• Title/Summary/Keyword: Film Structure

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Visual Narrative Strategy of Game Promotion: Comparative Analysis of Dead Island and Dead Island 2 Trailers (게임 프로모션 시각 내러티브 전략: <데드 아일랜드>와 <데드 아일랜드 2> 예고편 비교 분석)

  • Roh, Chul-Hwan
    • Cartoon and Animation Studies
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    • s.48
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    • pp.249-269
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    • 2017
  • Promotion and marketing, which are essential to lower the investment risk and maximize commercial profit in the video game market. Game developers and publishers set up public relations strategies to encourage potential consumers' needs. Considering characteristics of video game, the trailer, which is the animated image advertisement material, could occupy a key position in its promotion and marketing plan. Cinematic spectacles and attractive narratives are essential ingredients for game trailers, which are usually produced in 3D animation. Dead Island is an open world first person shooters (FPS) game released in 2011. When launched, it grabbed a great attention with a trailer, awarded the Golden Lion Prize for the best internet film at the Cannes Lions International Festival of Creativity. The game was a commercial success and several spin-offs were producted. In 2014, its publisher, Deep Silver showed the official trailer of Dead Island 2 at Electronic Entertainment Expo, the world's largest game show. Dead Island 2 was scheduled to be released in 2016, but has been now delayed until 2018. This study compares and analyzes two trailers of Dead Island 1 and Dead Island 2. We examine the narrative structure of the trailer for the sequel promotion of a successful game. The differences between the two could be useful for building a promotion strategy of other game series.

The Archeology of Memory: The Explorations of Animated Documentary

  • Guo, Chunning
    • Cartoon and Animation Studies
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    • s.45
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    • pp.479-512
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    • 2016
  • This is a practice-based research, aiming to explore the experiments of Animated Documentary, which is a unique form can explore the mysteries and complexity of memories. Animated Documentary is a medium through which one can reveal an individual's memories within the context of a narrative that is historically situated and influenced. The marriage of animation and documentary gave birth to a new form of film. How to category this new form? Is it an animated short or documentary short? In fact, this raises issue that questioning the nature of animation and documentary. From Shuibo Wang's works, more young Chinese artists began to experiment with symbols (related to the Political Pop Trend) in visual narration, which could also be seen as a reflection of structuralism and semiology in the contemporary Chinese art field. As a case study, this paper demonstrates how animated short "Ketchup" revealed the problems of youth and social turmoil through the memories of a six-year boy. On the Festivals and conferences, the publics were shocked to know "Ketchup" based on true memories, and they were more curious why the crucial things almost be forgotten. Actually forget fulness is one of the layers of memories and Animated Documentary will offer a new way to explore how our memories are shaped.

A Study on the Stylistic Features of Muczynski's Music Which Affects Movie (무진스키의 음악이 영화에 미친 양식적 특성 연구)

  • Yoon, YoungJo
    • Cartoon and Animation Studies
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    • s.49
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    • pp.589-610
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    • 2017
  • This study aimed at examining the music world of the composer Muczynski, who played an important and meaningful role in the various experimental trends of music which began to appear in the early $20^{th}$ century, and his works, thereby understanding his relationship with the development of music of various genres today. In the study, his pieces of piano music among his works, which formed the basis for his music, were analyzed. The study examined stylistic characteristics, that is techniques of various types including form, melody, harmony, tonality, rhythm and structure, and introduced the composer's growth in terms of music and philosophical background. Muczynski, the composer who showed the characteristics of neoclassicism, neoromanticism and neobaroque in contrast to the various forms of the $20^{th}$ music, namely music of free styles including atonal music, twelve-tone technique, avant-garde music and electronic music, used traditional forms. However, the characteristics of his works are very free. In addition, in the 1960s, he participated in the production of documentary movie music, creating very creative and sensational music. Muczynski's music has the features of tonality and shows neoclassic and neoromantic features including economical idea, lyrical melody, bitonality and nine-note scale. His music, therefore, is being evaluated as very creative and valuable and is largely significant in that it has provided a good basis for the development of modern movie music and jazz music today.

Photoelectric Properties of PbTe/CuPc Bilayer Thin Films (PbTe/CuPc 이층박막의 광전 특성)

  • Lee, Hea-Yeon;Kang, Young-Soo;Park, Jong-Man;Lee, Jong-Kyu;Jeong, Jung-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.67-72
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    • 1998
  • The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

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Experimental Investigation of Variable Emittance Material Based on (La, Sr)MnO3 ((La, Sr)MnO3을 이용한 가변 방사율 소재에 관한 연구)

  • Han, Sunwoo;Choi, Bongsu;Song, Tae-Ho;Kim, Sun Jin;Lee, Bong Jae
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.37 no.6
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    • pp.583-590
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    • 2013
  • Variable emittance radiators can be used in a thermal management system in space because their total emittance changes depending on the temperature of the system. When the temperature of the system decreased, the emittance also decreased so as to minimize the heat loss to the environment. In contrast, when the temperature of the system increased, the emittance also increased such that radiation cooling could occur. Thermochromic materials, whose emittance is a function of the temperature, are often used in variable emittance radiators because no additional parts are needed. In this study, we fabricated a variable-emittance coating by using a sol-gel method based on LSMO ($La_{1-x}Sr_xMnO_3$) and experimentally characterized the emittance change with respect to temperature. Furthermore, we also examined the stability of LSMO film in space environments by exposing it to extremely low pressure and temperature.

A study on the fabrication of $Pb(Fe^{0.5},Nb^{0.5}O_3$ thin films by a Co-sputtering technique and their characteristics properties (동시 스퍼터링법에 의한$Pb(Fe^{0.5},Nb^{0.5}O_3$박막의 제조 및 특성 평가에 대한 연구)

  • 이상욱;신동석;최인훈
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.17-23
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    • 1998
  • $Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

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Fabrication and characterization of $WSi_2$ nanocrystals memory device with $SiO_2$ / $HfO_2$ / $Al_2O_3$ tunnel layer

  • Lee, Hyo-Jun;Lee, Dong-Uk;Kim, Eun-Kyu;Son, Jung-Woo;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.134-134
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    • 2011
  • High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

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Molecular Conductance Switching Processes through Single Ruthenium Complex Molecules in Self-Assembled Monolayers

  • Seo, So-Hyeon;Lee, Jeong-Hyeon;Bang, Gyeong-Suk;Lee, Hyo-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.27-27
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    • 2011
  • For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

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Characteristics of the Flux-lock Type Superconducting Fault Current Limiter According to the Iron Core Conditions (자속구속형 초전도 전류제한기의 철심조건에 따른 특성)

  • Nam, Gueng-Hyun;Lee, Na-Young;Choi, Hyo-Sang;Cho, Guem-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.7
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    • pp.38-45
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    • 2006
  • The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

Design of a Full-Printed NFC Tag Using Silver Nano-Paste and Carbon Ink (은 나노 분말과 카본 잉크를 이용한 완전 인쇄형 NFC 태그 설계)

  • Lee, Sang-hwa;Park, Hyun-ho;Choi, Eun-ju;Yoon, Sun-hong;Hong, Ic-pyo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.42 no.4
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    • pp.716-722
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    • 2017
  • In this paper, a fully printed NFC tag operating at 13.56 MHz was designed and fabricated using silver nano-paste and carbon ink. The proposed NFC tag has a printed coil with an inductance of $2.74{\mu}H$ on a PI film for application to an NFC tag IC with an internal capacitance of 50 pF. Screen printing technology used in this paper has advantages such as large area printing for mass production, low cost and eco-friendly process compared to conventional PCB manufacturing process. The proposed structure consists of a circular coil implemented as a single layer using silver nano-paste and carbon ink, a jumper pattern for chip mounting between the outer edge and the center of the coil, and an insulation pattern between the coil and the jumper pattern. In order to verify the performance of the proposed NFC tag, we performed the measurements of the printing line width, thickness, line resistance, adhesion and environmental reliability, and confirmed the suitability of the NFC tag based on the full-printed manufacturing method.