• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.89-94
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• 1996

Aluminum and zinc titanium silicate sol-gel films were fabricated for application of waveguide and the effect of additions of ZnO and $Al_2O_3$ to binary titanium silicate films was investigated. During firing, the films are densified as they shrunk and their refractive index increases in the range of 1.58-1.83 depending on the film composition. The attenuation of the waveguides is not sensitive to changes in composition except for zinc titanium silicate waveguides which have substantially higher attenuation. However, the increase in the attenuation with aging of the waveguides depend upon the composition of waveuides. The addition $Al_2O_3$ or the reduced $SiO_2$ content in the composition appears to slow the deterioration of the waveguides due to the formation of more stable bonds and increased acidity on the film surface. Also, the wavelength dependence of the attenuation of the waveguides varies with composition. The attenuation of the waveguides except for the $65SiO_2{\cdot}35TiO_2$ composition are not Rayleigh scatter limited, suggesting the absorption loss of the waveguides due to the effects of residual carbon and structural defects in the films.

• Archives of Pharmacal Research
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• v.19 no.1
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• pp.1-5
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• 1996

Laminated films composed of drug-containing reservoir layer and drug-free membrane were prepared. Zero-order drug release with lag time was achieved by laminating drug-free film onto the reservoir layer, while burst effect was observed on cast-on film. The rate controlling membrane was either attached to or cast directly into the reservoir. The release rate was independent on the reservoir composition but dependent on the composition of rate-controlling membrane. In growth inhibitory test of cephalexin from Eudragit RS film to Streptococcus Mutans, the disk even after release test for 72 hours showed more bacterial growth inhibition than that of control. Permeation of drug through rat skin was proportional to the HPC fraction in the film. We could control the release of cephalexin from the film by changing the fraction of Eudragit RS, HPC and DEP content. Consequently, Eudragit RS/HPC film was found to be very effective system for local delivery of drugs.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.88-92
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• 2015

In order to study the semi-conductive characteristics of carbon black-filled ethylene-propylene-diene monomer (EPDM) composite film, which is used for measuring occlusal force, composite samples with volume ratios of carbon black to EPDM ranging from 30% to 70% were prepared. The process of making a composite film consists of two steps, which involve the preparation of a slurry composition and the fabrication of a thin film using solution casting and a lamination process. To prepare the slurry composition, we dispersed carbon black nanoparticles into an organic solvent before mixing with an EPDM solution in toluene. The mechanical and electrical properties of the resulting carbon black-filled EPDM film were then investigated, and the results showed that the electrical resistance of a film decreases with the increase in the carbon black content. Furthermore, improved elastic recovery was observed after cross-linking the EPDM.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.230-236
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• 2022

The formation behavior of a passive state film on the surface of STS304 in electrolytic solution was analyzed to determine its metallic ion composition. The properties of passive state films vary depending on the Fe and Cr ions in the electrolytic solution. It was observed that the passive state film surface became flat and glossy as the concentration of Fe and Cr ions in the electrolytic solution increased. The corrosion resistance property of the passive state film was proportional to the amount of Fe and Cr in the electrolytic solution. An initial passive state film with high Fe concentration was formed on the surface of STS304 during early electrolytic polishing. Osmotic pressure of Fe ions occurs between the passive state film and electrolytic solution due to the Fe ion concentration gradient. The Fe in the passive state film is dissolved into the electrolyte, and Cr fills up the Fe ion vacancies. As a result, a good corrosion-resistant floating film was formed. The more Fe ions in the electrolytic solution, the faster the film is formed, and as a result, a flat passive state film containing a large amount of Cr can be formed.

• Journal of Pharmaceutical Investigation
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• v.20 no.2
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• pp.89-95
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• 1990

Ethylcellulose-PEG 4000 film coated on core tablets was investigated as a potential drug delivery system for the controlled release of chlorpheniramine maleate (CPM). The kinetic analysis of the release data indicated that CPM release followed a diffusion-controlled model, where the quantity released per unit area is proportional to the square root of time. The effect of the film composition, CPM concentration, plasticizer concentration and CPM solubility on the release characteristics were examined. The release rate constant increased as CPM concentration increased. It also increased as the PEG 4000 content in the film increased above 10%(w/w), however, it decreased as the PEG 4000 content increased in the concentration range below 10%(w/w). The release rate constant was not affected by the coated weight on the core tablet. The film-coated tablets which contain CPM only in the coated film layer seemed to be a potential oral drug delivery system for the controlled release of CPM.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.135.3-135
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• 1998

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.670-676
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• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.