• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.147-149
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• 2002

Recently, the study on development of electrical and electronic device is done to set miniature, high degrees of integration and efficiency by using inorganic materials the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.195-196
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• 2005

In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[$\Omega/sq.$] was 4.5 & 4.0, the film stress[dyne/cm 2] of 1.09e10 & 1.075e10 on l'st and 2'nd process. I could achieved the superior MOS characteristics by 2'nd silicidation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1184-1187
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• 2003

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. We established Process Parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured CNFs electrodes using controlled solution chemistry. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.119-132
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• 2024

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.11-17
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• 2002

Polymer/ceramic composite is of great interest as a dielectric material for embedded capacitors. This paper is concerned in the effects of $BaTiO_3$ particle size on epoxy/$BaTiO_3$ composite films for embedded capacitors. 6 different size powders smaller than 1 $\mu\textrm{m}$ in diameter and bisphenol-A type epoxy were used for this experiment. Dielectric constant of the epoxy/$BaTiO_3$ composite capacitors increases as the powder size increases at the same powder loading, which is due to the increase of tetragonality of the powders as particle size increases. And leakage current of the capacitors also increases dramatically as the powder size increases. It was explained that this is due to the decrease of the number of $BaTiO_3$epoxy/$BaTiO_3$ potential barriers per unit length and, moreover, the enhancement of potential barrier lowering effects caused by increase of potential drop per one barrier. As a result, there is tradeoff between high dielectric constant and low leakage current in the epoxy/$BaTiO_3$ composite capacitors. So it is important to select proper size $BaTiO_3$ powders in accordance with needs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.362-370
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• 2010

In this paper, a compact RF Front-end module for Wireless Fidelity(Wi-Fi) and Worldwide Interoperability for Microwave Access(WiMAX) applications is realized by low temperature co-fired ceramic(LTCC) technology. The RF Front-end module is composed of three LTCC band-pass filters, a Film Bulk Acoustic Resonator(FBAR) filter, fully embedded matching circuits, an SPDT switch for mode selection, an SPDT switch for Tx/Rx selection, and an SP4T switch for band selection. The parasitic elements of 0.2~0.3 pF are generated by the structure of stacking in the top pad pattern for DC block capacitor of SPDT switch for mode selection. These kinds of parasitic elements break the matching characteristic, and thus, the overall electrical performance of the module is degraded. In order to compensate it, we insert a parallel lumped-element inductor on capacitor pad pattern for DC block, so that we obtain the optimized performance of the RF Front-end module. The fabricated RF front-end module has 12 layers including three inner grounds and it occupies less than $6.0mm{\times}6.0mm{\times}0.728mm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.