• Title/Summary/Keyword: Film formation

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Effect of nitrogen doping on properties of plasma polymerized poly (ethylene glycol) film

  • Javid, Amjed;Long, Wen;Lee, Joon S.;Kim, Jay B.;Sahu, B.B.;Jin, Su B.;Han, Jeon G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.286-288
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    • 2014
  • This study deals with the catalyst free radio frequency plasma assisted polymerization of ethylene glycol using nitrogen as reactive gas to modify the surface chemistry and morphology. The deposited film was characterized through various analysis techniques i.e. surface profilometry, Forier transform infrared spectroscopy, water contact angle and UV-visible spectroscopy to analyze film thickness, chemical structure, surface energy and optical properties respectively. The surface topography was analyzed by Atomic force microscopy. It was observed that the ethylene oxide behaviour and optical transmittance of the film were reduced with the introduction of nitrogen gas due to higher fragmentation of monomer. However the hydrophilic behavior of the film improved due to formation of new water loving functional groups suitable for biomedical applications.

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Effects of Electrolyte Concentration and Relative Cathode Electrode Area Sizes in Titania Film Formation by Micro-Arc Oxidation

  • Lee, Yong-K.;Lee, Kang-Soo
    • Corrosion Science and Technology
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    • v.9 no.4
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    • pp.171-174
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    • 2010
  • MAO (micro-arc oxidation) is an eco-friendly convenient and effective technology to deposit high-quality oxide coatings on the surfaces of Ti, Al, Mg and their alloys. The roles of the electrolyte concentration and relative cathode electrode area sizes in the grown oxide film during titanium MAO were investigated. The higher the concentration of the electrolyte, the lower the $R_{total}A$ value. The oxide film produced by the lower concentration of the electrolyte is thinner and less uniform than the film by the higher concentration, which is thick and porous. The cathode area size must be bigger than the anode area size in order to minimize the voltage drop across the cathode. The ratio of the cathode area size to the anode area size must be bigger than 8. Otherwise, the cathode will be another source for voltage drop, which is detrimental to and slows down the oxide growth.

Effects of structure and morphology of anodized Al thin film on magnetic properties (알루미늄 양극산화 피막의 구조 및 형상이 자기적 특성에 미치는 영향)

  • 권용덕;박용수
    • Journal of the Korean institute of surface engineering
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    • v.26 no.2
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    • pp.45-54
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    • 1993
  • In this study, magnetic properties of anodized Al film deposited with ferro-magnetic metals in the capacity of perpendicular magnetic recording media were measured and evaluated to find out the role of structure and morphology of the oxide films on magnetic characteristics. The object of this work was to present the conditions of magnetic thin film formation with more superior magnetic property. Anodizing was carried out under various conditions, and then the anodized film were electro-deposited with Co, Ni, Fe and their alloys. Coercive force and residual magnetization in perpendicular direction increased as the pore length of anodized film increased. It was attributed to the increase of the amount of depoisted metals and the ratio of length/diameter of pores. Morphology of anodized films in phosperic acid was not similar to that of sulfuric acid, and thin films in the former solution had perpendcular magnetic anisostropy because of large diameter, irregular length and distribution of the pores. It was found that magnetic properties of the thin films, which had doubled layer of two metals, were dominated by the metal electrodeposited on the surface of the anodized oxide films.

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Holographic Grating Formation of Amorphous AsSeS Thin Film (비정질 AsSeS 박막의 홀로그래픽 데이터 격자형성)

  • Ju, Long-Yun;Lee, Song-Hee;Nam, Ki-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.447-448
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    • 2008
  • In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The film thickness was 0.5um and diffraction efficiency was obtained from (P:P) polarized He-Ne (632.8nm)laser beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

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Formation of ultra-thin $Ta_{2}O_{5}$ film on thermal silicon nitrides (열적 성장된 실리콘 질화막위에 산화 탄탈륨 초박막의 형성)

  • 이재성;류창명;강신원;이정희;이용현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.11
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    • pp.35-43
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    • 1995
  • To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

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ION BEAM AND ITS APPLICATIONS

  • Koh, S.K.;Choi, S.C.;Kim, K.H.;Cho, J.S.;Choi, W.K.;Yoon, Y.S.;Jung, H.J.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.110-114
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    • 1997
  • Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

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Analysis on the Friction Characteristics of Low Viscosity Engine Oils (저점도 엔진오일이 마찰특성에 미치는 영향에 관한 해석적 연구)

  • Kim, Chung-Kyun
    • Tribology and Lubricants
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    • v.21 no.6
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    • pp.249-255
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    • 2005
  • In this paper, the friction characteristic of engine bearings has been analyzed in terms of a friction loss power, a minimum film thickness and an oil film pressure. This analysis has been focused on the fuel economy improvement with a low viscosity engine oil such as SAE 0W-40, which is used for a friction loss reduction and increased for a Diesel fuel economy. The friction loss power, the minimum oil film thickness and oil film pressure distribution for plain bearings of a Diesel engine are analyzed using an AVL's EXCITE program with a conventional engine oils of SAE 5W-40 and 10W-40, and a low viscosity engine oil of SAE 0W-40. The computed results indicate that a viscosity of engine oils is closely related to the friction loss power and the decreased minimum film thickness in which is a key parameter of a load carrying capacity of an oil film pressure distribution. When the low viscosity engine oil is supplied to engine bearings, it does not affect to the formation of a minimum oil film thickness. But the friction loss power has been significantly affected by low viscosity engine oil at a low operating temperature of 0. Based on the FEM computed results, the low viscosity engine oil at a low temperature range will be an important factor for an improvement of the fuel economy improvement.

Effect of plasma polymerized film on fouling of heat exchangers

  • Kim, Ki-Hwan;Park, Sung-Chang;doo-Jin choi;Jung, Hyung-Jin;Ha, Sam-Chul;Kim, Chul-Hwan;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.160-160
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    • 1999
  • To reduce the fouling of heat exchangers, the plasma polymerized films was coated on the heat exchangers, and an effect of plasma polymerized film on fouling of heat exchangers was investigated. Monomer and reactive gases were used as the precursors of plasma polymerization. Plasma polymerized films were deposited with process parameters of pressure, power, and ratio of gases. Plasma polymerized films could be served as functional layers of good wettability and high resistance to corrosion. Wettability of plasma polymerized film could be controlled by the ratio change gas mixture. Hydrophilicity of plasma polymerized films on heat exchanger in air conditioner can provide improvement in performance of heat exchanger which results from good water drainage, decrease of pressure drop. DC-plasma polymerized films improve resistance to corrosion whcih is related to deposit formation in heat exchangers. The difference in the build up of fouling deposits between bare substrate and plasma polymerized substrate was investigated by scanning electron microscopy (SEM). An effect of plasma polymerized film on fouling of heat exchangers was discussed in terms of surface properties such as wettability, surface chemical state.

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A Study on the Image and Surface Structure analysisthat Manufacture by LB Method of LB Thin Film (LB박막의 이미지와 표면구조분석에 관한 연구)

  • Song, Jin-Won;Lee, Kyung-Sup;Choi, Young-Il;Chung, Hun-Sang;Gu, Hal-Bon;Kim, Young-Keun;Lee, Young-Gil
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1618-1620
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    • 2002
  • Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

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a-Si:H Photodiode Using Alumina Thin Film Barrier

  • Hur Chang-Wu;Dimitrijev Sima
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.179-183
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    • 2005
  • A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.