• 한국정보전자통신기술학회논문지
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• 제3권3호
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• pp.14-21
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• 2010

유비쿼터스 헬스케어 환경을 위해서는 생체 정보를 실시간으로 정확하게 측정하는 것이 중요할 뿐만 아니라, 이러한 생체 정보 측정 장치는 저전력으로 설계되어져야 한다. 본 논문에서는 지금까지 사용되어 오던 손가락 프로브의 불편함을 없애기 위해 피에죠 필름 센서를 이용하여 손목의 요골 동맥으로부터 심장의 동기 신호인 맥파를 측정하였다. 본 논문에서는 두장의 피에죠 필름 센서를 이용하여 맥파신호와 동잡음 참조 신호를 추출하여 적응 잡음 제거기에 적용함으로써, 동잡음 제거된 맥파 신호를 얻을 수 있었다. 동잡음 제거된 맥파 신호를 이용하여 생체 정보를 얻을 수 있었다.

• 한국정보통신학회논문지
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• 제7권2호
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• pp.250-254
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• 2003

본 논문에서는 2GHz 대역 RF 대역통과 필터 응용을 위한 FBAR 소자에 대한 연구를 발표한다. 본 연구의 FBAR 소자는 크게 상부 및 하부 전극 사이에 압전체(AlN)가 삽입되어 있는 공진부와 SiO2/W이 여러층으로 적층되어 있는 음향반사층 두 부분으로 구성되어 있다. RF sputtering 방법으로 증착된 AlN 박막은 c축이 기판에 수직한 정도가 우수한 c축 우선 배향성을 갖는다. 이때 결정립(grain)은 길고 얇은 주상형(columnar)을 보인다. 뿐만아니라, 우수한 품질계수(4300)와 반사손실(37.19 dB)도 얻어졌다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.634-638
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• 2003

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

• 대한화학회지
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• 제48권1호
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• pp.39-45
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• 2004

산에 민감한 작용기를 갖는 tert-butyl methacrylate(tBMA)와 산 증식 기능을 갖는 4-hydroxy-4''p-styrenesulfonyloxyisopropylidene dicyclohexane(HSI)과 4-p-styrenesulfonyloxy-4''-tosyloxyisopropylidene dicyclohexane (STI)를 둘 다 함께 갖고 있는 공중합체를 새로운 고분자 산증식형 포토레지스트로 합성하였다. 산증식형 공중합체인 Poly(HSI-co-tBMA) film과 Poly(STI-co-tBMA) film은 산의 부재 시에는 레지스트 공정 온도에 대하여 충분한 열적 안정성을 나타내었다. Poly(STI-co-tBMA) film의 감도는 tBMA homopolymer에 비교하여 2배 정도 증진되었지만, Poly(HSI-co-tBMA) film은 오히려 2배 정도 감도가 저하되는 결과를 나타내었다. 고분자에 도입한 이러한 산증식 기능을 갖는 그룹의 구조에 따라 광감도 증진 효과가 다르게 나타남을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1604-1607
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• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.585-590
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• 2000

Recently, It is gradually raised necessity that thickness of thin film is measured accuracy and managed in industrial circles and medical world. Ultrasonic Signal processing method is likely to become a very powerful method for NDE method of detection of microdefects and thickness measurement of thin film below the limit of Ultrasonic distance resolution in the opaque materials, provides useful information that cannot be obtained by a conventional measuring system. In the present research, considering a thin film below the limit of ultrasonic distance resolution sandwiched between three substances as acoustical analysis model, demonstrated the usefulness of ultrasonic Signal processing technique using information of ultrasonic frequency for NDE of measurements of thin film thickness, sound velocity, and step height, regardless of interference phenomenon. Numeral information was deduced and quantified effective information from the image. Also, pattern recognition of a defected input image was performed by neural network algorithm. Input pattern of various numeral was composed combinationally, and then, it was studied by neural network. Furthermore, possibility of pattern recognition was confirmed on artifical defected input data formed by simulation. Finally, application on unknown input pattern was also examined.

• Advances in nano research
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• 제1권3호
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• pp.153-158
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• 2013

An approach to achieving of spatially homogeneous, ordered ensemble of semiconductor quantum rods in polymer film of polyvinyl butyral is reported. The CdSe/ZnS quantum rods are embedded to the polymer film. Obtained film is stretched up to four times to its initial length. A concentration of quantum rods in the samples is around $2{\times}10^{-5}$ M. The absorption spectra, obtained in the light with orthogonal polarization, confirm the occurrence of spatial ordering in a quantum rod ensemble. Anisotropy of the optical properties in the ordered quantum rod ensemble is examined. The presented method can be used as a low-cost solution for preparing the nanostructured materials with anisotropic properties and high concentration of nanocrystals.

• Journal of information and communication convergence engineering
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• 제5권3호
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.839-842
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• 2009

In this paper, chalcogenide glasses material(Se, Te, Sb) is firstly used as encapsulation layer of OLEDs under high vacuum of $10^{-4}$Pa. In the experiments, properties of OLEDs encapsulated by Se, Te, Sb thin film is compared with that of device encapsulated by traditional method. It is found that Se, Te, Sb film can extend lifetime of devices to 1.4, 2, 1.3 times respectively. Chalcogenide glasses film as encapsulation layer has little effect on some characteristics of device. The research indicated that OLEDs can be well protected upon applying Se, Te, Sb film as encapsulation layer. It is clear that it can prolong the lifetime obviously.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.886-887
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• 2011

투명전극을 제작하기 위해서 SiOC 절연막 위에 AZO박막을 증착하였다. AZO 박막은 rf power가 5~200W인 RF 마그네트론 스퍼터 방법에 의해서 제작되었다. SiOC 박막은 산소와 DMDMOS 전구체의 유량비를 다르게 하여 플라즈마 발생 화학적 기상 증착방법으로 증착되었다. 증착된 SiOC박막은 UV visible spectroscopy에 의해서 분석하였다. 투명전극의 비저항은 rf 전력이 작을 수록 낮았으며, SiOC 절연막 위에 AZO를 증착시킨 후 반사률은 반대로 바뀌는 것을 확인하였다.