• 한국표면공학회지
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• 제53권3호
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Journal of Mechanical Science and Technology
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• 제16권7호
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• pp.966-974
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• 2002

An analytic approach has been employed to study condensate film thickness distribution inside cave-shaped cavity of a flat plate heat pipe. The results indicate that the condensate film thickness largely depends on mass flow rate and local velocity of condensate. The increasing rate of condensate film for circular region reveals about 50% higher value than that of vertical region. The physical properties of working fluid affect significantly the condensate film thickness, such as the condensate film thickness for the case of FC-40 are 5 times larger than that of water. In comparison with condensation on a vertical wall, the average heat transfer coefficient in the cave-shaped cavity presented 10∼15% lower values due to the fact that the average film thickness formed inside the cave-shaped cavity was larger than that of the vertical wall with an equivalent flow length. A correlation formula which is based on the condensate film analysis for the cave-shaped cavity to predict average heat transfer coefficient is presented. Also, the critical minimum fill charge ratio of working fluid based on condensate film analysis has been predicted, and the minimum fill charge ratios for FC-40 and water are about Ψ$\_$crit/=3∼7%, Ψ$\_$crit/=0.5∼1.3% respectively, in the range of heat flux q"=5∼90kW/㎡.

• 한국진공학회지
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• 제4권S1호
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• pp.130-137
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• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.67-72
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• 2023

In this paper, a dye-sensitized solar cell (DSSC), one of the representative third-generation solar cells with eco-friendly materials and processes compared to other solar cells, was modeled using MATLAB/Simulink. The simulation was conducted by designating values of series resistance, parallel resistance, light absorption coefficient, and thin film electrode thickness, which are directly related to the efficiency of dye-sensitized solar cells, as arbitrary experimental values. In order to analyze the performance of dye-sensitized solar cells, the optimal value among each parameter experimental value related to efficiency was found using formulas for fill factor (FF) and conversion efficiency.

• 대한기계학회논문집B
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• 제37권3호
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• pp.267-273
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• 2013

막충진재(film fill)를 갖는 냉각탑용 팬의 효율적인 운전조건을 제시하기 위하여, Merkel의 이론을 바탕으로 한 종전의 최적 총연간비용 모델을 사용하여 입구 물온도와 열부하에 따른 최소팬동력을 구하는 프로그램이 새로이 개발되었으며, 냉각탑의 설계 맵이 본 연구로부터 제시되었다. 전형적인 예들을 통하여 본 프로그램의 타당성이 입증되었다. 주어진 열부하에서 이들 팬동력(z 축)-공기질량플럭스(x 축, 최소팬동력 존재)-입구물온도(y 축, 최소팬동력의 최대값 존재)의 3차원 그래프는 말안장 형상으로 나타났다. 최소팬동력들은 열부하에 따라 증가하였다. 따라서, '고온수 유입과 저유량의 공기로 작동' 될 때가 항상 최소팬동력 조건이 아니며, '주어진 입구물온도에 대하여 최소팬동력에 대응하는 최적의 공기질량플럭스가 (열부하와 무관하게) 존재한다'는 사실이 본 연구결과로부터 밝혀졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• 한국광학회지
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• 제13권2호
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• pp.117-122
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• 2002

홀로그래픽 필름으로 제작된 그레이스케일 마스크를 통하여 두꺼운 포토레지스트를 자외선으로 근접 노광하여 주기 300 $\mu\textrm{m}$, 두께 17 $\mu\textrm{m}$, 초점거리 2.2 mm인 10$\times$10 미소렌즈 배열을 제작하였다. 그레이스케일 마스크는 컴퓨터로 설계한 미소렌즈 배열을 필름 출력기를 이용하여 고해상도 흑백 필름에 그레이스케일로 기록 및 현상하고 이를 다시 홀로그래픽 필름에 축소복사(6.6배)하여 제작하였다. 본 제작방법은 저렴한 비용으로 100%에 가까운 fill-factor를 얻을 수 있고, 비구면 렌즈를 구현하기가 쉽다는 장점을 가진다.

• 신재생에너지
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• 제2권3호
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.