• 한국표면공학회지
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• 제53권1호
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• pp.1-8
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• 2020

Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl₂ concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl₂ concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl₂ concentration from 0 to 0.210 M CoCl₂ in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl₂ concentration. Nodular surface morphologies were observed at most CoCl₂ concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl₂ concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl₂ concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl₂ concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl₂ concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.

• 폴리머
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• 제24권1호
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• pp.90-96
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• 2000

고분자 정공 전달체로 LB 기법에 의해 제조한 PDPMA 초박막과 발광층으로 Alq$_3$를 사용하여 유기 발광소자를 제작하였다. 표면활성제로 arachidic acid를 사용하여 안정한 PDPMA 단분자막을 얻을 수 있었다. PDPMA LB 필름의 두께와 320nm의 최대 흡광도는 층수의 증가에 따라 거의 선형적으로 증가하였다. ITO/PDPMA LB 필름(19층)/Alq$_3$/Al으로 구성된 유기 적층형 소자는 DC 14V에서 2500 cd/m$^2$의 높은 휘도를 갖는 녹색 빛을 발광하였다. 특히 PDPMA LB 필름의 층이 15로 이루어진 발광소자의 구동전압은 4V의 매우 낮은 값을 나타내었다. PDPMA LB 필름의 두께 조절 및 분자 배향에 따른 EL 성능에 미치는 영향에 관하여도 검토하였다.

• 한국세라믹학회지
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• 제36권4호
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• pp.403-409
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• 1999

RF 마그네트론 스퍼터링방법으로 Pt/Ti/NON/Si 기판 위에 $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) 박막을 증착한 다음 유전 및 초전특성을 살펴보았다. BST 박막을 증착할 때 기판온도를 300~-$600^{\circ}C$로 변화시킨 결과 기판온도가 증가할수록 박막의 결정성과 입도가 증가하여 유전율과 초전계수가 증가하였다. 한편 하부전극인 Pt의 증착조건이 BST 박막의 몰성에 미치는 영향도 살펴보았다. Pt의 증착온도와 Pt의 미세구조와 결정성뿐만 아니라 상부에 형성된 BST 박막의 배향성에도 큰 영향을 미쳤으며, 그 결과 BST의 초전특성에도 큰 영향을 미쳤다. BST 박막과 Pt 하부전극의 증착조건을 적정화함으로써 본 연구에엇는 상온에서 초전계수가 240 $nCcm^{-2}K^{-1}$인 BST 박막을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• 한국재료학회지
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• 제22권4호
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 대한기계학회논문집A
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• 제23권6호
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• pp.1048-1054
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• 1999

It is important to study the shielding effectiveness(SE) of reinforcing material of plastic composite materials against the electromagnetic(EM) waves. In this paper, SE of the shielding material of EM waves was investigated with actual experiments. The materials used in this study were made up of film, fiber and powder of conductive materials - Cu, Al, CF etc. Also, The resin film was used as matrix. The experiment was carried out by using a shielding evaluator(Shielding box) TR17302 with an ADVANTEST spectrum analyzer, model R3361C. It was found from the experimental results that copper, aluminum and carbon fiber were good candidates as a shielding material against the EM waves with increasing the SE as the composite was laminated. The characteristics of the SE against the EM waves depended on a mode of preparation of specimen. The effects of interval of wires on the SE were studied when the orientation and the space of Cu wires were changed. The SE strongly depended on the. orientation and the space of the Cu wire. SE decreased as the space of the Cu wires was increasing.

• 한국재료학회지
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• 제4권4호
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• pp.385-392
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• 1994

Microwave플라즈마 화학 증착법으로 다이아몬드 박막을 증착하여 morphology변화를 관찰하였다. 기판 온도가 $550^{\circ}C$에서 $750^{\circ}C$로 증가함에 따라 다이아몬드 박막의 표면 morpholoty는 {111}에서 {100}, cauliflower형태로 변화하는 것과 함께, 증착층내의 nondiamond성분이 증가하는 것을 발견하였다. 증착 층 내에 존재하는 nondiamond성분은 다이아몬드 입자의 입계에 분포하고 있음을 마이크로 Raman분석으로부터 추측할 수 있었다. 증착층의 texture orientation 을 X-선 회절 분석기로 확인한 결과, $550^{\circ}C$에서는 증착층의 texture orientation이 관찰되지 않았지만 온도가 증가함에 따라 <100>에서 <110>으로 변화하는 것을 관찰할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1397-1399
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• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권8호
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.617-624
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• 2000

Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron reactive sputtering. The charcteristics of ZnO thin films on argon/oxygen(Ar/O$_2$)gas ratios RF power and substrate temperature were investigated by XRD, SEM, and AFM analyses. C-axis preferred orientation resistivity and surface roughness highly depended on Ar/O$_2$gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of 9$\times$10$^{7}$ $\Omega$cm was obtained at a working pressure of 10 mTorr with Ar/O$_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/O$_2$=50/50 showed the excellent roughness value of 28.7$\AA$.