted to the optimum passivation(PVX) hole was applied fine metal line patterning process and was made with optimum efficiency of liquid crystal by using space/bar size control of pixel electrode. We fabricated 2.03" mobile FFS devices with fine patterning process. Further, this technology will be applied to the basis of other process for higher PPI or higher aperture ratio technology.

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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
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    • v.7 no.3
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    • pp.1-4
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

Nano-Sized Phosphor by Reverse Emulsion Process and Precision Nozzle Phosphor Patterning

  • Park, Lee-Soon;Yoon, Hae-Sang;Han, Yoon-Soo;Im, Moo-Sik;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.536-539
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    • 2004
  • A novel ink-jet printing method was investigated for fine patterning of phosphor layer in PDP using a precision nozzle printing. A reverse emulsion method was developed for the synthesis of nano-sized phosphor powder that could be formulated in the phosphor ink. The composition of the phosphor ink including charge controlling agents, solvent, dispersant and nano-sized phosphor powder was optimized for the fine patterning of phosphor layer for high resolution PDP.

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High resolution patterning of polyfluorene derivative containing photo cross-linkable oxetane units

  • Park, Moo-Jin;Lee, Jeong-Ik;Chu, Hye-Yong;Kim, Seong-Hyun;Zyung, Taeh-Young;Hwang, Do-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1419-1420
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    • 2005
  • We have synthesized a photo patternable blue lightemitting polyfluorene (PF) derivative containing cross-linkable oxetane units. Poly(9,9-bis-(4-octyloxyphenyl)- fluorene-2,7-diyl-alt-9,9-bis-((3-hexyloxy-3'- ethyl)-oxetane)-fluorene-2,7-diyl) has been synthesized by Suzuki coupling polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope UV/visible spectroscopy, photoluminescence and scanning electron microscope (SEM). We obtained fine patterns with 10 mm resolution using the polymer film after exposure and development. This patterning method using conjugated polymers can be applicable to make fine pixels for PLEDs and OFETs.

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Photo-imageable Thick-Film Lithography Technology for Embedded Passives Fabrication (내장형 수동소자의 제조를 위한 포토 이미징 후막리소그라피 기술)

  • Lim, Jong-Woo;Kim, Hyo-Tea;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.303-303
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    • 2007
  • Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

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Inkjet patterning of Aqueous Silver Nano Sol on Interface-controlled ITO Glass

  • Ryu, Beyong-Hwan;Choi, Young-Min;Kong, Ki-Jeong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1552-1555
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    • 2005
  • We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared by variation of molecular weight and control of initial nucleation and growth of silver nanoparticles. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The fine line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

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A Study on Fabrication of La0.5Sr0.5CoO3Thin Films as an Electrode for Ferroelectric Memory by Self-patterning Technique (Self-patterning 기술을 이용한 강유전체 메모리 전극용La0.5Sr0.5CoO3박막의 제조에 관한 연구)

  • 손현수;김병호
    • Journal of the Korean Ceramic Society
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    • v.40 no.2
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    • pp.153-158
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    • 2003
  • Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

A Study on Fabrication of Photosensitive Sr0.9Bi2.1Ta2O9 Thin Film by Sol-gel Self-patterning Technique (Sol-gel Self-patterning 기술을 이용한 광감응성 Sr0.9Bi2.1Ta2O9 박막의 제조기술에 관한 연구)

  • Yang, Ki-Ho;Park, Tae-Ho;Lim, Tae-Young;Auh, Keon-Ho;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.750-757
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    • 2002
  • Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

Fabrication of the Printed Circuit Board by Direct Photosensitive Etch Resist Patterning (감광성 에칭 레지스트의 잉크젯 인쇄를 이용한 인쇄회로 기판 제작)

  • Park, Sung-Jun;Lee, Ro-Woon;Joung, Jae-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.5
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    • pp.97-103
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    • 2007
  • A novel selective metallization process to fabricate the fine conductive line based on inkjet printing has been investigated. Recently, Inkjet printing has been widely used in flat panel display, electronic circuits, biochips and bioMEMS because direct inkjet printing is an alternative and cost-effective technology for patterning and fabricating objects directly from design without masks. The photosensitive etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity at ambient temperature. A piezoelectric-driven inkjet printhead is used to dispense 20-30 ${\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. Repeatability of circuitry fabrication is closely related to the formation of steady droplets, adhesion between etching resist and copper substrate. Therefore, the ability to form small and stable droplets and surface topography of the copper surface and chemical attack must be taken into consideration for fine and precise patterns. In this study, factors affecting the pattern formation such as adhesion strength, etching mechanism, UV curing have been investigated. As a result, microscale copper patterns with tens of urn high have been fabricated.