• Journal of the Korean Magnetics Society
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• v.22 no.1
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• pp.6-10
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• 2012

We have observed the change in the film resistance of thin nickel film up to 13 nm, which is deposited on a porous anodic alumina substrate, prepared by two-step anodization technique under phosphoric acid. The resulting film grows as a porous film, following the pore structure on the surface of the alumina substrate, and the value of the resistance lies above $150k{\Omega}$ within the range of thickness studied here, decreasing very slowly with the film thickness. The observed resistance value is much higher than the reported value of a uniform film at the same thickness. Since the observed value of the surface coverage with the pores is smaller than the critical value, expected from the percolation theory, the pore structure limits the formation of conduction channel across the film. In addition, by comparing to the typical model of thickness-dependent resistivity, we expect that the scattering at the pore edge further increases the film resistance.

• Corrosion Science and Technology
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• v.21 no.4
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• pp.282-289
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• 2022

Aluminum 1000 series alloy, a pure aluminum with excellent workability and weldability, is mainly used in the ship field. Aluminum alloy can combine with oxygen in the atmosphere and form a natural oxide film with high corrosion resistance. However, its corrosion resistance and durability are decreased when it is exposed to a harsh environment for a long period of time. For solving this problem, a porous oxide film can be formed on the surface using an anodizing treatment method, a typical surface technique among various methods. In this study, aluminum 1050 alloy was anodized for 2 minutes, 6 minutes, and 10 minutes. The structure and shape of the oxide film were then analyzed to determine the corrosion resistance according to the thickness of the oxide film that changed depending on working condition using 15 wt% NaCl. After it was immersed in NaCl solution for 1, 5, and 10 days, corrosion damage was observed. Results confirmed that the thickness of the oxide film increased as the anodization time became longer. The depth of surface damage due to corrosion became deeper when the film was immersed in the 15 wt% NaCl solution for a longer period of time.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.195-202
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• 2007

Corrosion resistance and torque of M10 bolt coated with Magni 565 were investigated. Corrosion protection mechanism were also studied with the microstructure of coating film. The bolts with the optimum conditions showed around $10{\mu}m$ layer thickness, a great corrosion resistance in salt spray test and a proper torque in torque/tension test. But torque coefficient k increased with the number of bolting and clamping force of M10 bolt showed significantly lower than that of specified value 28.3kN. It was thought that the repeated bolting made the coating film peel off and powdery. The sample coated with optimum coating conditions showed more higher polarization resistance and corrosion potential than the specimens of top and base coat only. The base coating film was composed of lamellar zinc flakes, which provides a large sacrificial cathodic protection. Meanwhile, the top coating film was composed of organic aluminium pigments layer, which provides barrier protection to the corrosion circumstances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.110-111
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• 2006

In this paper, we investigated resistance characteristic of chalcogenide material for next generation ReRAM nonvolatile memory device with laser irradiation. A AES is used to test Ag doping ratio into a As-Ge-Se-S thin film. A sample resistance was observed in real time with He-Ne laser(632.8nm). As a result, resistance of thermal treated As-Ge-Se-S thin film was $500{\Omega}$ which is smaller than initial $1.3M{\Omega}$. A resistance of non-treated Ag/As-Ge-Se-S thin film was $200{\Omega}$ which is lower than $35M{\Omega}$.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.495-502
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• 2022

Anodization is a representative electrochemical surface treatment method that can improve both heat resistance and corrosion resistance by forming an anodization film on the surface of the aluminum. However, these properties can be changed after an additional heat treatment process. In this study, Al 6061 was subjected to an anodization process at 60 V for 1 hour, 5 hours, or 9 hours. An additional heat treatment process was performed at 500 ℃ for 30 minutes. Field emission scanning electron microscopy (FE-SEM) analysis revealed that the thickness of the anodized film was increased in proportion to the anodization time. Both pore size and pore diameter of the anodized film was also increased after anodization. After an additional heat treatment process, there were no significant changes in the thickness, pore size, or pore diameter of the anodized film. Heat resistance was confirmed through thermal analysis and chemical resistance was evaluated with a potentiodynamic polarization test.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.86-93
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• 2009

The crack formation and the resistance of ITO film on PET substrate with a thickness of 20 nm were investigated as a function of strain. The onset strain for the increase of resistance increased with increasing strain rate, suggesting the crack initiation is dependent on the strain rate. Electrical resistance increased at the strain of 1.6% at the strain rates below $10^{-4}/sec$ while it increased at ${\sim}2%$ at the strain rates above $10^{-3}/sec$. The critical strain at which the cracks were formed is close to the proportional limit. Upon loading, the initial cracks perpendicular to the tensile axis were observed and propagated the whole sample width with increasing strain. The spacing between horizontal cracks is thought to be determined by the fracture strength and the interfacial strength between ITO and PET. The crack density increased with increasing strain. However, the effect of the strain rate on the crack density was less pronounced in ITO/PET with 20 nm ITO thickness than ITO/PET with 125 nm ITO thickness, the strength of ITO film is thought to increase as the thickness on ITO film decreases. The absence of cracks on ITO film at a strain as close as 1.5% can be attributed to the compressive residual stress of ITO film which was developed during cooling after the coating process. The higher critical strain for the onset of the resistance increase and the crack initiation of ITO/PET with a thinner ITO film (20 nm) can be linked with the higher strength of the thinner ITO film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.292-292
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• 2011

TFT (Thin Film Transistor)에서 공정을 단순화 시키고, 가격을 하락시키기 위해서는 Poly-Si을 대체할 물질이 필요하다. 이 연구에서는 Chalcogenide Material의 하나인 GeTe 박막을 이용하여 TFT Channel으로 사용 가능한 물질인지 알아보기 위하여 Post-Annealing을 한 뒤, 상 변화에 따른 박막의 저항 변화, Carrier Concentration (cm-3)과 Mobility (cm2V-1s-1)의 변화를 알아보았다. Sputtering을 이용하여 증착한 GeTe 100 nm Thin Film 위에 Sputtering을 이용하여 SiO2 5 nm를 Capping Layer로 증착한 후, Post-Annealing을 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$로 온도를 변화 시키며 진행하였고, 이로 인하여 GeTe Thin Film에 외부의 영향을 최소화 하였다. 먼저 GeTe Thin Film의 Sheet Resistance를 측정한 결과는 300$^{\circ}C$ 까지 낮은 Sheet Resistance의 거동을 보이며 반면, 400$^{\circ}C$ 이상이 되면 높은 Sheet Resistance의 거동을 보인다. Hall Measurement를 통해, Carrier Concentration과 Mobility를 알아보았다. Carrier Concentration은 온도가 증가하면 1E+19에서 1E+21 까지 증가하며, Mobility는 감소하는 경향을 보인다. 500$^{\circ}C$ Post-Annealed GeTe Thin Film에서는 Resistivity가 상당히 높아 4 Point Probe (Range : 1 mohm/sq~2 Mohm/sq)로 측정이 불가능하다. XRD로 GeTe Thin Film을 분석한 결과 as-grown, 200$^{\circ}C$, 300$^{\circ}C$에서는 Cubic의 결정 구조를 보이며, Sheet Resistance가 급격히 증가한 400$^{\circ}C$, 500$^{\circ}C$에서는 Rhombohedral의 결정구조를 보인다. GeTe Thin Film은 400$^{\circ}C$ 이상의 Post-Annealing 온도에서 cubic 구조에서 Rhombohedral 구조로 상 변화가 일어난다. 위 결과를 통해, 결정 구조의 변화가 GeTe Thin Film의 저항, Carrier Concentration과 Mobility에 밀접한 영향이 미치는 것을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.27-34
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• 2017

We investigated the feasibility of parylene F usage as an intermediate layer between a polydimethylsiloxane (PDMS) substrate and an Au thin-film interconnect as well as the swelling effect of PDMS substrate on the stretchable deformability of an Au thin film. The 150-nm-thick Au film, which was sputtered on a PDMS substrate without a parylene F layer, exhibited an initial resistance of $11.7{\Omega}$ and an overflow of its resistance at a tensile strain of 12.5%. On the other hand, the Au film, which was formed with a 150-nm-thick parylene F layer, revealed an much improved resistance characteristics: $1.21{\Omega}$ as its initial resistance and $246{\Omega}$ at its 30% elongation state. With swelling of PDMS substrate, the resistance of an Au film substantially decreased to $14.4{\Omega}$ at 30% tensile strain.