• 조명전기설비학회논문지
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• 제20권9호
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• pp.40-44
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• 2006

This study investigated a new tuneable bandpass filter based on coplanar waveguide coupled line structure, and using the varactor diode for tuning the center frequency of the filter. The filter was designed by a commercial simulator and had a tuning range of 180[MHz] from 0.95[GHz] to 1.13[GHz]. The filter acceptable values regarding the insertion loss was less than 3[dB] and its return loss greater than 12[dB]. The figure of merit of the implemented tuneable filter increased with the reverse bias voltage up to 14[V] on the varactor diode. The proposed filter has a promising future as it can be used in integration processes and in various materials as substrate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.21-23
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• 2002

We designed and manufactured helical magnetic flux compression generator, in which, the current density was reduced by increasing the number of wires by stages, and the voltage between wires was reduced by decreasing the time rate of inductance change. The figure of merit and the energy multiplication ratio of the generator were measured as a function of current density flowing through coil and their characteristics were analyzed. When the current density of coil was more than 250 kA/cm, the figure of merit and the energy multiplication ratio were decreased rapidly.

• 한국전자파학회논문지
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• 제14권6호
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• pp.543-549
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• 2003

OFDM 시스템뿐만 아니라 통신 시스템에서는 HPA(High Power Amplifier)의 비선형 특성을 고려하는 것이 중요하다. 본 논문에서는 OFDM통신 시스템에서 전력 효율과 대역효율을 동시에 고려한 새로운 성능 평가지수(D)를 분석한다. IBO(Input Backoff)의 크기와 부반송파 수에 따라 다른 값을 갖는 비선형 왜곡 잡음 성분(Nd)을 고려하며, 대역폭의 변화에 따른 대역 효율을 사용하여 성능 지수를 구함으로써 IBO에 대해 서로 상반관계 (tradeoff)에 있는 전력 효율과 대역 효율의 특성을 분석하였다.

• 대한전자공학회논문지TC
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• 제47권11호
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• pp.43-48
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• 2010

유전체 직각 릿지 표면 플라즈몬 도파로의 주요 파라미터인 모드 유효굴절률과 도파길이를 해석하였다. 여러 금속 및 유전체를 릿지의 폭과 두께를 변화시키며 유한요소법을 이용하여 계산하였다. 상반되는 두 파라미터를 포함하는 메트릭으로 2차원 figure of merit을 사용하였다. 계산결과를 이용하면 광통신 파장대역에서 파장이하로 모여 낮은 전파손실을 가진 도파로의 여러 파라미터 및 크기를 설계할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.353-356
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• 2004

This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of $5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 A
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• pp.67-70
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• 2003

In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.175-180
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• 2008

Thermoelectric materials convert temperature difference to electric power for power generation and vice versa for refrigeration. Recent advances in enhancing the thermoelectric figure-of-merit shed light on efficient power generation from the waste heat available in industries and vehicles. Nanoscale phenomena with both nanoscale constituent-embedded bulk samples and nanoscale materials proving enhanced thermoelectric performance have been widely reviewed. Bulk materials of crystal-orientation and nano-structured particle embedding seem to promise a higher thermoelectric figure-of-merit and an effective power generation application. As a preliminary study, Si-Ge nanocomposite was prepared with spark plasma sintering method and its properties were examined.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 춘계연구발표회 논문개요집
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• pp.18-19
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• 1997

• 열처리공학회지
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• 제27권5호
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.