• 한국재료학회지
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• 제3권1호
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• pp.3-6
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• 1993

Gd박막의 강자성-상자성 상전이 온도(Tc)이동을 조사했다. 강자성-상자성 상전이 온도에서 전기저항이 변화되는 변곡점을 관측하여 Tc를 결졍하였는데, 두께가 6600$\AA$인 Gd박막의 상전이 온도는 bulk상태의 Gd의 전이온도보다 4$\pm$0.$3^{\circ}C$정도 아래로 이동됨을 알았다. 이것은 강자성 Gd박막의 Tc이동에 대한 최초의 측정이며, 실험과 finite-sime scaling이론을 비교 분석했다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1344-1347
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• 2004

Recently, Study on measuring property of a micro thin film(nm ～ hundreds of ) under Thermal Mechanical loading. In this work, We perform tensile test at high temperature(1200 ) to investigate mechanical properties of alumina TGO formed under Thermal Barrier Coating. We used Digital Image Correlation method for measuring displacement, and We presented a method of tensile test for thin film at high temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1603-1606
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• 2007

The TPS (Temperature Programmed Sublimation) technology has been developed to monitor the plane evaporation of the organic films and introduced in SID2007, P53.[4] The Alq3 organic film is deposited on various metal surface such as Cu, Ti, Invar, STS to sublimate. The TPS signal confirms that the Alq3 film consists of nano scale film phase and bulk phase on all the metal plates. The sublimation temperature of the Alq3 film was much lower ($130^{\circ}C$) than the vapor temperature ($265^{\circ}$) of the Alq3 powder.

• Tribology and Lubricants
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• 제11권1호
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• pp.12-19
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• 1995

A finite element approach to analyzing the film pressure of engine bearings has been presented based on the viscosity-temperature equations. The calculated results from each viscosity model are compared with each other for various temperature models of the oil film. The FEM results show that the appropriate selection of the viscosity-temperature model is very important factor for analyzing the film pressure distribution of engine bearings.

• 한국진공학회지
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• 제1권1호
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• 접착 및 계면
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• 제5권2호
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• pp.1-7
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• 2004

A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.113-118
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• 2000

Experimental results describing the effects of blowing ratio on film cooling from two rows of holes with opposite orientation angles are presented. The inclination angle was fixed at $35^{\circ}$ and the orientation angles were set to be $45^{\circ}$ for downstream row. and $-45^{\circ}$ for upsream row. The studied blowing ratios were 0.5, 1.0 and 2.0. The boundary layer temperature distributions were measured using thermocouple at two downstream loundary layer temperature distributions were measured using thermocouple at two downstream locations. Detailed adiabatic film cooling effectiveness and heat transfer coefficient distributions were measured with TLC(Thermochromic Liquid Crystal). The adiabatic film cooling effectiveness and heat transfer coefficient distributions are discussed in connection with the injectant behaviors inferred from the boundary layer temperature distributions. Film cooling performance, represented by heat flux was calculated with the adiabatic film cooling effectiveness and heat transfer coefficient data.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.500-504
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• 2020

Heating films were prepared with composites of poly (methyl methacrylate) and conductive graphite. The as-prepared composite was deposited on a PET film and then fabricated using a bar coater to produce a film with uniform thickness. Copper electrodes were attached to both ends of the as-prepared film, and the heating characteristics of the film were analyzed while applying a DC voltage. The electrical conductivity and heating temperature of the heating films depended on the size, structure, content, and the dispersion characteristics of the graphite in the composite. The thermal energy was adjusted by controlling the electrical energy, based on the Joule heating theory. The electrical resistance of the film was altered in proportion to Ohm's law, and the heating temperature was changed according to the structure of the film (interelectrode spacing or electrode length) and the conductive graphite content. When the content of conductive graphite in the film increases, the electrical resistance decreases, and the heating temperature increases; however, there is no significant change above a certain content (50%).

• 한국표면공학회지
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• 제32권1호
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• pp.3-9
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• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.