• ETRI Journal
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• v.31 no.1
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.303-303
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• 2007

Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.11
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• pp.1485-1495
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• 1997

The present study investigates heat/mass transfer around film cooling jets and circular cylinders to compare the characteristics of each other. Experiments are conducted to obtain the detailed heat/mass transfer coefficients of flat plate with injections through an array of holes and for flows around an array of protruding circular cylinders using the naphthalene sublimation technique. The inclination angles of cylinders are set to the same ones of jets; a, the angle between the jet and the surface is fixed at 30 deg. through the whole experiments and .betha., the angle between the projection of the jet on the surface and the direction of main stream is adjusted to 0 deg., 45 deg. and 90 deg. to investigate the effect of variation of injection angles. The influence of blowing rates of jets and those of cylinder length to diameter ratios are also investigated. The results indicate that the increase of angle .betha. influences the spanwise uniformity of heat/mass transfer remarkably for both jets and cylinders, but that variation of cylinder length to diameter ratios has weaker effects on heat/mass transfer coefficients than that of blowing rates.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.6
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• pp.870-879
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• 2000

An experimental investigation is conducted to improve a slot film cooling system which can be used for the cooling of gas turbine combustor liner. The tangential slots are constructed of discrete holes with different injection types which are the parallel, vertical, and combined to the slot lip. The investigation is focused on the coolant supply systems of normal-, parallel-, and counter-flow paths to the mainstream direction. A naphthalene sublimation technique has been employed to measure the local heat/mass transfer coefficients in a slot with various injection types and coolant feeding directions. The velocity distributions at the exit of slot lip for the parallel and vertical injection types are fairly uniform with mild periodical patterns with respect to the hole positions. However, the combined injection type increases the nonuniformity of flow distribution with the period equaling twice that of hole-to-hole pitch due to splitting and merging of the ejected flows. The secondary flow at the lip exit has uniform velocity distributions for the parallel and vertical injection types, which are similar to the results of a two-dimensional slot injection. In the results of local heat/mass transfer coefficient, the best cooling performance inside the slot is obtained with the vertical injection type among the three different injection types due to the effect of jet impingement. The lateral distributions of Sh with the parallel- and counter-flow paths are more uniform than the normal flow path. The averaged Sh with the injection holes are $2{\sim}5$ times higher than that of a smooth two-dimensional slot path.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.3
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• pp.341-351
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• 2016

In this present work, the effect of hole shapes, orientation and hole arrangements on film cooling effectiveness has been carried out. For this work a flat plate has been considered for the computational model. Computational analysis of film cooling effectiveness using different hole shapes with no streamwise inclination has been carried out. Initially, the model with an inclination of $30^{\circ}$ has been verified with the experimental data. The validation results are well in agreement with the results taken from literature. Five different hole shapes viz. Cylindrical, Elliptic, Triangular, Semi-Cylindrical and Semi-Elliptic have been compared and validated over a wide range of blowing ratios. The blowing ratios ranged from 0.67 to 1.67. Later, orientation of holes have also been varied along with the number of rows and hole arrangements in rows. The performance of film cooling scheme has been given in terms of centerline and laterally averaged adiabatic effectiveness. Semi-elliptic hole utilizes half of the mass flow as in other hole shapes and gives nominal values of effectiveness. The triangular hole geometry shows higher values of effectiveness than other hole geometries. But when compared on the basis of effectiveness and coolant mass consumption, Semi-elliptic hole came out to give best results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.64-69
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• 2000

This paper investigates the equeeze film damping of a perforated planar micromechanical structure that oscillates in the normal direction to the substrate. Special focus has been places on the effect of holes and edges of the perforated planar microstructures on the squeeze film damping of oscillatory motions. Theoretical models and test structures of the squeeze film damping have been developed for the transversely oscillating perforated plates. A set of nine different test structures, having three different sized with three different numbers of perforations, has been fabricated and tested. The experimental Q-factors, measured from the fabricated test structures, are compared with the theoretical values, estimated from finite element analysis. It is found that the finite element analysis overestimates the Q-factors up to 150% of the experimental values. Major discrepancy comes from the inaccuracy of the zero pressure condition, placed by the finite element analysis along the perforated edges.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.