• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.115-115
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• 2011

고성능 금속 커패시터 개발을 목적으로 aluminum film에 균일한 etch fit를 형성하는 연구를 진행하였다. Etch mask로 PI를 사용하여 Aluminum film에 균일한 형태의 etch fit를 형성하였다. 균일하게 에칭 된 aluminum film들은 capacitance를 측정하여 에칭 조건에 따른 capacitance 변화를 확인하였다.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.2-143.2
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• 2016

The influence of electric field on CO adsorbed on Pt(111) was investigated with reflection-absorption infrared spectroscopy (RAIRS) in ultrahigh vacuum system. The ice film capacitor method was used to apply electric field to the amorphous ice film with CO on Pt(111). Two systems were compared by measuring the change of the CO stretching vibrational mode under applied electric field; one is CO on Pt(111), and the other is CO buried inside an ice film on Pt(111). By comparing them, we were able to calculate the additional effect of adsorption of CO on Pt(111) on peak shift. The CO adsorbed on Pt(111) has shown larger peak shift than CO adsorbed with H2O when we applied stronger electric field. Additionally, the differences were observable when the applied electric field exceeds $1{\times}10V/m^8$.

• Textile Coloration and Finishing
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• v.31 no.2
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• pp.65-76
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• 2019

A multi-point touch input sensor having different sizes or different capacitance touch points connected by only one pair of signal transmission lines was fabricated using a polyimide film coated with a thin copper plate. The capacitance increases with the decrease in the number of sheets of fabric spacers placed between the two sheets of the polyimide film. Therefore, the touch input sensor could be manufactured without fabric spacers, which was possible by the action of the polyimide film as a dielectric material in the capacitor. On the multi-point touch sensor, higher capacitance was obtained when pressing wider-area touch points with 10mm to 25mm diameter on average. However, the capacitance of a system comprising two sheets of touch sensors was considerably low, causing a serious overlap of the capacitance values according to the data collected from the reliability test. Although the capacitance values could be increased by stacking several sheets of touch sensors, the overlap of data was still observed. After reducing the size of all touch points to 10mm and stacking up to eight sheets of sensors, reliable and consistent capacitance data was obtained. Five different capacitance signals could be induced in the sensors by pushing touch points simultaneously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.628-636
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• 1998

LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1550-1559
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• 2013

Light emitting diode(LED) lighting has been applied various industry fields because of its high efficiency, low power consumption, long life time, and environment friendly characteristics. Generally, LED lighting needs a driver to maintain constant current. Most popular driver is the switching converter. In the converter, there are several electrolytic capacitors. However the lifespan of the electrolytic capacitor is much shorter than LED. Therefore the lifespan of LED lighting with electrolytic capacitor is decreased. Also, LED lighting needs dimming control because of various needs and energy saving. This paper presents the dimmable single-stage PFC DCM flyback converter without electrolytic capacitor and parallel LC resonant filter for reducing 120[Hz] ripple on the output. The type 2 controller is used to maintain constant current and the analog dimming control is used. The proposed converter is verified through simulation and experimental works.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1133-1138
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• 2005

In this study, we have prepared, as the pluse power source, a commercially supplied Li-ion battery with a capacity of 700 mAh and AC resistivity of 60 md at 1 kHz and nonaqeous asymmetric hybrid capacitor composed of an activated carbon cathode and MCMB anode, and have examined the electrochemical characteristics of hybrid capacitor and the pulse performances of parallel connected hybrid capacitor/Li-ion battery source. The nonaqueous asymmetric hybrid capacitors constituted with each stack number of pairs composed of the cathode, the porous separator and the anode electrode were housed in Al-laminated film cell. The 10 stacked hybrid capacitor, which was charged and discharged at a constant current at 0.25 $mA/cm^2$ between 3 and 4.3 V, has exhibited the capacitance of 108F and the lowest equivalent series resistance was 32 $m{\Omega}$ at 1 kHz. On the other hand, the enhanced run time of Li-ion battery assisted by the hybrid capacitor was obtained with increasing of current density and pulse width in Pulse mode. The best improvement, $84\;\%$ for hybrid capacitor/Li-ion battery was obtained in the condition of a 7C-rate pulse (100 msec)/0.5C-rate standby/$10\;\%$ duty cycle.