• 제목/요약/키워드: Film Heater

검색결과 189건 처리시간 0.025초

마그네트론 스퍼터링에 의해 제조된 Cr1-xAlxN 박막의 Al 함량과 열처리에 따른 온도저항계수 (Effect of Al content and heat treatment on the temperature coefficient of resistance of Cr1-xAlxN film deposited by magnetron-sputtering)

  • 문선철;김상호
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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    • pp.187-188
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    • 2012
  • magnetron-sputtering법을 사용하여 $Cr_{1-x}Al_xN$ 박막을 증착함에 있어 Al 함량의 변화를 주었다. 그 후 열처리를 통하여 thermal inkjet 방식 print head의 heater resistor 소재로서의 특성 향상을 도모하였다. Al의 함량이 증가할수록 결정구조는 NaCl에서 wurtzite HCP 구조로 변화하였으며 전기적 특성 또한 다르게 나타났다. 비열처리 시 Al 함량이 클수록 결정성은 떨어진다는 것을 확인하였고, 열처리 시 Al 함량이 적을 수 록 더 안정한 온도 저항 계수를 나타내는 것을 확인하였다.

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Design and Simulation of Heating Rubber Roller for Laminating Process

  • Hur, Shin;Woo, Chang Su
    • Elastomers and Composites
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    • 제51권4호
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    • pp.280-285
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    • 2016
  • The purpose of this study is to get optimum design and operation conditions of the heating rubber roller for laminating process. The cause of performance degradation of heating rubber roller is delamination of rubber on metal tube, rubber aging due to high temperature. We measured the material properties of thermal expansion, thermal conductivity, specific heat and density and analyzed thermal distributions of rubber layer using finite element method. As a result of heat/flow analysis, the density distribution of heating coil must shorten the stabilization time by reducing the temperature deviation on the length direction at the temperature rising section after increasing the density of the area contacting with the laminate film at the center part which is an opposite of the current composition while enabling to maintain the temperature of heater to be consistent while maintaining the temperature deviation to be low when heat loss is created. Finally, we determined optimum heating method of heating rubber roller.

RF 헬리콘 플라즈마를 이용한 회학기상 증착기의 제작 (Construction of CVD by using RF Helicon Plasma)

  • 신재균;현준원;박상규
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.607-612
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    • 1998
  • RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

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비등 촉진 마이크로 구조물을 이용한 휴대용 컴퓨터 냉각시스템의 열성능에 관한 연구 (Thermal Performance of Cooling System for a Laptop Computer Using a Boiling Enhancement Microstructure)

  • 조남해;정원용;박상희
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회B
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    • pp.2043-2052
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    • 2008
  • The increasing heat generation rates in CPU of notebook computers motivate a research on cooling technologies with low thermal resistance. This paper develops a closed-loop two-phase cooling system using a micropump to circulate a dielectric liquid(PF5060). The cooling system consists of an evaporator containing a boiling enhancement microstructure connected to a condenser with mini fans providing external forced convection. The cooling system is characterized by a parametric study which determines the effects of volume fill ratio of coolant, existence of a boiling enhancement microstructure and pump flow rates on thermal performance of the closed loop. Experimental data shows the optimal parametric values which can dissipate 33.9W with a film heater maintained at $95^{\circ}C$.

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공냉식 수직 흡수기의 열전달에 미치는 계면활성제의 영향 (Influence of surfactant on heat transfer of air-cooled vertical absorber)

  • 윤정인;권오경;문춘근
    • 설비공학논문집
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    • 제11권6호
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    • pp.740-748
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    • 1999
  • This research was concerned with the enhancement of heat transfer by surfactant added to the aqueous solution of LiBr. Different vertical tubes were tested with and without an additive of normal octyl alcohol. The test tubes were a bare inner surface, groove inner surface, corrugated inner surface and spring inserted inner surface tubes. The additive concentration was about 0.08 mass%. The heat transfer coefficient was measured as a function of film Reynolds number in the range of 20~200. Experiments were tarried out at higher cooling water temperature of $35^{\circ}C$ to simulate an air cooling condition for several kinds of absorber testing tubes. The experimental results were compared with cases without surfactant. The enhancement of heat transfer by Marangoni convection effect which was generated by addition of the surfactant is observed in each test tube. Especially, it is clarified that the tube with an inserted spring has the highest enhancement effect.

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분말타겟의 dc 마그네트론 스퍼터에 의한 ITO박막의 특성 (Characteristics of ITO Films Deposited by dc Magnetron Sputter Using Powder Target)

  • 김현후;신성호;신재혁;박광자
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.427-431
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    • 2000
  • ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

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PDP 투명전극의 응용을 위한 ZnO:Al 박막의 제작 및 평가 (Properties of ZnO:Al Transparent Conducting Films for PDP)

  • 박강일;김병섭;김현수;임동건;박기엽;이세종;곽동주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1430-1432
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    • 2003
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

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Development of apparatus for Single-sided Wet Etching and its applications in Corrugated Membrane Fabrication

  • Kim, Junsoo;Moon, Wonkyu
    • 센서학회지
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    • 제30권1호
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    • pp.10-14
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    • 2021
  • Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

산화질소 검출용 마이크로 가스센서 제조공정 (MEMS-Based Micro Sensor Detecting the Nitrogen Oxide Gases)

  • 김정식;윤진호;김범준
    • 한국재료학회지
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    • 제23권6호
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    • pp.299-303
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    • 2013
  • In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

Fabrication and characteristics of NOx gas sensors using WO3 and In2O3 thick films to monitor air pollution

  • 손명우;최정범;황학인;유광수
    • 센서학회지
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    • 제18권4호
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    • pp.263-268
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    • 2009
  • With the increasing number of automobiles, the problem of air pollution from the exhaust gases of automobiles has become a critical issue. The principal gases that cause air pollution are nitrogen oxide or NO$_x$(NO and NO$_2$), and CO. Because NO$_x$ gases cause acid rain and global warming and produce ozone(O$_3$) that leads to serious metropolitan smog from photochemical reaction, they must be detected and reduced. Mixtures of WO$_3$ and $In_2O_3$(WO$_3$:$In_2O_3$=10:0, 7:3, 5:5, 3:7, and 0:10 in wt.%), which are NO$_x$ gas-sensing materials, were prepared, and thick-film gas sensors that included a heater and a temperature sensor were fabricated. Their sensitivity to NO$_x$ was measured at 250$\sim$400$^{\circ}C$ for NO$_x$ concentrations of 1$\sim$5 ppm. The $In_2O_3$ thick-film sensor showed excellent sensitivity($R_{gas}/R_{air}$=10.22) at 300$^{\circ}C$ to 5-ppm NO. The response time for 70 % saturated sensitivity was about 3 seconds, and the sensors exhibited very fast reactivity to NO$_x$.