• Journal of The Korean Society of Grassland and Forage Science
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• v.21 no.2
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• pp.75-80
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• 2001

This experiment was carried out to determine the effect of storing method and wrapping frequency on the quality of round baled rice straw silage at experimental field of Grassland and Forage Crops Division, National Livestock Research Institute, RDA, Suwon fro 1999 to 2000. Storing methods consisted of erect and lay type, and wrapping frequencies were composed to 2, 4, 6, 8 and 10 film layers. there were no significant difference in feed value between storing methods, but acidity of lay type was significantly higher than that of erect type. According to the wrapping frequency, crude protein(CP) content of 2 film layers treatment was lowest during 6 month storing periods, and that of 4 film layers treatment was lowest during 10 month storing periods. The two film layers treatment which was stored for 10 month was impossible for ruminant to feed it, because it was rotten severely. Storing for 6 month, 2 film layers treatment represented highest pH value by 8.23 and storing for 10 month, 4 film layers treatment showed highest pH value by 7.17. Most of silage ranked grade 3 in quality grade. According to this experiment, it was recommended that application of round bale silage system to fresh rice straw should wrap above 4 film layers for 6 month, and above 6 film layers for 10 month storing periods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1026-1029
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• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• Journal of The Korean Society of Grassland and Forage Science
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• v.38 no.1
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• pp.1-6
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• 2018

This study was conducted to investigate the feed value and silage quality according to storage period and film layers in whole crop oat silage. The crude protein content was increased in all silage during the storage periods compared to those before silage, under prolonged storage period slightly and the number of film layers of silage, six layer were higher than four layers, but no significant. NDF and ADF contents were also increased in all silage of storage duration compared to those before silage, but they was similar level between storage duration and number of film layers. TDN content was decreased of the storage duration. However, it was similar under the storage duration and the number of film layers. The pH value was decreased during prolonged storage period and six layers was lower than four layers depending on the film layers. In the organic acid contents, lactic acid and acetic acid were increased under the prolonged storage duration, and butyric acid was higher significantly(p<0.05), six layers of the film were showed higher lactic acid and lower butyric acid(p<0.05). Therefore, oat silage should be used within 6 months it was when treated with 4 layers, if considering the long-term storage, it is desirable to treat it with 6 layers or more.

• Journal of Biosystems Engineering
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• v.42 no.3
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• pp.136-146
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• 2017

Purpose: This paper presents an appropriate wrapping method by analyzing the pressure distribution applied to a bale surface, along with the change in pressure according to an increase in the number of film layers in rice straw bales, which account for 74% of the total bulky feed supply in Korea. Methods: A model with the shape of an actual bale was fabricated to analyze the distribution of surface pressure in bale wrapping, and the pressure was measured. Experiments were conducted to analyze the pressure using eight different layer numbers (2, 4, 6, 8 10, 12, 14, and 16 layers) at five wrapping speeds (27, 29, 31, 33, and 35 rpm). Results: The maximum pressure applied to a circular bale by the film occurred at the center of the end of the bale, whereas the minimum pressure occurred at the center of the bale side. An extreme value ratio between the minimum and maximum pressures was distributed as 8.5-56.6%, which was improved with an increase in rotation speed. The an uneven pressure distribution occurred because the number of film overlaps was 8.24-times greater at the center of the bale's end than at the center of the ba le side. At a level 5 rotation speed, the minimum pressure was $P_{LV5-M1}=0.0625{\sigma}^2+36.173{\sigma}-36.753$ ($R^2=0.9845$) at $M_1$, and the maximum pressure was $P_{LV5-M6}=5.5552{\sigma}^2+41.05{\sigma}-39.071$ at $M_2$, revealing a correlation of $R^2=0.9983$. Conclusions: To replace four layers with six layers, 2-4 layers were added only to the side of the bale, and the minimum pressure at $M_1$ was then improved from that at four layers to that at six layers, and the amount of film consumed for 4-6 layers was reduced by 84.6%.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• Journal of The Korean Society of Grassland and Forage Science
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• v.35 no.1
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• pp.6-11
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• 2015

This study was undertaken to characterize feed value and silage quality according to storage period and film layers for whole-crop barley silage. The crude protein (CP) content increased in all silage during the storage periods compared to those before silage, this content slightly increased over the prolonged storage period but it was not significant (p>0.05). Depending on the film layers of silage, 6 layers were higher than 4 layers. The neutral detergent fiber (NDF) and acid detergent fiber (ADF) contents also increased in all silage during storage periods compared to those before silage (P<0.05), but they were maintained at similar levels during the storage period. Depending on the film layers of silage, 6 layers were higher than 4 layers. The total digestible nutrients (TDN) content decreased in all silage during the storage periods. However, it was maintained at a similar level for the duration of each storage period. Depending on the film layers of silage, 6 layers were lower than 4 layers. The pH value was decreased during the prolonged storage period and depending on the film layers, 6 layers were lower than 4 layers. In the organic acid contents during the prolonged storage period, lactic acid increased, acetic acid was lower, and butyric acid was significantly higher (p<0.05). Depending on the film layers, 6 layers showed higher levels of lactic acid and lower levels of butyric acid (p<0.05). Therefore, these results showed that 6 layer wrapping was advantageous for long term storage of whole crop barley silage, while also indicating that it is desirable to use 4 layer wrapping within a six month period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Journal of Mechanical Science and Technology
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• v.19 no.5
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• pp.1065-1071
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• 2005

In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element method (FEM). We evelop a finite element program for residual stress analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multi­stacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA, mean stresses and stress gradients of single and multi layers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney's equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the left film after etching layer by layer in multi-stacked film.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.92-95
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• 1997

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductivity, diamond-like carbon (DLC) film is a suitable material for the passivation layers. For this purpose, using the PECVD, DLC films were synthesized at room temperature. The adhesion and the hardness of the DLC films deposited on Si an SiO2 substrate were measured. The resistivity of 5.3$\times$$10^8$$\Omega$.cm was measured by automatic spreading resistance probe analysis method. The thermal conductivities of different DLC films were measured and compared with that of phospho silicate glass (PSG) film which is commonly used as passivation layers. The thermal conductivity of DLC film was improved by increasing hydrogen flow rate up to 90 sccm and was better than that of PSG film. The patterning techniques of the DLC film developed using the RIE and the lift-off method to form 5$\mu\textrm{m}$ line. Finally, the thermal characteristics of the power transistor with the DLC film as passiviation layer was analyzed.