• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.257.1-257.1
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• 2014

We investigated characteristics of ITO/Ag-Pd-Cu (APC)/ITO multilayer electrodes prepared by direct current magnetron sputtering for use as an anode in organic solar cells (OSCs). To optimize electrical properties of ITO/APC/ITO multilayer, we fabricated the ITO/APC/ITO multilayer at a fixed ITO thickness of 30 nm as a function of APC thickness. Compare to the surface of Ag layer on ITO, the APC had a smooth surface morphology. At optimized APC thickness of 12 nm, the ITO/APC/ITO multilayer exhibited a sheet resistance of $6{\Omega}/square$ and optical transmittance of 84.15% at a wavelength of 550 nm which is comparable to conventional ITO/Ag/ITO multilayer. However, the APC-based ITO multilayer showed a higher average transmittance in a visible region than the Ag-based ITO multilayer. The higher average transmittance of ITO/APC/ITO multilayer indicated the multilayer is suitable anode for organic solar cells with P3HT:PCBM active layer. OSCs fabricated on the optimized ITO/ACP/ITO multilayer exhibited a better performance with a fill factor of 64.815%, a short circuit current of $8.107mA/cm^2$, an open circuit voltage of 0.59 V, and power conversion efficiency (3.101%) than OSC with ITO/Ag/ITO multilayer (2.8%).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.649-653
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• 2010

In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

• Journal of Information Technology Services
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• v.15 no.1
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• pp.113-129
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• 2016

Recently, as Information System projects tend to be more complex, the importance of Information System Audit increases. In the same context, the need for the resident IS Audit also increases, which is supposed to deal with the possible risks and urgent issues by providing the appropriate support and timely coordination during IS project. Basically, for the effective IS Audit, the IS audit team members should be able to understand such a business context as work characteristics, business knowledge, goals, and culture of the organization. The audit team members should also be able to share the various knowledge of Information Technology and audit procedure with the owner of the project. Especially, for the resident audit, it is more important to fill the gaps in expertise between project owner and audit team. However, any studies on the need of common knowledge base (knowledge complementarities) in the IS audit have not been done so far. The purpose of this study is to analyze whether the knowledge complementarity based on inter-organizational communication between the project owner and audit team members makes an effect on the fidelity and performance of IS audit. In order to do this, the relationship among inter-organizational communication and knowledge complementarity, the fidelity of IS audit service, and performance of IS audit has been analyzed, using Structural Equation Model. The result shows that all the relationship is significant, which means that knowledge complementarity between the two different interest groups should be an effective factor on the fidelity and performance of IS audit. This result implies that, for better quality of IS Audit service, how to acquire the knowledge complementarity between the project owner and Audit team should be considered seriously as well as systematically in the process of IS Audit.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• Journal of Korean Society on Water Environment
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• v.28 no.6
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• pp.917-922
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• 2012

In order to improve applicability of a microbial fuel cell the laboratory-scaled study has been performed by adopting an air-cathode MFC system with high concentrated anaerobic slugies in this study. The concentrations of microbes are grouped into three types, Type A (TS 1.7%), Type B (TS 1.1%) and Type C (TS 0.51%). The open circuit voltage $(V_{oc})$ characteristics showed that the medium microbes concentration of 1.10% (Type B) kept a constant voltage of 1.0 V for 150 hours, which showed the longest time among three types (Type A and Type C). The discharge charge curves for a closed circuit with $500 \Omega$ also showed that Type B generated a stable discharge voltage of 0.8 V for a longer time as in the open circuit voltage case. This could be explained by the relatively large amount of the attached microbes. Under the $V_{oc}$condition the COD removal efficiency of Type B was found to be low for a long time, but those of Type A and C were found to be high for a short period of time. Therefore, the suspended microbes could decrease the coulombic efficiency. It was concluded that the high $V_{oc}$ was caused by low COD and the $V_{oc}$ became low after the COD removal. The COD reduction resulted in an unstable and low working voltage. From the polarization characteristics Type A was found to show the highest power density of $193\;mW/m^2$ with a fill factor of 0.127 due to the relatively high remaining COD even after the MFC reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Journal of Powder Materials
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• v.23 no.2
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• pp.95-101
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• 2016

Carbon nanofiber (CNF) composites coated with spindle-shaped $Fe_2O_3$ nanoparticles (NPs) are fabricated by a combination of an electrospinning method and a hydrothermal method, and their morphological, structural, and chemical properties are measured by field-emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. For comparison, CNFs and spindle-shaped $Fe_2O_3$ NPs are prepared by either an electrospinning method or a hydrothermal method, respectively. Dye-sensitized solar cells (DSSCs) fabricated with the composites exhibit enhanced open circuit voltage (0.70 V), short-circuit current density ($12.82mA/cm^2$), fill factor (61.30%), and power conversion efficiency (5.52%) compared to those of the CNFs (0.66 V, $11.61mA/cm^2$, 51.96%, and 3.97%) and spindle-shaped $Fe_2O_3$ NPs (0.67 V, $11.45mA/cm^2$, 50.17%, and 3.86%). This performance improvement can be attributed to a synergistic effect of a superb catalytic reaction of spindle-shaped $Fe_2O_3$ NPs and efficient charge transfer relative to the one-dimensional nanostructure of the CNFs. Therefore, spindle-shaped $Fe_2O_3$-NP-coated CNF composites may be proposed as a potential alternative material for low-cost counter electrodes in DSSCs.

• Journal of Sensor Science and Technology
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• v.14 no.4
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• pp.272-277
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• 2005

A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.