• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.381-386
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• 2011

This paper presents the design and reliability evaluation of metallized film capacitor for power e lectronics application. The rated voltage of development capacitor is DC 3300[V], the capacitance is 5 ${\mu}F$ and the ripple current capability is 130 $A_{rms}$. Film metallization and patterns are an important design factor that has been development enhance the electric and reliability properties of film capacitor for power electronics. In term of capacitor construction and metallized pattern is one of the parameters that can be modified to further improve the rating in the terms of maximum ripple current and lifetime. This capacitor can be used as snubber capacitor application such as power train invertor system.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.528-531
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• 1994

Digitalization in electronic system is required the capacitor which have a large capacitance with small size, low impedance at high frequency, and high reliability. The fabrication and its properties of aluminum solid electrolytic capacitor are investigated. Employing conduction polymer film such as, polypyrrole as solid electroylte, solid type aluminum electrolytic capacitors were made. The surface of insulationg oxide is covered with conducting polymer layer prepared by chemical oxidative polymerization. Thereafter this conducting layer is covered with conducting polymer prepared by electrochemical polymerization. The dielectric properties of these capacitors were also measured and discussed. Regarding on frequency characteristics of the trial made capacitor, impedance and ESR at high frequency is lower than those of the stacked type film capacitor. It is alo confirmed that temperature coefficient of capacitance and dissipation factor of the capacitor are lower than those of film capacitor and liquid type aluminum electrolytic capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.277-280
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• 1995

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB mettled has known as main technology of information society in 21C, because it is nut only free oriention and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properities of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analizing rind measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically rind experimentally its possibility in range of 10Hz∼ 1MHz through its frequency characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.244-247
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• 1996

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB method has known as main technology of information society in 21C, because it is not only free orientation and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properties of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analyzing and measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically and experimentally its possibility in range of 10Hz∼lMHz through its frequency characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.73-78
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• 1991

In this study of stacked type film chip capacitor, the important parameters are heat-treated temperature, pressure and time. We measured the temperature dependence of dielectric properties and dissipation factor and the frequency dependence of dielectric properties, dissipation factor, ESR(Equivalent Series Resistance) and impedance in stacked type film capacitor. As a result, the best conditions of heat-treated temperature, pressure and time were proved to be 130$^{\circ}C$, 10kg/$\textrm{cm}^2$ and 3hrs, respectively.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.53-54
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• 2012

본 논문에서는, 전기 자동차용 인버터의 DC Link에 사용되는 Film Capacitor의 최적 용량 선정 방법을 제시한다. 이를 위해 Film Capacitor의 동작 온도에 따른 기대수명, 전류 내량, 전압 내량 등을 고려하며, 실제 적용사례를 들어 검증한다.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.860-865
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• 2006

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.42-48
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• 2020

As global warming accelerates, eco-friendly electric cars are being developed to reduce carbon dioxide emissions, and power conversion inverters are used to drive motors. Among inverter components, DC-link capacitor is heated by high current usage, which causes problems such as performance and life-saving of inverter. Although metal cases with good thermal performance have been used to solve this problem, it is difficult to apply them in practice due to insulation problems with other parts. In this paper, the Heat-Generation influence factor of DC-link capacitor is analyzed. Variables on heat-generation are set at 3 levels for film width, inductance, and film thickness. Box-Behnken to 13 tests using the design and minimal deviations, e.g. through the experiment three times by each level. The surface of the film k type by attaching the sensor current is measured temperature. Capacitance was set to a minimum level of 200 ㎌ and had a frequency of 16 kHz with Worst case, ambient temperature of 85℃ and a ripple current of 50 Ams was applied. The temperature at the measurement point was collected in the data logger after sampling at 1 minute intervals for 2 hours after saturation with the ambient temperature. This experiment confirmed that setup factors are correlated with heat-generation.