• 한국표면공학회지
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• 제44권5호
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• pp.220-225
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• 2011

304 stainless steel plate was colored by hot dip and electrochemical treatment in a solution containing sulphuric and chromic acids. In the process, treatment variables such as operating time and methode were changed. The surface characteristics that changed by the treatment of the samples such as surface composition, oxide film thickness, color, surface roughness and reflectivity were studied. Surface composition was varied as follows. Fe was decreased, but Cr and O were increased. Ni was increased until 20 min, but reveals decreasing tendency as time passed after that. These means the surface film becomes chrome rich oxide phase as the treatment times increase. The thickness of film was about 220 nm at 30 min by dip treatment and it reduced as the treatment times increased. On the other hand, the thickness was about 150 nm at 10 min by electrochemical method and it doesn't increased with time. Surface color changed from metallic white of the base plate to gray, black, red, and green-blue, gradually, as the treating time increased. The reflectivity of colored surface measured by UVVIS-NIR spectrophotometer was reduced from max 38% of basis metal to min 3.5%.

• 한국세라믹학회지
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• 제39권9호
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• pp.896-901
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• 2002

FHD(Flame Hydrolysis Deposition)공정은 화염 형성에 관여하는 장비의 조건들과 그에 따른 다양한 공정인자에 의하여 박막의 조성이 결정되며, 증착된 막을 치밀화하는 첨가물의 증발로 인해 열처리공정에서 조성이 변화되므로 공정인자로부터 최종적인 광도파막의 조성을 예측하는 것은 매우 어렵다. 본 연구에서는 FHD 공정에서 첨가가스의 유량을 제어하여 박막의 조성 및 광학적 특성을 예측할 수 있는 공정 분석의 기초자료를 제공하기 위하여 FTIR(Fourier Transformation Infrared Spectroscopy)측정과 ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry)측정을 통해 실리카 막의 조성분석에 대한 연구를 수행하였다. FTIR 흡수 스펙트럼을 통해 실리카 막에 존재하는 Si-O, B-O band를 측정하고 정성적 농도변화를 관찰 하였고, ICP-AES를 통해 Boron의 농도를 정량적으로 측정하였다. 이 두 결과로부터 FTIR을 이용한 정량적 조성분석의 기초자료인 B-O band의 흡광계수를 구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.19-27
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• 2003

Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.557-558
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• 2006

The mechanical properties of micro-hardness and internal stress of Ni-Fe alloy thin film made by electrodeposition method have been measured as a function of bath composition and current density. And also the microstructure of $200{\AA}$ Ni-Fi nanowires made using anodic aluminum oxide(AAO) templates by electrodeposition method have been observed by SEM as a function of ultrasonic treatment time and bath composition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• 한국표면공학회지
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• 제22권4호
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• pp.161-167
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• 1989

Effects of bath composition on electroless deposition of Ni-W-B from sulphate solution were invesrigated in terms of deposition kinetics, electro resistivity and composition of deposit film. The microstruigated and crystataine structure of the films were also studied using a scanning electron microscope and X-ray diffractometer. The deposition rate increased linearly with increasing the concentration of nickel sulphate in bath solution, wheras the rate decreasing with sodium citrate. The rate was also affected by sodium tungstate, which was maaximum at the concentration of 0.06 M/1 in sodium tungstate, The content of W in the deposit increased with increased with increasing the sodium citrate had on opposite effect on the composition of W and B in the deposit. The crystal change film from armorphous to cryatallicne nature by heat treatments was proved by the reduction of specific resistance and X-ray diffration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.284-284
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• 2013

중 에너지 이온 산란 분석법(Medium Energy Ion Scattering Spectrometer, MEIS)은 50~500 keV로 이온을 가속 후 시료에 입사시켜 시료의 원자와 핵간 충돌로 산란되는 일차이온의 에너지를 측정하여 시료를 분석하는 기법으로, 원자층의 깊이 분해능으로 초박막의 표면 계면의 조성과 구조를 분석 할수 있는 유용한 미세 분석기술이다. 본 실험에서 에너지 70~100 keV의 He+ 이온을 사용하여 Pulse Width 1 ns의 Pulsed ion beam을 만들어 Start 신호로 사용하고 Delay-line-detector에 검출된 신호를 End 신호를 이용한 TOF-MEIS System을 개발하였다. 활용 가능한 분석시편으로 Ultra thin film 시편으로 1, 1.5, 2, 2.5, 3, 4 nm의 HfO2, 1.8, 4nm의 SiO2 시편을 분석 하였으며 Ultra Shallow Junction 시편으로 As Doped Si, Cs Doped Si 시편 및 Composition, Core/shell 구조의 Q-dot 시편으로 CdSe, CdSe/ZnS등 다양한 분석 실험을 진행 하였다. Composition, Core/shell 구조의 Q-dot 시편은 Diamond Like Carbon(DLC)의 Substrate에 Mono-layer로 형성하여 분석하였다.

• 대한의생명과학회지
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• 제28권1호
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• pp.50-57
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• 2022

In this study, we tried to examine the possibility of developing a dental product such as tooth decay prevention and oral hygiene by manufacturing a natural polymer film for oral use. Natural polymer films were prepared from shark byproduct extract (SBE) and gellan gum (GG). As an antibacterial substance, the antibacterial activity of green tea extract against tooth decay-causing bacteria was measured. An film was prepared by adding green tea extract to the composition of SBE and GG. The mechanical, solubility, moisture content and antibacterial function of the prepared film were investigated in detail. Also, the incorporation of GTE into the SBE/GG film improved the physical performance of the film. Increasing the content of GTE improved the antioxidant and antibacterial properties of the film. Formulation of antimicrobial SBE/GG film containing green tea extract was established and these results evidently showed potential for cavity prevention products application.

• 폴리머
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• 제38권6호
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• pp.801-808
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• 2014

광경화 아크릴고분자 필름에서 이온이동에 관한 연구를 하였다. 고분자에 결합된 아민기와 카르복실산 작용기의 함량을 조절하여 수소이온과 수산화이온의 이동에 적합한 필름을 제조하였다. 수소이온 이동 검출을 위해 p-methylred(PMR) 유도체를 사용하였고 수산화이온 검출을 위해 페놀프탈레인 유도체를 합성하여 각각 고분자에 도입하였다. 수소이온의 이동은 아민기의 함량이 많을수록 빠르게 진행되었고 수산화이온은 카르복실산의 함량이 높을수록 빠르게 이동하였다. 수소이온 이동은 필름표면과 내부로 빠르게 진행하였고 PMR 포함 필름의 흡수스펙트럼을 통해 관찰되었다. 산 용액에 감응하는 필름을 사용하여 색상변화의 가역성을 관찰하였고 연속 50회를 실시하는 동안 정확히 재현되었다. 구리(II) 이온은 카르복실산 작용기의 함량이 높은 필름에서 빠르게 이동하였다. 로다민이 도입된 필름에서 구리이온의 배위로 로다민의 고리열림 반응이 진행되었고 광흡수 및 발광특성 측정을 통해 구리이온의 이동을 추적하였다.

• 한국재료학회지
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• 제29권3호
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.