• 전기화학회지
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• 제3권4호
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• pp.235-240
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• 2000

고출력 전기화학 캐패시터를 위한 전극제조공정으로 screen printing과 doctor blade법이 연구되었다. Screen printing에 의해서 제작된 비정질 $MnO_2$전극으로 측정된 CV (cyclic voltammogram)는 이상적인 캐패시터에 가까운 특성을 보여주었다. 50mV/s의 scan rate에서의 CV로부터 계산된 비용량은 $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$의 전극두께에 대해서 각각 5.8F/g과, 81.8F/g, 172.0F/g의 값을 나타내었다. Screen printing전극에서의 $MnO_2$활물질의 이용율을 $100\%$로 하였을 때, paste와 doctor blade법의 이용율은 각각 $3.4\%$와 $47.6\%$이었다. Screen printing은 고출력 응용을 위한 얇은 전극의 코팅 방법으로 우수한 특성을 보였다.

• Elastomers and Composites
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• 제47권4호
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• pp.292-296
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• 2012

폴리비닐알콜, 규소텅스텐산, 인산 및 수용액으로 구성된 $80{\mu}m$의 두께의 고분자겔 전해질 필름을 제조하여 활성탄소계 전기이중층 케페시터를 제조하였다. 제조한 고분자겔 전해질 필름은 상온에서 $10^{-2}S\;cm^{-1}$의 높은 이온전도도를 나타내었으며, 본 전해질 필름을 적용한 활성탄소계 전기이중층 케패시터는 100 mV/s에서 $58F\;g^{-1}$의 높은 캐패시턴스 특성과 우수한 수명특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국전자통신학회논문지
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• 제12권5호
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• pp.791-796
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• 2017

본 연구에서는 DRAM 커패시터의 유전막 박막화를 위한 Load Lock(L/L) LPCVD 시스템을 이용한 적층형 커패시터의 제조 공정이 셀 커패시턴스에 미치는 영향을 조사하였다. 그 결과 기존의 non-L/L 장치에 비하여 약 $6{\AA}$의 산화막 유효두께를 낮춤으로 커패시턴스로 환산 시 약 3-4 fF의 차이가 나타남을 확인할 수 있었다. 또한 절연막으로써 질화막 두께의 측정 범위가 정상적인 관리 범위의 분포임에도 불구하고 Cs는 계산치보다 약 3~6 fF 정도 낮은 것으로 확인되었다. 이는 node poly FI CD가 spec 상한치로 관리되어 셀 표면적의 감소를 초래하였고 이는 약 2fF의 Cs 저하를 나타내었다. 따라서 안정적인 Cs의 확보를 위해서는 절연막의 두께 및 CD 관리를 spec 중심값의 10 % 이내로 관리할 필요가 있음을 확인하였다.

• 한국정보통신학회논문지
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• 제9권7호
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• pp.1491-1496
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• 2005

[ $Pb_{0.72}La_{0.28}TiO_3$ ] (PLT(28)) 박막을 sol-gel 법을 이용하여 제작한 후, 그 특성을 조사하여 ULSI DRAM 의 캐패시터 절연막으로서의 적용 가능성을 연구하였다. Sol-gel 법의 출발 물질로는 acetate 계를 사용하였다. TGA-DTA 분석을 통하여 PLT(28) 박막의 sol-gel 법에 의한 공정 조건을 확립하였다. 매 coating 후 $350^{\circ}C$ 에서 drying 하고, 마지막으로 $650^{\circ}C$ 에서 annealing 하여 $100\%$ perovskite 구조를 가지는 치밀하고 crack 이 없는 PLT(28) 박막을 얻었다. $Pt/Ti/SiO_2/Si$ 기판 위에 PLT(28) 박막을 형성하여 전기적 특성을 측정하였다. 그 결과 유전 상수와 누설전류밀도가 각각 936 과 $1.1{\mu}A/cm^2$ 으로 측정되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.801-803
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• 1998

We investigated Pt and $RuO_2$ as a bottom electrode and PZT thin film for ferroelectric applications. XRD examination shows that a mixed phase of (111) and (200) Pt peak for the temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for the substrate temperature of $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$, 80 W for the Pt bottom electrode growth. From the study of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with $0{\sim}5%$, a mixed phase of Ru and $RuO_2$ for $10{\sim}40%$, pure $RuO_2$ at 50%. Having optimized the bottom electrode growth conditions, we employed two step process in PZT film capacitor: PZT film growth at the low substrate temperature of $300^{\circ}C$ and then post RTA anneal treatments. PZT films were randomly oriented on $RuO_2$ and (110) preferentially oriented on Pt electrode. Leakage current density of PZT film demonstrated two to three orders higher for $RuO_2$ bottom electrode. From C-V results we observed a dielectric constant of PZT film higher than 1200. This paper presents the optimized process conditions of the bottom electrodes and properties of PZT thin films on these electrodes.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.