• 반도체디스플레이기술학회지
• /
• 제2권4호
• /
• pp.31-35
• /
• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 센서학회지
• /
• 제16권2호
• /
• pp.159-164
• /
• 2007

Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.

• 한국정보통신학회논문지
• /
• 제6권2호
• /
• pp.315-322
• /
• 2002

반도체 제조공정과 미세가공 기술을 이용하여 30$0^{\circ}C$의 동작온도에서 약 60㎽의 전력소모를 갖는 산화물 반도체 박막 가스센서 어레이를 제조하였다. 멤브레인의 우수한 열적 절연은 0.1$\mu\textrm{m}$ 두께의 Si$_3$N$_4$와 1$\mu\textrm{m}$ 두께의 PSG의 이중 층에 의한 것으로, 각각 LPCVD(저압화학 기상증착)와 APCVD(대기압 화학 기상증착)에 의해 제조되었다. 센서 어레이의 4가지 산화물 반도체 박막 감지물질로는 1wt.%Pd가 도핑된 SnO$_2$, 6wt.% $Al_2$O$_3$가 도핑된 ZnO, WO$_3$, ZnO를 이용하였으며, 제조된 초소형 산화물 반도체 박막 가스센서 어레이는 여러 가지 가스의 노출시 유용한 저항 변화를 나타내었고 감도는 감지 물질에 강하게 의존함을 알 수 있었다. 센서 소자의 공정 수율을 증진시키기 위하여 히터 부위를 함몰하는 공정 방법을 취하였으며, 그 결과 월등한 수율 개선을 도모할 수 있었다.

• 한국재료학회지
• /
• 제19권5호
• /
• pp.245-252
• /
• 2009

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glass substrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a high transmittance of above 80% in the visible range and a low electrical resistivity of $4.5{\times}10^{-4}{\Omega}{\cdot}cm$. The surface morphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature, working pressure, and etching time in the etching process. The optimized surface morphology with a crater shape is obtained at a heater temperature of $350^{\circ}C$, working pressure of 0.5 mtorr, and etching time of 45 seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) are significantly affected by the resulting surface morphologies of textured films. The film surfaces, having uniformly size-distributed craters, represent good light scattering properties of high haze and ADF values. Compared with commercial Asahi U ($SnO_2$:F) substrates, the suitability of textured ZnO:Al films as front electrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical and optical properties.

• 공업화학
• /
• 제20권6호
• /
• pp.692-695
• /
• 2009

바닥의 전기난방 장치로 사용할 수 있는 오믹 줄 방전 현상을 이용하는 면상발열체 전극기술을 개발하였다. Super pure black의 탄소재료와 polyvinylidene fluoride의 고분자 재료를 이용하여 제조한 복합 전극 합제를 PET에 박막 도포하여 전극을 제조하였다. 전극에 대한 조성 첨가제로서 multi-walled carbon nanotube와 연옥 분말을 사용하였다. 개발한 면상발열체 전극의 비저항과 전극의 접착강도 및 전극의 강도에 대하여 연구하였다. 연옥 분말의 첨가는 비저항과 강도에 미치는 영향이 적었으며, carbon nanotube의 첨가는 전극의 비전도도와 경도를 향상하였다. 다양한 조성의 오믹 줄 방전 전극의 특성을 연구하였다.

• 한국재료학회지
• /
• 제33권11호
• /
• pp.497-501
• /
• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2006년도 춘계학술발표논문집
• /
• pp.203-206
• /
• 2006

The sensor consists of a heater, an insulating layer, a pair of contact electrodes, and CNT-sensing film on a micromachined diaphragm. The heater plays a role in the temperature change to modify sensor operation. Gas sensor responses of CNT-film to $NO_2$ at room temperature are reported. The sensor exhibits a reversible response with a time constant of a few minutes at thermal treatment temperature of $130^{\circ}C$.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2006년도 춘계학술발표논문집
• /
• pp.223-226
• /
• 2006

The micro-gas sensor based on carbon nanotubes (CNTs) was fabricated and its gas sensing characteristics on nitrogen dioxide ($NO_2$) have been investigated. The sensor consists of a heater, an insulating layer, a pair of contact electrodes, and CNT-sensing film on a micromachined diaphragm. The heater plays a role in the temperature change to modify sensor operation. Gas sensor responses of CNT-film to $NO_2$ at room temperature are reported. The sensor exhibits a reversible response with a time constant of a few minutes at thermal treatment temperature of $130^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권1호
• /
• pp.38-44
• /
• 2005

Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.

• 대한기계학회논문집B
• /
• 제25권7호
• /
• pp.975-980
• /
• 2001

The thermal analysis of the hot roller in a dry film laminator is studied numerically by steady-state two-dimensional heat transfer. In the laminating process for PDP glass or PCB, the temperature distributions in a hot roller are presented considering the effects of the roller rotation speed and the inner and outer radii of the roller. The results show that the temperature distributions are strongly dependent on Peclet number. If Pe number becomes larger, the iso-thermal lines are more concentric about the rotating axis and the temperature difference on the hot roller surface decreases exponentially. It also shows that if the contact angle between the roller and the film becomes smaller the temperature difference becomes smaller. However, the changes of the rollers inner or outer radius have little effect on the temperature difference.