• Title/Summary/Keyword: Film Structure

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Electrical Properties in $Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ Structure and the Role of $SrTiO_3$ Film as a Buffer Layer ($Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ 구조의 전기적 특성 분석 및 $SrTiO_3$박막의 완충층 역할에 관한 연구)

  • 김형찬;신동석;최인훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.436-441
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    • 1998
  • $Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

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Improvement of Surface-enhanced Raman Spectroscopy Response Characteristics of Nanoporous Ag Metal Thin Film with Surface Texture Structures (표면 요철구조를 적용한 나노 다공성 Ag 금속박막의 SERS 응답 특성 개선)

  • Kim, Hyeong Ju;Kim, Bonghwan;Lee, Dongin;Lee, Bong-Hee;Cho, Chanseob
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.255-260
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    • 2020
  • In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

A Research on DLC Thin Film Coating of a SiC Core for Aspheric Glass Lens Molding (비구면 유리렌즈 성형용 SiC 코어의 DLC 코팅에 관한 연구)

  • Park, Soon-Sub;Won, Jong-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.12
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    • pp.28-32
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    • 2010
  • Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

Thermal Characteristics of Heating Films Including Conductive Graphite (전도성 흑연을 포함하는 발열 필름의 열적 특성)

  • Choi, Gyuyeon;Oh, Weontae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.500-504
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    • 2020
  • Heating films were prepared with composites of poly (methyl methacrylate) and conductive graphite. The as-prepared composite was deposited on a PET film and then fabricated using a bar coater to produce a film with uniform thickness. Copper electrodes were attached to both ends of the as-prepared film, and the heating characteristics of the film were analyzed while applying a DC voltage. The electrical conductivity and heating temperature of the heating films depended on the size, structure, content, and the dispersion characteristics of the graphite in the composite. The thermal energy was adjusted by controlling the electrical energy, based on the Joule heating theory. The electrical resistance of the film was altered in proportion to Ohm's law, and the heating temperature was changed according to the structure of the film (interelectrode spacing or electrode length) and the conductive graphite content. When the content of conductive graphite in the film increases, the electrical resistance decreases, and the heating temperature increases; however, there is no significant change above a certain content (50%).

Influence of Deposition Parameters on Film Hardness for Newly Synthesized BON Thin Film by Low Frequency R.F. PEMOCVD

  • G.C. Chen;J.-H. Boo;Kim, Y.J.;J.G. Han
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.73-73
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    • 2001
  • Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

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On a Way in which Biographical Film Summons Character and History - Focusing on the Film, The Golden Era - (전기 영화가 인물과 역사를 소환하는 한 방식에 대해 - 영화 <황금시대>를 중심으로)

  • Jin, Sung-Hee
    • Cross-Cultural Studies
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    • v.39
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    • pp.287-308
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    • 2015
  • Biographical film is a genre narrativizing the actual person and history, and reproducing the character and history in a biographical film is in a dimension different from a film focused on a fiction. Discussion between these methods of narrative composition and image reproduction in a biographical film is also, in line with artistic/aesthetic problems and ethical/philosophical theses of the film text. This study discusses the phase of the way of reproduction of the actual person, $Xi{\bar{a}}o$ $H{\acute{o}}ng$ in the biographical film, The Golden Era and the time she lived in a biographical film and how the audience's discussion of the film and socio-cultural discourse differ depending on their attitude towards the cinematic introspection of the text. The narrative structure, the method of image reproduction and cinematic devices of the film, The Golden Era are completely off the point of the general format of the traditional biographical film. In The Golden Era, $Xi{\bar{a}}o$ $H{\acute{o}}ng$ and the history which she lived in did not revive depending on an omniscient subject's selective statement and meta-film structure. Ann Hui removed general, mythic images of $Xi{\bar{a}}o$ $H{\acute{o}}ng$ formed in the field of traditional Chinese culture and reproduced her through multilateral visions of a real, fictional narrator. Each spectator's judgment and interpretation of the film intervene in the multi-layered and sparse descriptions of the actual person's images and the era of the characters. Through this, it is possible to approach the uniqueness and authenticity a historical character, $Xi{\bar{a}}o$ $H{\acute{o}}ng$ and to have an opportunity of multi-layered reflection on how to secure a critical distance and make a perception in historical judgment.

A Comparative Study of The Electrical Properties of Arachidic Acid L-B Film in the Al/LB/Al and Au/LB/Au Electrode Structures (Al/LB/Al, Au/LB/AU 전극구조에서 Arachidic Acid L-B막의 전기적 특성에 관한 비교 연구)

  • 오세중;김형석;이창희;김태완;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.112-115
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    • 1993
  • We have studied a property of arachidic acid Langmuir-Blodgett films at room temperature with two different electrodes ; Al/LB/Al and Au/LB/Au. Since a natural oxide layer is formed on top of the Al electrode, the appropriate structure of AL/LB/Al is Al/Al$_2$O$_3$/LB/Al. To obtain a property of Pure LB film, Aua/LB/Au structure was made. In Al/Al$_2$O$_3$/LB/Al structure, a conductivity of 3.7${\times}$10$\^$-14/ S/cm was obtained by using current-voltage(I-V) characteristics. In Au/LB/AU structure, however, I-V curve was not able to be measured because of short current even in 51 layers of the LB film. A status of defects in the film was confirmed by copper decoration method. We have clearly seen a rather big difference of defect in those two above structures.

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Adhesion Improvement for Copper Process in TFT-LCD

  • Tu, Kuo-Yuan;Tsai, Wen-Chin;Lai, Che-Yung;Gan, Feng-Yuan;Liau, Wei-Lung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1640-1644
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    • 2006
  • The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

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A Study for the fabrication of Au dot-arrays using porous alumina film (다공성 알루미나 박막을 이용한 Au dot-arrays의 제작에 관한 연구)

  • Jung, Kyung-Han;Park, Sang-Hyun;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.922-925
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    • 2003
  • The interest of self-organization materials that have uniform and regular structure in nano scale has been grown due to their utilization in various fields of nanotechnology. An attractive candidate among these materials is anodic aluminum oxide film, which are formed by anodization of aluminum in an appropriate acid solution. The anodic aluminum oxide film has a highly ordered porous structure with very uniform and nearly parallel pores that can be organized in an almost precise close-packed hexagonal structure. In this study, we attempt to make Au dot arrays, which were fabricated using anodic aluminum oxide film as an evaporation mask. The Au dot arrays have a uniform sized dots and spacing to its neighbors and the average diameter of Au dots is about 60 nm corresponding to them of the mask.

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