• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.349-349
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• 2014

ITO는 결정질 실리콘 태양전지의 anti-reflection coating (ARC) 층으로써 적합한 물질이다. ARC layer로써 구조적, 전기적 그리고 광학적 최적 조건의 특성을 얻기 위해는 높은 figure of merit(FOM)를 가져야 하고 결정방향 제어를 해야 한다. 본 연구에서는 결정질 실리콘 태양전지에 가장 적합한 ITO ARC layer의 특성 찾기 위해 Radio frequency magnetron sputter를 이용하여 공정 조건가변 실험을 진행 하였으며 높은 FOM을 갖는 ITO 반사방지막을 shallow emitter형 결정질 실리콘 태양전지에 적용하였으며 ITO 박막은 shallow emitter층과 완벽한 ohmic 접합을 이루었다. ITO ARC layer를 적용한 Shallow emitter형 태양전지는 81.59%의 fill factor와 $35.52mA/cm^2$의 단락전류를 보이며 17.27%의 광변환 효율을 보였다.

• International Journal of Air-Conditioning and Refrigeration
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• v.6
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• pp.124-135
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• 1998

A thermodynamic cycle analysis is performed for refrigerator-precooled Linde-Hampson hydrogen liquefiers, including catalysts for the ortho-to-para conversion. Three different configurations of the liquefying system, depending upon the method of the o-p conversion, are selected for the analysis. After some simplifying and justifiable assumptions are made, a general analysis program to predict the liquid yield and the figure of merit (FOM) is developed with incorporating the commercial computer code for the thermodynamic properties of hydrogen. The discussion is focused on the effect of the two primary design parameters - the precooling temperature and the high pressure of the cycle. When the precooling temperature is in a range between 45 and 60 K, the optimal high pressure for the maximal liquid yield is found to be about 100 to 140 bar, regardless of the ortho-to-para conversion. However, the FOM can be maximized at slightly lower high pressures, 75 to 130 bar. It is concluded that the good performance of the precooling refrigerator is significant in the liquefiers, because at low precooling temperatures high values of the liquid yield and the FOM can be achieved without compression of gas to a very high pressure.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.3
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• pp.389-400
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• 1997

A thermodynamic cycle analysis is performed for refrigerator-precooled Linde-Hampson hydrogen liquefiers, including catalysts for the ortho-to-para(o-p) conversion. three different configurations of the liquefying system, depending upon the method of the o-p conversion, are selected for the analysis. After some simple and justifiable models are introduced, a general analysis program to predict the liquid yield and the figure of merit(FOM) is developed with incorporating the commercial computer code for the hydrogen properties. The discussion is focused on the effect of the two primary design parameters-the precooling temperature and the high pressrure of hydrogen. When the precooling temperature is in the range between 45 and 60 K, the optimal high pressure for the maximal liquid yield is found to be in the range between 100 to 140 bar, regardless of the o-p conversion. However, the FOM can be maximized at slightly smaller values of high pressures. It is remarkable to observe that the lower precooling temperatures are favorable since both the liquid yield and the FOM can be obtained without compressing hygrogen to extremely high pressures.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.47-52
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• 2017

In this paper, CMOS SAR A/D converter 1.8V supply for the design of an A/D converter having an middle speed for the biological signal processing was designed. This paper proposes design of a 10-bit SAR Analog to Digital Converter improving linearity driven by MSB node of C-DAC array divided into 4 equal parts. It enhances linearity property, by retaining the analog input signal charging time at MSB node. Because MSB node samples analog input, it enhances resolution through getting initial input signal precisely. By using split capacitor on C-DAC array, it reduced chip size and power dissipation. The Proposed SAR A/D Converter is fabricated in 0.18um CMOS and measured 7.5 bits of ENOB at sampling frequency 4MS/s and power supply of 1.8V. It occupies a core area of $850{\times}650um^2$ and consumes 123.105uW. Therefore it results in 170.016fJ/step of FOM(Figure of Merit).

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.11
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• pp.943-951
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• 2015

Inertial sensors are important components of navigation system whose performance and reliability can be improved by specific sensor arrangement configuration. For the reliability of the system, Fault Detection and Isolation (FDI) is conducted by comparing each signal of arranged sensors and many arrangement configuration were suggested to optimize FDI performance of the system. In this paper, multiple conic configuration is suggested with optimal navigation condition and its FDI performance is analyzed by established Figure Of Merit (FOM) under the condition for navigation optimality. From FOM comparison, the multiple conic configuration is superior to former one in point of FDI.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.54-59
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• 2007

In this paper, broadband voltage-controlled oscillator (VCO) using electronically controlled metamaterial transmission line based on varactor-loaded split-ring resonator (VLSRR) is presented. First, it is demonstrated that VLSRR coupled to microstrip line can lead to metamaterial transmission line with tuning capability. The negative effective permeability is provided by the VLSRR in a narrow band above the resonant frequency, which can be bias controlled by virtue of the presence of varactor diodes. The VCO with 1.8 V power supply has phase noise of $-108.84\;{\sim}\;-106.84\;dBc/Hz$ @ 100 Hz in the tuning range, $5.47\;{\sim}\;5.84\;GHz$. The figure of merit (FOM) called power-frequency-tuning-normalized (PFTN) is 20.144 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.961-966
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• 2009

In this paper, a novel voltage-controlled oscillator(VCO) using the metamaterial broadside coupled spiral resonators(BC-DSRs) is presented for reducing the phase noise. For reducing of the phase noise, the series spiral structures have been applied for the signal plane and ground plane at each in order to have the large coupling. Compared with the conventional VCO, the proposed VCO has the larger coupling coefficient constant, which makes a higher Q-factor and has reduced the phase noise of the VCO. The proposed VCO has the phase noise of $-121{\sim}-117.16\;dBc$/Hz at 100 kHz in the tuning range, $5.749{\sim}5.853\;GHz$. The figure of merit(FOM) of this VCO is $-198.45{\sim}-194.77\;dBc$/Hz at 100 Hz in the same tuning range, respectively.

• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• Journal of radiological science and technology
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• v.44 no.2
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• pp.101-107
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• 2021

The purpose of this study was to evaluate optimal CT scan parameters to minimize patient dose to the irradiation and maintain satisfactory image quality in low-dose chest computed tomography (CT) scans. In a chest anthropomorphic phantom, chest CT scans were performed at different kVp and mA within reference of 3.4mGy in volume CT Dose Index (CTDI_vol). The following quantitative parameters had been statistically evaluated: image noise, signal-to-noise ratio (SNR), contrast-to-noise ratio (CNR), and figure of merit (FOM). Nine radiographers conducted the blind test to select the optimal kVp-mA combination. Results indicated that the kVp-mA combination of 80kVp-90mA, 100kVp-50mA, 120kVp-30mA and 140kVp-30mA were obtained high SNR and CNR. The 120kVp-30mA combination offered good compromise in the FOM, which showed the quality and dose performance. In the blind test, an image of 80kVp-90mA obtained a high score with 4.7 points, and 120kVp-10mA or 140kVp-10mA with a low tube current were observed severe noise and poor image quality, thus resulting in decreased diagnostic accuracy. On the other hand, in the combination of high kVp and high mA(140kVp-90mA), the image quality was improved, but the radiation dose was also increased. the FOM value of 140kVp-90mA was lower than 120kVp-30mA. The application of appropriate scan parameters in low-dose chest CT scans produced satisfactory results in dose and image quality for the accuracy of the clinical diagnosis.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.