• Title/Summary/Keyword: Film formation

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A Study on the Film-Formation Mechanism by Ionized Cluster Beam Deposition (이온화 클러스터 빔 증착의 박막 형성 기구에 관한 연구)

  • Shin, C.B.;Lee, K.H.;Hwang, G.S.;Moon, S.H.;Cho, W.I.;Yun, K.S.
    • Applied Chemistry for Engineering
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    • v.7 no.3
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    • pp.464-472
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    • 1996

  • The mechanism of thin-film formation by Ionized Cluster Beam Deposition(ICBD) was investigated. A simulation program based on the Monte-Carlo method was developed in order to investigate the effects of the acceleration voltage, substrate temperature, activation energy for the surface migration, and critical nuclei size on grain size and surface roughness. Studies of the effect of kinetic energy of clusters on the film formation processes revealed that high acceleration voltage enhanced the surface-migration of adatoms and made it easier for an epitaxial film to be formed. The relaxation time of kinetic energy of adatoms increased with the substrate temperature, which in turn increased the grain size of the crystalline film. This effect was more clearly distinguished when the critical nuclei size was large. The surface-migration activation energy was found to affect the interaction between the adatoms and the substrate and thus the relaxation time of kinetic energy. Investigations of the surface roughness revealed that the acceleration voltage, the substrate temperature, and the surface-migration activation energy exerted a collective effect on the morphology of the film surface.

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