• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.6-9
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• 2002

Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

• Journal of Positioning, Navigation, and Timing
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• v.9 no.3
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• pp.191-205
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• 2020

Designing a new signal is essential in the development of a new Radio Navigation Satellite Service (RNSS) system. This paper introduces the signal design parameters and the figures of merit (FoMs) to be considered in designing a new RNSS signal, and then reviews their relationship in details. In addition, we show examples of the trade-off analysis between FoMs according to the signal design scenarios using an analytical simulation tool based on the relationship between the signal design parameters and the FoMs.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.215-218
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• 2015

A pyroelctric properties of Ni(x)-doped PMNT systems were analyzed. Modified PMNT samples were prepared using the columbite structure method. Pyroelectric current, polarization, dielectric constant and dissipation factor of Ni-doped PMNT samples were measured as a function of temperature. By adding a small amount of NiO, pyroelectricity of PMNT is increased. Unlike the normal $ABO_3$ ferroelectric, Ni-doped PMNT showed properties for relaxor ferroelectric of causing the successive phase transition over a wide temperature. The optimum conditions for obtaining compositions with improvement ferroelectric properties are a nominal addition of 0.02 mole% Ni. Also, Ni-doped PMNT ferroelectric showed excellent pyroelectric figures of merit in the vicinity of room temperature. The pyroelectric coefficient ($0.00524C/m^2K$ at $25^{\circ}C$) and figures of merit ($F_v{\sim}0.039m^2/C$ and $F_d{\sim}0.664{\times}10^{-4}Pa^{-1/2}$) of composition PMNT with 0.02 mole% Ni are comparable to the earlier reports on lead-type pyroelectrics.

• Journal of Positioning, Navigation, and Timing
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• v.11 no.4
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• pp.341-349
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• 2022

When designing a new RNSS signal, the performance analysis for the legacy signal providing the same service, is required to determine the performance requirements. However, there are few studies on the secured service (SS) signal performance analysis, and the waveform is the only published information on the signal design component of the SS signal. Therefore, in this paper, we introduce several figures-of-merit (FoMs) that can be used for performance analysis in terms of the waveform. And then, we calculate the FoMs, such as autocorrelation main peak to secondary peak ratio (AMSR), spectral efficiency, Gabor bandwidth, multipath error, and jamming resistance quality factor, for the existing SS signals and discuss the analysis results. Finally, we conclude that the superior waveform for each FoM is different, and that the consideration of the trade-off relationship between the FoMs is required for waveform design.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.1
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• pp.1-11
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• 1997

We examine the DS/SSMA system which is employing coherent BPSK with RAKE receiver. We adop Nakagami m-distribution as a multipath fading model. First, we analyze the performances of the system in the single cell environment and obtain the other-cell interference according to power control error. And considering the other-cell interference into the analysis of single cell system, we examine the cellular CDMA network. The average BER and outage probability are the figures of merit that characterize the system performance. The required BER, 1E-3, and required outage probability are the figures of merit that characterize the system performance. The requeired BER, 1E-3, and required outage probability, 1% for the voice transmission is considered to acquire the capacity of system.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.530-534
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• 2017

The figures of merit in the on-resonance and off-resonance conditions ($FOM_{on}$ and $FOM_{off}$) for the piezoelectric energy harvester (PEH) were measured and compared in $[(K_{0.485}Na_{0.515})_{1-X}Li_X](Nb_{0.99}Ta_{0.01})O_3$ (x = 0.04 ~ 0.09) (KNLNT) ceramics with various Li contents. The crystal structure of CuO-doped KNLNT ceramics changes from orthorhombic to tetragonal around the Li fraction of 0.065. The stable temperature range for the tetragonal phase widens to both higher and lower temperatures as Li is substituted. The piezoelectric charge constant ($d_{33}$), electromechanical coupling factor ($k_p$) and mechanical quality factor ($Q_m$) have maximum values at the Li fraction between 0.055 and 0.065 where the phase boundary lies between the orthorhombic and tetragonal phases. Both $FOM_{on}$ and $FOM_{off}$ have peak values around the phase boundary but the peak compositions are not exactly coincided. The optimal Li fraction in the KNLNT ceramic for a PEH application was found to be between 0.055 and 0.065.