• 대한방사선기술학회지:방사선기술과학
• /
• 제13권1호
• /
• pp.19-24
• /
• 1990

In appilcation of wide latitude HR-C film to chest x-ray examination, former x-ray diagnosis area is larger and diagnostic information has great deal of promotion. HR-C film is compare to former x-ray film is larger latitude and density level is small, reading is very easily. Especially, high estimate that is in characteristic curve linearity of toe part is good, contrast of low density made good shape and not good describe to overlap is diagnostic information increase mediastinum portion etc.

• 비파괴검사학회지
• /
• 제19권5호
• /
• pp.356-362
• /
• 1999

공업용 방사선 필름의 필름 농도가 대략 3.5 이하의 농도 구간에서 상대 노출에 대해 지수 함수적으로 증가한다고 가정하여, 필름특성곡선에 관한 일반식과 두께 변화에 대한 농도 변화 관계식을 새로이 제안하였다. 연속 X-선과 $Ir^{192}$에 의한 ${\gamma}$-선으로 탄소강의 계단시편에 대해 시험한 결과, 대략 $1.0{\sim}3.5$의 농도 범위에서 두께 변화에 대한 농도의 상용 대수변화가 기존의 관계식에 비해 보다 선형적인 경향을 나타내었으며 실제 계단 시편의 치수와 제안한 관계식에 의한 평가를 비교한 결과 본 연구에서 제안한 농도-두께 관계식에 의한 결과가 기존의 관계식에 의한 결과보다 정확하였다. 그리고 시험체의 두께가 증가함에 따라 beam hardening effect에 의해 유효선흡수계수가 달라지는 연속 X-선에 비해 상대적으로 에너지 스펙트럼이 단순한 ${\gamma}$-선이 두께 평가를 위한 더 적합한 방사선원임을 확인하였다. 본 연구에서 제안한 관계식은 국부적인 부식 손상의 깊이와 분포도를 평가할 수 있으므로 압력 용기 등의 산업 설비의 건전성 평가에 활용할 수 있다.

• 대한기계학회논문집B
• /
• 제21권9호
• /
• pp.1165-1173
• /
• 1997

The steady state close-contact melting phenomenon occurring between a phase change material and an isothermally heated flat plate with relative motion is investigated analytically, in which the effects of vertical convection in the liquid film and solid-liquid density difference are incorporated simultaneously. Not only the scale analysis is conducted to estimate a priori qualitative dependence of system variables on characteristic parameters, but also an analytical solution to a set of simplified model equations is obtained to specify the effects under consideration. These two results are consistent with each other, in that the vertical convection affects both the solid descending velocity and the film thickness, and that the density difference alters only the solid descending velocity. While the effect of vertical convection can be characterized conveniently by a newly introduced temperature gradient factor which asymptotically approaches the unity/zero with decreasing/increasing the Stefan number, that of density difference is represented by the liquid-to-solid density ratio. It is shown that the solid descending velocity depends linearly on the density ratio, and that the ratios of solid descending velocity, film thickness and friction coefficient to the conduction solution are proportional to 3/4, 1/4 and -1/4 powers of the temperature gradient factor, respectively. Also, established is the fact that the effect of convection can be legitimately neglected in the analysis for the range of the Stefan number less than 0.1.

• Corrosion Science and Technology
• /
• 제2권5호
• /
• pp.212-218
• /
• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• 치과방사선
• /
• 제18권1호
• /
• pp.213-225
• /
• 1988

This study was to compare the quality of image by different screen and film combinations. Using the sensitometer measured the speed and average gradient of blue sensitive films and orthochromatic films. The films was combined with rare earth screen LR, LM, LF and conventional screen OM, OH, XOR, OKa and exposed the step wedge to impulse 2, 3, 4, 6, 10, 15, 24,3 8, 60 and measured the density. The following results were obtained: 1. The density of film and film-screen combinations showed significant difference, then in film-screen combinations was significantly different by the screens than films. 2. The speed of blue sensitive films was little different, the TMG of orthochromatic films produced high speed, and the AX film was high average gradient. 3. The relative speed of film-screen combinations showed significant difference, and was high in the OKa of the conventional screens and in the LR of the rare earth screens, especially that of LR screen in the combination with blue sensitive films was high. 4. The average gradient of film-screen combinations showed no significant difference, and was high in the OKa screen and LR/OG combination, and that of OKa/AX combination was highest. 5. The latitude of film-screen combinations showed significant difference by screens, and was high in the LM screen in combination with blue sensitive films and in the OM screen in combination with orthochromatic films. 6. The subject contrast of film-screen combinations showed significant difference by screen, and was high in the LR screen in combination with blue sensitive AX film and orthochromatic TMG film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
• /
• pp.77-77
• /
• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국자원식물학회지
• /
• 제16권2호
• /
• pp.118-122
• /
• 2003

흑색 비닐피복과 재식밀도에 따른 지황의 생육과 수량에 미치는 영향을 구명하기 위해 지황 1호를 시험재료로 흑색 비닐피복과 재식밀도를 달리하여 재배 시험을 수행하였던 결과를 요약하면 다음과 같다. 출현율은 무피복 78.0%에 비하여 흑색 비닐피복에서 3.1%더 높았고, 재식밀도 간에는 차이가 없었다 생육은 흑색 비닐피복과 소식에서 생육이 왕성하였으나, 단위 면적 당 엽 중, 근경 수는 밀식 할수록 무겁거나 많았다. 건근경중은 무피복 402 kg/10a에 비하여 흑색 비닐피복재배에서 28% 증수되었으며, 개체 당 건근경중은 소식할수록, 단위면적 당 수량은 밀식 할수록 증가하였다.

• 한국전기전자재료학회논문지
• /
• 제11권11호
• /
• pp.1007-1013
• /
• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.371-377
• /
• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.411-414
• /
• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.