• Title/Summary/Keyword: Film width

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Characteristics of Seedling Establishment and Yield of Platycodon grandiflorus by Ridge Width and Mulching Materials (이랑폭과 피복재에 따른 도라지의 입모율 및 수량특성)

  • Cho, Young-Son
    • Korean Journal of Medicinal Crop Science
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    • v.19 no.4
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    • pp.233-237
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    • 2011
  • This study was carried out to investigate the seedling establishment and yield of direct-sown Platycodon grandiflorus seeds cultured by three ridge width, 0.4, 0.8, and 1.2 m and four mulching materials, rice straw, rice bran, black plastic film, and no mulching in upland. Seedling establishment rate (70%) was the highest in rice straw mulched plot of 500 seeds/$m^2$ sowed and root yield after one year was also the highest in rice straw mulched treatment and followed by rice bran, no mulching, and black plastic film treatment. In this result, ridge width 120cm and rice straw mulching combined treatment was best for getting the highest seedling establishment ratio and seedling numbers per area. However, ridge width and mulching materials should be considered soil moisture content and weed population for saving labor cost.

3D Film Image Inspection Based on the Width of Optimized Height of Histogram (히스토그램의 최적 높이의 폭에 기반한 3차원 필름 영상 검사)

  • Jae-Eun Lee;Jong-Nam Kim
    • Journal of the Institute of Convergence Signal Processing
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    • v.23 no.2
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    • pp.107-114
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    • 2022
  • In order to classify 3D film images as right or wrong, it is necessary to detect the pattern in a 3D film image. However, if the contrast of the pixels in the 3D film image is low, it is not easy to classify as the right and wrong 3D film images because the pattern in the image might not be clear. In this paper, we propose a method of classifying 3D film images as right or wrong by comparing the width at a specific frequency of each histogram after obtaining the histogram. Since, it is classified using the width of the histogram, the analysis process is not complicated. From the experiment, the histograms of right and wrong 3D film images were distinctly different, and the proposed algorithm reflects these features, and showed that all 3D film images were accurately classified at a specific frequency of the histogram. The performance of the proposed algorithm was verified to be the best through the comparison test with the other methods such as image subtraction, otsu thresholding, canny edge detection, morphological geodesic active contour, and support vector machines, and it was shown that excellent classification accuracy could be obtained without detecting the patterns in 3D film images.

The Analysis of Transfer and Output characteristics by Stress in Polycrystalline Silicon Thin Film Transistor (다결정 실리콘 박막 트랜지스터에서 스트레스에 의한 출력과 전달특성 분석)

  • 정은식;안점영;이용재
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.145-148
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    • 2001
  • In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.

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Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric P(VDF-TrFE) Copolymer Film

  • Lee, Gwang-Geun;Park, Hyeong-Jin;Han, Hui-Seong;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.85-86
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    • 2007
  • A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

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Study on the Physical Property of Stretch Film for Wrapping of Roughage (조사료 래핑용 스트레치 필름의 물리적 특성에 관한 연구)

  • 이성현;장유섭;박원규;최광재;김종근
    • Journal of Animal Environmental Science
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    • v.5 no.2
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    • pp.79-86
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    • 1999
  • Recently more dairy farmers are interested in the utilization of stretch film for wrapping silage material. Most of stretch film are imported from abroad and one domestic product was developed, but its quality has not yet been tested. Therefore this study was executed to offer basic data on this material to the farmers. Measured items were tensile load, extension ratio, and tear propagation strength of stretch films. Comparisons were made among the white color of domestic product(Kw), and white(Fw), black (Fb) and green color(Fg) of foreign products. The result were summarized as follows: 1. Tensile loads of lengthwise direction in stretch films were 557.4, 377.4, 282.6 and 398.4kgf/$\textrm{cm}^2$ in Kw, Fw, Fb and Fg, respectively, and tensile loads of width direction were 415.9, 418.1, 360.2 and 433.0kgf/$\textrm{cm}^2$ in Kw, Fw, Fb and Fg, respectively. 2. Extension ratios of lengthwise direction were 650, 462.5, 512.5% and 537.5% in Kw, Fw, Fb and Fg, respectively, Extension ratios of width direction were 930, 962.5, 950 and 1,000% in Kw, Fw, Fb and Fg, respectively. 3 Tear propagation strength of lengthwise direction 187.9, 148.9, 157.3 and 142.8kgf/cm, and tear propagation strength of width direction were 141.4, 129.8, 140.4 and 106.6kgf/cm in Kw, Fw, Fb and Fg, respectively. 4. In the light transmittance, there was no difference between white and green color stretch film, but it was very low in black one. Therefore, it is thought that research on quality of roll bale silage treated with each stretch film would be needed.

Improvement of Film Cooling Performance of a Slot on a Flat Plate Using Coanda Effect (코안다 효과를 이용한 평판 슬롯의 막냉각 성능 향상)

  • Kim, Gi Mun;Kim, Ye Jee;Kwak, Jae Su
    • The KSFM Journal of Fluid Machinery
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    • v.20 no.2
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    • pp.5-10
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    • 2017
  • In this study, the Coanda effect inducing bump was applied to improve the film cooling effectiveness on the flat plate with $30^{\circ}$ and $45^{\circ}$ angled rectangular slots. The slot length to width ratio was 6. A cylindrical cap shaped structure, called Coanda bump, was installed at the exit of the slot to generate Coanda effect. The width and height of the bump was 10.5 mm and 1 mm, respectively. The film cooling effectiveness was measured at the fixed blowing ratio, M=2.0, using pressure sensitive paint (PSP) technique. The mainstream velocity was 10 m/s and the turbulence intensity was about 0.5%. Results showed that the film cooling effectiveness for case of $30^{\circ}$ angled slot was higher than that of $45^{\circ}$ angled slot. It was found that there was no positive effect of Coanda effect on the overall averaged film cooling effectiveness for the $30^{\circ}$ angled slot. On the other hand, for the $45^{\circ}$ angled slot, the film cooling effectiveness was improved with the installation of the Coanda bump.

Single-Crystal like MgB2 thin films grown on c-cut sapphire substrates

  • Duong, Pham Van;Ranot, Mahipal;Kang, Won Nam
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.3
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    • pp.7-9
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    • 2014
  • Single-crystal like $MgB_2$ thin film was grown on (000l) $Al_2O_3$ substrate by using hybrid physical-chemical vapor deposition (HPCVD) system. Single crystal properties were studied by X-ray diffraction (XRD) and the full width at half maximum (FWHM) of the (0001) $MgB_2$ peak is $15^{\circ}$, which is very close to that has been reported for $MgB_2$ single-crystal. It indicates that the crystalline quality of thin film is good. Temperature dependence on resistivity was investigated by physical property measurement system (PPMS) in various applied fields from 0 to 9 T. The upper critical field ($H_{c2}$) and irreversibility field ($H_{irr}$) were determined from PPMS data, and the estimated values are comparable with that of $MgB_2$ single-crystals. The thin film shows a high critical temperature ($T_c$) of 40.4 K with a sharp superconducting transition width of 0.2 K, and a high residual resistivity ratio (RRR=21), it reflects that $MgB_2$ thin film has a pure phase structure.

Analysis of Joule-heat Characteristics according to the DC-link Capacitor Film Geometrics (DC-link Capacitor필름 형상에 따른 Joule-heat특성 분석)

  • Jeon, Yong Won;Kim, Young Shin;Jeon, Euy Sik
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.42-48
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    • 2020
  • As global warming accelerates, eco-friendly electric cars are being developed to reduce carbon dioxide emissions, and power conversion inverters are used to drive motors. Among inverter components, DC-link capacitor is heated by high current usage, which causes problems such as performance and life-saving of inverter. Although metal cases with good thermal performance have been used to solve this problem, it is difficult to apply them in practice due to insulation problems with other parts. In this paper, the Heat-Generation influence factor of DC-link capacitor is analyzed. Variables on heat-generation are set at 3 levels for film width, inductance, and film thickness. Box-Behnken to 13 tests using the design and minimal deviations, e.g. through the experiment three times by each level. The surface of the film k type by attaching the sensor current is measured temperature. Capacitance was set to a minimum level of 200 ㎌ and had a frequency of 16 kHz with Worst case, ambient temperature of 85℃ and a ripple current of 50 Ams was applied. The temperature at the measurement point was collected in the data logger after sampling at 1 minute intervals for 2 hours after saturation with the ambient temperature. This experiment confirmed that setup factors are correlated with heat-generation.

Metallizations and Electrical Characterizations of Low Resistivity Electrodes(Al, Ta, Cr) in the Amorphous Silicon Thin Film Transistor (비정질 실리콘 박막 트랜지스터 소자 특성 향상을 위한 저 저항 금속 박막 전극의 형성 및 전기적 저항 특성 평가)

  • Kim, Hyung-Taek
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.05a
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    • pp.96-99
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    • 1993
  • Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

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Characteristics of spiral type thin film inductors for the frequency (나선형 박막 인덕터의 주파수 특성)

  • Park, Dae-Jin;Min, Bok-Ki;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.890-893
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    • 2004
  • In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

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