• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.540-544
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• 1991

Thin film being formed on the surface of cobalt in the early stage of electrochemically induced passivation was studied by the three-parameter ellipsometry. The growth of the passive film was complete in a few seconds from the onset of the passivating potential, and was followed by a slight decrease in the thickness in 4-40 seconds. The optical constants of the passive film changed gradually during the changes in the thickness. The thickness and the optical properties at the steady state of passivation depended on the potential of the electrode. From the coulometric data and the optical properties, the composition of the passive films was deduced to be close to those of CoO, ${Co_3}{O_4}$ and ${Co_2}{O_3}$ depending on the potential. Cathodic reduction in the presence of EDTA was found to be an efficient way to obtain film-free reference surface of cobalt.

• Applied Chemistry for Engineering
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• v.29 no.5
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• pp.620-625
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• 2018

Liquid detergent based on sodium lauryl ethoxy sulfate (SLES) as main ingredient sometimes met gelling film on the surface when it is opened in the air. It was assumed because of the change of phase diagram of micelle by concentration change of surfactant, major ingredient of detergent when the water of detergent is evaporated. SLES showed strong hexagonal liquid crystal (LC) in 30~60 wt%, and lamellar LC over 60 wt%. In this research surface gelling formation of liquid detergent which is based on SLES as main ingredient was because of water evaporation. As water of detergent was evaporated, concentration of surfactant became higher. It was checked that surface gelling was LC of mixed surfactant system. Conclusionally we applied alpha olefin sulfonate (AOS) having good solubility, Sodium secondary alkane sulfonate (SAS) preventing hexagonal LC and hydrotrope sodium xylene sulfonate (SXS) and PEG1500 in order to prevent gelling film in SLES based liquid detergent. Like this, improved formula 4 and 5 can prevent the formation of gelling film on the surface of liquid detergent when it is opened in the air.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.46-53
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• 2016

The structure of plasma electrolytic oxidation (PEO) coatings was investigated as a function of NaOH concentration in 0.06 M $Na_2SiO_3$ + 0.06 M $Na_3PO_4$ solution by using SEM and epoxy replica method. The PEO film was formed on AZ31 Mg alloy by the application of anodic pulse current with 0.2 ms width and its formation behavior was studied by voltage-time curves during the formation of PEO films. It was found that the addition of NaOH into $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ containing aqueous solution causes a decrease in the PEO film formation voltage, suggesting that dielectric breakdown of the PEO becomes easier with increasing $OH^-$ ion concentration in the solution. With increasing $OH^-$ ion concentration, thickness of the PEO film increased and surface roughness decreased. The size of pores formed in the PEO layer became smaller and the number of cracks in the PEO layer increased with increasing $OH^-$ ion concentration. Based on the experimental results obtained in the work, it is suggested that $OH^-$ ions in the solution can contribute not only to the dielectric breakdown but also to the formation of PEO films in the presence of $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ ions in the solution.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1483-1490
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• 2011

The protection effect of a $ZrO_2$ coating layer on a $LiCoO_2$ thin film was characterized. A wide and smooth $LiCoO_2$ thin film offers sufficient opportunity for careful observation of the reaction at the interface between cathode (coated and uncoated) and electrolyte. The formation of a $ZrO_2$ coating on a $LiCoO_2$ thin film was confirmed by secondary ion mass spectrometry. Scanning electron and atomic force microscopy were used to characterize the surface morphologies of coated and uncoated films before and after cycling. A $ZrO_2$-coated $LiCoO_2$ film showed a higher discharge capacity and rate capability than an uncoated film. This may be associated with a surface protection effect of the coating. The surface of a pristine film was damaged during cycling, whereas the coated film maintained a relatively clear surface under the same measurement conditions. This result clearly demonstrates the protection effect of a $ZrO_2$ coating on a $LiCoO_2$ thin film.

• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.12-13
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• 2012

An environmentally friendly method for in situ growth of Mg-Al hydrotalcite (HT) film on AZ31 magnesium alloy has been developed. The growth processes and corrosion resistance of the HT film were investigated. Then the HT film was surface modified by phytic acid solution to further improve the corrosion resistance. The film formation involves the dissolution of AZ31 substrate, adsorption of the ions from solution, nucleation of the precursor, followed by the dissolution of $Al^{3+}$, exchanging of $OH^-$ by $CO{_3}^{2-}$ and growth of the HT film. The HT film is very compact and acts as a barrier against $Cl^-$ attack in the early stage of corrosion, and then the surface of the film is dissolved gradually. This dense HT film can provide effective protection to the AZ31 alloy. The HT film with surface modification by phytic acid presents a self-healing feature and exhibits better corrosion resistance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.205-206
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• 2011

Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.373-378
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• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.