• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.717-720
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• 2007

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.257-260
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• 2007

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.602-607
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• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.335-336
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• 2007

A new current-programmed pixel circuit for activematrix organic light emitting diodes (AMOLEDs), based on Organic TFTs (OTFTs), is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel circuit, which is a current mirror structure consisting of five Organic TFTs and one capacitor, has reliable linear characteristics between input current and output OLED current. Also, the threshold voltage degradation of Organic TFTs due to long time operation stress is well compensated to reliable values.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.421-422
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• 2015

Nowadays, bidirectional DC-DC converters are becoming more into picture for different applications especially electric vehicles. There are many bidirectional DC-DC converters topologies; however, voltage-fed Dual Half-Bridge (DHB) topology has less number of switches as compared to other isolated bidirectional DC-DC converters. Furthermore, voltage fed DHB has galvanic isolation, high power density, reduced size, high efficiency and hence cost effective. Electrolytic capacitors always have problem regarding size and reliability in DC-AC single phase inverters. Therefore, voltage-fed DHB converter is proposed for the purpose of power decoupling to replace electrolytic capacitor by film capacitors. A new control strategy has been developed for 120Hz ripple rejection, and it was verified by simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.474-475
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• 2007

The $Sr_{0.8}Bi_{2.2}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The aging properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The dielectric constant and leakage current density with Pt electrode is 340 and $6.81{\times}10^{-10}\;A/cm^2$ respectively. The maximum remanent polarization and the coercive electric field with Pt electrode are $12.40{\mu}C/cm^2$ and 30kV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.969-971
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• 2005

본 논문에서는 전력용 차단기의 성능 평가시험용 설비인 간이합성시험설비의 안전성과 신뢰성을 향상시키기 위해 새롭게 설계 및 제작하여 성능평가시험을 통해 개발한 고역전압율을 가진 자기소호형 필름콘덴서를 소개하고, 이것을 적용한 새로운 간이합성시험설비용 전류원 콘덴서뱅크 구조를 제안하고자 한다.

• Journal of Electrochemical Science and Technology
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• v.9 no.4
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• pp.301-307
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• 2018

The current study fabricated magnetic functional reduced graphene oxide (MFRGO) by relying on ${FeCl_4}^-$ magnetic anion confined to cationic 1-methyl imidazolium. Furthermore, for improving the electrochemical performance of conductive polymer, hybrid poly ortho aminophenol (POAP)/ MFRGO films have then been fabricated by POAP electropolymerization in the presence of MFRGO nanorods as active electrodes for electrochemical supercapacitors. Surface and electrochemical analyses have been used for characterization of MFRGO and POAP/ MFRGO composite films. Different electrochemical methods including galvanostatic charge discharge experiments, cyclic voltammetry and electrochemical impedance spectroscopy have been applied to study the system performance. Prepared composite film exhibited a significantly high specific capacity, high rate capability and excellent cycling stability (capacitance retention of ~91% even after 1000 cycles). These results suggest that electrosynthesized composite films are a promising electrode material for energy storage applications in high-performance pseudocapacitors.